Publications

Found 2098 results
Author Title Type [ Year(Desc)]
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2000
York, B., A. Nagra, and J. Speck, "Thin-film ferroelectrics: Deposition methods and applications", International Microwave Symposium in Boston, MA, vol. 37, 2000.
York, R. A., A. S. Nagra, T. Taylor, and J. S. Speck, "Thin-film phase shifters for low-cost phased arrays", Workshop on Affordability and Cost Reduction for Radar Systems, Huntsville, Alabama: Citeseer, pp. 10, 2000.
Munkholm, A., C. Thompson, GB. Stephenson, JA. Eastman, O. Auciello, P. Fini, JS. Speck, and SP. DenBaars, Transition between the 1 x 1 and (${$radical$}$ 3 x 2 ${$radical$}$ 3) R30 ${$degree$}$ surface structures of GaN in the vapor-phase environment: Argonne National Laboratory, Argonne, IL (US), 2000.
Munkholm, A., C. Thompson, GB. Stephenson, JA. Eastman, O. Auciello, P. Fini, JS. Speck, and SP. DenBaars, Transition between the 1 x 1 and (${$radical$}$ 3 x 2 ${$radical$}$ 3) R30 ${$degree$}$ surface structures of GaN in the vapor-phase environment: Argonne National Laboratory, Argonne, IL (US), 2000.
Munkholm, A., C. Thompson, GB. Stephenson, JA. Eastman, O. Auciello, P. Fini, JS. Speck, and SP. DenBaars, "Transition between the 1$\times$ 1 and (3$\times$ 23) R30∞ surface structures of GaN in the vapor-phase environment", Physica B: Condensed Matter, vol. 283, no. 1-3: North-Holland, pp. 217–222, 2000.
Munkholm, A., C. Thompson, GB. Stephenson, JA. Eastman, O. Auciello, P. Fini, JS. Speck, and SP. DenBaars, "Transition between the 1$\times$ 1 and (3$\times$ 23) R30∞ surface structures of GaN in the vapor-phase environment", Physica B: Condensed Matter, vol. 283, no. 1-3: North-Holland, pp. 217–222, 2000.
Zhao, L., JS. Speck, R. Rajavel, J. Jensen, D. Leonard, T. Strand, and W. Hamilton, "Transmission electron microscopy studies of defects in HgCdTe device structures grown by molecular beam epitaxy", Journal of Electronic Materials, vol. 29, no. 6: Springer-Verlag, pp. 732–735, 2000.
Zhao, L., JS. Speck, R. Rajavel, J. Jensen, D. Leonard, T. Strand, and W. Hamilton, "Transmission electron microscopy studies of defects in HgCdTe device structures grown by molecular beam epitaxy", Journal of Electronic Materials, vol. 29, no. 6: Springer-Verlag, pp. 732–735, 2000.
Smorchkova, IP., S. Keller, S. Heikman, CR. Elsass, B. Heying, P. Fini, JS. Speck, and UK. Mishra, "Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers", Applied Physics Letters, vol. 77, no. 24: AIP, pp. 3998–4000, 2000.
Smorchkova, IP., S. Keller, S. Heikman, CR. Elsass, B. Heying, P. Fini, JS. Speck, and UK. Mishra, "Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers", Applied Physics Letters, vol. 77, no. 24: AIP, pp. 3998–4000, 2000.
2001
Smorchkova, IP., L. Chen, T. Mates, L. Shen, S. Heikman, B. Moran, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "AlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy", Journal of Applied Physics, vol. 90, no. 10: AIP, pp. 5196–5201, 2001.
Smorchkova, IP., L. Chen, T. Mates, L. Shen, S. Heikman, B. Moran, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "AlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy", Journal of Applied Physics, vol. 90, no. 10: AIP, pp. 5196–5201, 2001.
Smorchkova, IP., L. Chen, T. Mates, L. Shen, S. Heikman, B. Moran, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "AlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy", Journal of Applied Physics, vol. 90, no. 10: AIP, pp. 5196–5201, 2001.
Ding, Y., H-J. Im, JP. Pelz, B. Heying, and JS. Speck, "Ballistic Electron Emission Microscopy Study of Individual Threading Dislocations in GaN", APS Meeting Abstracts, 2001.
Hierro, A., AR. Arehart, B. Heying, M. Hansen, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Capture Kinetics of Electron Traps in MBE-Grown n-GaN", physica status solidi (b), vol. 228, no. 1: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 309–313, 2001.
Hierro, A., M. Hansen, L. Zhao, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Carrier Trapping and Recombination at Point Defects and Dislocations in MOCVD n-GaN", physica status solidi (b), vol. 228, no. 3: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 937–946, 2001.
Link, A., O. Ambacher, IP. Smorchkova, UK. Mishra, JS. Speck, and M. Stutzmann, "Chapter 6: III-Nitrides and Related Materials-6.1 Growth and Physical Properties-Formation and Electronic Transport of 2D Electron and Hole Gases in AlGaN/GaN Heterostructures", Materials Science Forum, vol. 353: Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, pp. 787–790, 2001.
Link, A., O. Ambacher, IP. Smorchkova, UK. Mishra, JS. Speck, and M. Stutzmann, "Chapter 6: III-Nitrides and Related Materials-6.1 Growth and Physical Properties-Formation and Electronic Transport of 2D Electron and Hole Gases in AlGaN/GaN Heterostructures", Materials Science Forum, vol. 353: Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, pp. 787–790, 2001.
Link, A., O. Ambacher, IP. Smorchkova, UK. Mishra, JS. Speck, and M. Stutzmann, "Chapter 6: III-Nitrides and Related Materials-6.1 Growth and Physical Properties-Formation and Electronic Transport of 2D Electron and Hole Gases in AlGaN/GaN Heterostructures", Materials Science Forum, vol. 353: Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, pp. 787–790, 2001.
Im, H-J., Y. Ding, JP. Pelz, B. Heying, and JS. Speck, "Characterization of individual threading dislocations in GaN using ballistic electron emission microscopy", Physical review letters, vol. 87, no. 10: APS, pp. 106802, 2001.
Im, HJ., Y. Ding, JP. Pelz, B. Heying, and JS. Speck, "Condensed Matter: Electronic Properties, etc.-Characterization of Individual Threading Dislocations in GaN Using Ballistic Electron Emission Microscopy", Physical Review Letters, vol. 87, no. 10: [Woodbury, NY, etc.] American Physical Society., pp. 106802–106802, 2001.
A Andrews, M., JS. Speck, AE. Romanov, M. Bobeth, and W. Pompe, "Development of cross-hatch morphology during growth of lattice mismatched layers", MRS Online Proceedings Library Archive, vol. 673: Cambridge University Press, 2001.
Liu, Y., B. Acikeia, A. S. Nagra, T. R. Taylor, P. J. Hansen, J. S. Speck, and R. A. York, "Distributed phase shifters using (Ba, Sr) TiO3 thin films on sapphire and glass substrates", Integrated Ferroelectrics, vol. 39, no. 1-4: Taylor & Francis, pp. 313–320, 2001.
McCarthy, L., I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, SP. DenBaars, MJW. Rodwell, and UK. Mishra, "Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors", Applied Physics Letters, vol. 78, no. 15: AIP, pp. 2235–2237, 2001.
McCarthy, L., I. Smorchkova, H. Xing, P. Fini, S. Keller, J. Speck, SP. DenBaars, MJW. Rodwell, and UK. Mishra, "Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors", Applied Physics Letters, vol. 78, no. 15: AIP, pp. 2235–2237, 2001.

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