Publications

Found 384 results
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2007
Pei, Y., C. Suh, R. Chu, F. Recht, L. Shen, A. Corrion, C. Poblenz, J. Speck, and UK. Mishra, "AlGaN/GaNHEMT with High PAE and Breakdown Voltage Grown by Ammonia MBE", Device Research Conference, 2007 65th Annual: IEEE, pp. 129–130, 2007.
Darakchieva, V., T. Paskova, M. Schubert, H. Arwin, PP. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, et al., "Anisotropic strain and phonon deformation potentials in GaN", Physical Review B, vol. 75, no. 19: APS, pp. 195217, 2007.
Darakchieva, V., T. Paskova, M. Schubert, H. Arwin, PP. Paskov, B. Monemar, D. Hommel, M. Heuken, J. Off, F. Scholz, et al., "Anisotropic strain and phonon deformation potentials in GaN", Physical Review B, vol. 75, no. 19: APS, pp. 195217, 2007.
Fehlberg, T. B., G. A. Umana-Membreno, C. S. Gallinat, G. Koblmüller, S. Bernardis, B. D. Nener, G. Parish, and J. S. Speck, "Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy", physica status solidi (c), vol. 4, no. 7: Wiley Online Library, pp. 2423–2427, 2007.
Armstrong, A., C. Poblenz, UK. Mishra, JS. Speck, and SA. Ringel, "Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy", physica status solidi (b), vol. 244, no. 6: Wiley Online Library, pp. 1867–1871, 2007.
Armstrong, A., A. Corrion, C. Poblenz, UK. Mishra, JS. Speck, and SA. Ringel, "Comparison of deep level spectra in p-type and n-type GaN grown by molecular beam epitaxy [phys. stat. sol.(b) 244, No. 6, 1867–1871 (2007)]", physica status solidi (b), vol. 244, no. 12: Wiley Online Library, pp. 4692–4692, 2007.
Shen, L., Y. Pei, L. McCarthy, C. Poblenz, A. Corrion, N. Fichtenbaum, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation", Microwave Symposium, 2007. IEEE/MTT-S International: IEEE, pp. 623–626, 2007.
Shen, L., Y. Pei, L. McCarthy, C. Poblenz, A. Corrion, N. Fichtenbaum, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Deep-recessed GaN HEMTs using selective etch technology exhibiting high microwave performance without surface passivation", Microwave Symposium, 2007. IEEE/MTT-S International: IEEE, pp. 623–626, 2007.
Darakchieva, V., T. Paskova, M. Schubert, PP. Paskov, H. Arwin, B. Monemar, D. Hommel, M. Heuken, J. Off, BA. Haskell, et al., "Edgar, JH, see Lu, P. 300 (2007) 336 Edwards, PR, see Rizzi, F. 300 (2007) 254 Egawa, S., see Honda, T. 300 (2007) 90 El Jani, B., see Fitouri, H. 300 (2007) 347 Epelbaum, BM, see Bickermann, M. 300 (2007) 299", Journal of Crystal Growth, vol. 300, pp. 555–561, 2007.
Darakchieva, V., T. Paskova, M. Schubert, PP. Paskov, H. Arwin, B. Monemar, D. Hommel, M. Heuken, J. Off, BA. Haskell, et al., "Edgar, JH, see Lu, P. 300 (2007) 336 Edwards, PR, see Rizzi, F. 300 (2007) 254 Egawa, S., see Honda, T. 300 (2007) 90 El Jani, B., see Fitouri, H. 300 (2007) 347 Epelbaum, BM, see Bickermann, M. 300 (2007) 299", Journal of Crystal Growth, vol. 300, pp. 555–561, 2007.
Darakchieva, V., T. Paskova, M. Schubert, PP. Paskov, H. Arwin, B. Monemar, D. Hommel, M. Heuken, J. Off, BA. Haskell, et al., "Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers", Journal of crystal growth, vol. 300, no. 1: Elsevier, pp. 233–238, 2007.
