Publications

Found 645 results
Author Title Type [ Year(Desc)]
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2015
Zhong, H., A. Tyagi, K. J. Vampola, J. S. Speck, S. P. DenBaars, and S. Nakamura, High light extraction efficiency nitride based light emitting diode by surface roughening, 2015.
Gelžinyt\.e, K., R. Ivanov, S. Marcinkevičius, Y. Zhao, DL. Becerra, S. Nakamura, SP. DenBaars, and JS. Speck, "High spatial uniformity of photoluminescence spectra in semipolar (20 2 1) plane InGaN/GaN quantum wells", Journal of Applied Physics, vol. 117, no. 2: AIP Publishing, pp. 023111, 2015.
Pourhashemi, A., RM. Farrell, DA. Cohen, JS. Speck, SP. DenBaars, and S. Nakamura, "High-power blue laser diodes with indium tin oxide cladding on semipolar (20 2 1) GaN substrates", Applied Physics Letters, vol. 106, no. 11: AIP Publishing, pp. 111105, 2015.
Ivanov, R., S. Marcinkevičius, Y. Zhao, DL. Becerra, S. Nakamura, SP. DenBaars, and JS. Speck, "Impact of carrier localization on radiative recombination times in semipolar (20 2\= 1) plane InGaN/GaN quantum wells", Applied Physics Letters, vol. 107, no. 21: AIP Publishing, pp. 211109, 2015.
Keller, S., C. Lund, T. Whyland, Y. Hu, C. Neufeld, S. Chan, S. Wienecke, F. Wu, S. Nakamura, J. S. Speck, et al., "InGaN lattice constant engineering via growth on (In, Ga) N/GaN nanostripe arrays", Semiconductor Science and Technology, vol. 30, no. 10: IOP Publishing, pp. 105020, 2015.
Keller, S., C. Lund, T. Whyland, Y. Hu, C. Neufeld, S. Chan, S. Wienecke, F. Wu, S. Nakamura, J. S. Speck, et al., "InGaN lattice constant engineering via growth on (In, Ga) N/GaN nanostripe arrays", Semiconductor Science and Technology, vol. 30, no. 10: IOP Publishing, pp. 105020, 2015.
Nedy, J. G., N. G. Young, K. M. Kelchner, Y. Hu, R. M. Farrell, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Low damage dry etch for III-nitride light emitters", Semiconductor Science and Technology, vol. 30, no. 8: IOP Publishing, pp. 085019, 2015.
Nedy, J. G., N. G. Young, K. M. Kelchner, Y. Hu, R. M. Farrell, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Low damage dry etch for III-nitride light emitters", Semiconductor Science and Technology, vol. 30, no. 8: IOP Publishing, pp. 085019, 2015.
Shen, C., J. Leonard, A. Pourhashemi, H. Oubei, M. Sharizal Alias, T. Khee Ng, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, et al., "Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate", Photonics Conference (IPC), 2015: IEEE, pp. 581–582, 2015.
Shen, C., J. Leonard, A. Pourhashemi, H. Oubei, M. Sharizal Alias, T. Khee Ng, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, et al., "Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate", Photonics Conference (IPC), 2015: IEEE, pp. 581–582, 2015.
Piccardo, M., J. Iveland, L. Martinelli, S. Nakamura, J. Won Choi, J. S. Speck, C. Weisbuch, and J. Peretti, "Low-energy electro-and photo-emission spectroscopy of GaN materials and devices", Journal of Applied Physics, vol. 117, no. 11: AIP Publishing, pp. 112814, 2015.
Kuritzky, L., D. Myers, K. Kelchner, S. Nakamura, S. DenBaars, C. Weisbuch, and J. Speck, "$ m $-Plane GaN Growth on``Double Miscut''Bulk Substrates for Blue Laser Diode Applications", Bulletin of the American Physical Society, vol. 60: APS, 2015.
DenBaars, S. P., M. C. Schmidt, K. Choong Kim, J. S. Speck, and S. Nakamura, Non-polar and semi-polar light emitting devices, 2015.
Leonard, JT., DA. Cohen, BP. Yonkee, RM. Farrell, T. Margalith, S. Lee, SP. DenBaars, JS. Speck, and S. Nakamura, "Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture", Applied Physics Letters, vol. 107, no. 1: AIP Publishing, pp. 011102, 2015.
Marcinkevičius, S., A. Sztein, S. Nakamura, and J. S. Speck, "Properties of sub-band edge states in AlInN studied by time-resolved photoluminescence of a AlInN/GaN heterostructure", Semiconductor Science and Technology, vol. 30, no. 11: IOP Publishing, pp. 115017, 2015.
Megalini, L., L. Y. Kuritzky, J. T. Leonard, R. Shenoy, K. Rose, S. Nakamura, J. S. Speck, D. A. Cohen, and S. P. DenBaars, "Selective and controllable lateral photoelectrochemical etching of nonpolar and semipolar InGaN/GaN multiple quantum well active regions", Applied Physics Express, vol. 8, no. 6: IOP Publishing, pp. 066502, 2015.
Hsu, P. Shan, K. M. Kelchner, R. M. Farrell, D. A. Haeger, H. Ohta, A. Tyagi, S. Nakamura, S. P. DenBaars, and J. S. Speck, Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than+/-15 degrees in the c-direction, 2015.
Ohta, H., F. Wu, A. Tyagi, A. Chakraborty, J. S. Speck, S. P. DenBaars, S. Nakamura, and E. C. Young, Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface, 2015.
Leonard, JT., DA. Cohen, BP. Yonkee, RM. Farrell, SP. DenBaars, JS. Speck, and S. Nakamura, "Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts", Journal of Applied Physics, vol. 118, no. 14: AIP Publishing, pp. 145304, 2015.
Marcinkevičius, S., K. Gelžinyt\.e, R. Ivanov, Y. Zhao, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Spatial variations of optical properties of semipolar InGaN quantum wells", Gallium Nitride Materials and Devices X, vol. 9363: International Society for Optics and Photonics, pp. 93631U, 2015.
Kelchner, KM., LY. Kuritzky, S. Nakamura, SP. DenBaars, and JS. Speck, "Stable vicinal step orientations in m-plane GaN", Journal of Crystal Growth, vol. 411: Elsevier, pp. 56–62, 2015.
Holder, C. O., D. F. Feezell, S. P. DenBaars, J. S. Speck, and S. Nakamura, Structure and method for the fabrication of a gallium nitride vertical cavity surface emitting laser, sep # " 15", 2015.
Xue, J., Y. Zhao, S-H. Oh, W. F. Herrington, J. S. Speck, S. P. DenBaars, S. Nakamura, and R. J. Ram, "Thermally enhanced blue light-emitting diode", Applied Physics Letters, vol. 107, no. 12: AIP Publishing, pp. 121109, 2015.
Young, E. C., B. P. Yonkee, F. Wu, B. K. Saifaddin, D. A. Cohen, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic () AlGaN/GaN buffer layers", Journal of Crystal Growth, vol. 425: North-Holland, pp. 389–392, 2015.
Young, E. C., B. P. Yonkee, F. Wu, B. K. Saifaddin, D. A. Cohen, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Ultraviolet light emitting diodes by ammonia molecular beam epitaxy on metamorphic (202¯ 1) AlGaN/GaN buffer layers", Journal of Crystal Growth: Elsevier BV, 2015.

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