Darakchieva, V., T. Paskova, M. Schubert, PP. Paskov, H. Arwin, B. Monemar, D. Hommel, M. Heuken, J. Off, BA. Haskell, et al., "Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers", Journal of crystal growth, vol. 300, no. 1: Elsevier, pp. 233–238, 2007.
Wong, M. Hoi, Y. Pei, T. Palacios, L. Shen, A. Chakraborty, L. S. McCarthy, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth", Applied Physics Letters, vol. 91, no. 23: AIP, pp. 232103, 2007.
Wong, M. Hoi, Y. Pei, T. Palacios, L. Shen, A. Chakraborty, L. S. McCarthy, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth", Applied Physics Letters, vol. 91, no. 23: AIP, pp. 232103, 2007.
Kröger, R., T. Paskova, A. Rosenauer, D. Hommel, B. Monemar, P. Fini, B. Haskell, J. Speck, and S. Nakamura, "On the Mechanism of Dislocation and Stacking Fault Formation in a-plane GaN Films Grown by Hydride Vapor Phase Epitaxy", AIP Conference Proceedings, vol. 893, no. 1: AIP, pp. 341–342, 2007.
Wong, M. Hoi, S. Rajan, RM. Chu, T. Palacios, C-S. Suh, L. S. McCarthy, S. Keller, J. S. Speck, and U. K. Mishra, "N-face high electron mobility transistors with a GaN-spacer", physica status solidi (a), vol. 204, no. 6: Wiley Online Library, pp. 2049–2053, 2007.
Poblenz, C., A. L. Corrion, F. Recht, C. Soo Suh, R. Chu, L. Shen, J. S. Speck, and U. K. Mishra, "Power performance of AlGaN/GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz", IEEE Electron Device Letters, vol. 28, no. 11: IEEE, pp. 945–947, 2007.
Chu, R., L. Shen, N. Fichtenbaum, S. Keller, A. Corrion, C. Poblenz, J. Speck, and U. Mishra, "Surface treatment for leakage reduction in AlGaN/GaN HEMTs", Device Research Conference, 2007 65th Annual: IEEE, pp. 127–128, 2007.
2006
Moe, C. G., Y. Wu, J. Piprek, S. Keller, J. S. Speck, S. P. DenBaars, and D. Emerson, "AlGaN/AlN distributed bragg reflectors for deep ultraviolet wavelengths", physica status solidi (a), vol. 203, no. 8: Wiley Online Library, pp. 1915–1919, 2006.
Fehlberg, T. B., G. A. Umana-Membreno, B. D. Nener, G. Parish, C. S. Gallinat, G. Koblmüller, S. Bernardis, and J. S. Speck, "Characterisation of Electron Transport in MBE Grown Indium Nitride", Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on: IEEE, pp. 11–14, 2006.
Fehlberg, T. B., G. A. Umana-Membreno, B. D. Nener, G. Parish, C. S. Gallinat, G. Koblmüller, S. Rajan, S. Bernardis, and J. S. Speck, "Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy", Japanese journal of applied physics, vol. 45, no. 10L: IOP Publishing, pp. L1090, 2006.
Yamanaka, T., D. Alexson, M. A. Stroscio, M. Dutta, J. Brown, P. Petroff, and J. Speck, "GaN quantum dots: Nanophotonics and nanophononics", Quantum Sensing and Nanophotonic Devices III, vol. 6127: International Society for Optics and Photonics, pp. 61270I, 2006.
Corrion, A., F. Wu, T. Mates, CS. Gallinat, C. Poblenz, and JS. Speck, "Growth of Fe-doped GaN by RF plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 289, no. 2: Elsevier, pp. 587–595, 2006.
Armstrong, A., C. Poblenz, DS. Green, UK. Mishra, JS. Speck, and SA. Ringel, "Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy", Applied physics letters, vol. 88, no. 8: AIP, pp. 082114, 2006.
Shen, L., L. McCarthy, T. Palacios, MH. Wong, C. Poblenz, A. Corrion, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation", Device Research Conference, 2006 64th: IEEE, pp. 101–102, 2006.

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