Publications

Found 645 results
Author Title Type [ Year(Desc)]
Filters: First Letter Of Last Name is N  [Clear All Filters]
2014
Marcinkevičius, S., K. M. Kelchner, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Optical properties and carrier dynamics in m-plane InGaN quantum wells", physica status solidi (c), vol. 11, no. 3-4: Wiley Online Library, pp. 690–693, 2014.
Feneberg, M., C. Lidig, K. Lange, R. Goldhahn, M. D. Neumann, N. Esser, O. Bierwagen, M. E. White, M. Y. Tsai, and J. S. Speck, "Ordinary and extraordinary dielectric functions of rutile SnO2 up to 20 eV", Applied Physics Letters, vol. 104, no. 23: AIP, pp. 231106, 2014.
Iveland, J., M. Piccardo, L. Martinelli, J. Peretti, J. Won Choi, N. Young, S. Nakamura, J. S. Speck, and C. Weisbuch, "Origin of electrons emitted into vacuum from InGaN light emitting diodes", Applied Physics Letters, vol. 105, no. 5: AIP Publishing, pp. 052103, 2014.
Chung-Ta, HSU., C-Y. Huang, Y. Zhao, S-C. Haung, D. F. Feezell, S. P. DenBaars, S. Nakamura, and J. S. Speck, Pec etching of (20-2-1) semipolar gallium nitride for external efficiency enhancement in light emitting diode applications, 2014.
Hirai, A., Z. Jia, M. Saito, H. Yamada, K. Iso, S. P. DenBaars, S. Nakamura, and J. S. Speck, Planar nonpolar group-III nitride films grown on miscut substrates, 2014.
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Reactor designs for use in ammonothermal growth of group-III nitride crystals, feb # " 4", 2014.
Pimputkar, S., D. Shane Kamber, J. S. Speck, and S. Nakamura, Reactor designs for use in ammonothermal growth of group-iii nitride crystals, 2014.
Wu, F., Y. Zhao, A. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Stacking faults and interface roughening in semipolar (20 2\= 1\=) single InGaN quantum wells for long wavelength emission", Applied Physics Letters, vol. 104, no. 15: AIP, pp. 151901, 2014.
Hardy, M. T., P. Shan Hsu, S. P. DenBaars, J. S. Speck, and S. Nakamura, Suppression of inclined defect formation and increase in critical thickness by silicon doping on non-c-plane (Al, Ga, In) N, 2014.
Jr, R. M. Farrell, T. J. Baker, A. Chakraborty, B. A. Haskell, M. P Pattison, R. Sharma, U. K. Mishra, S. P. DenBaars, J. S. Speck, S. Nakamura, et al., Technique for the growth and fabrication of semipolar (Ga, Al, In, B) N thin films, heterostructures, and devices, 2014.
2015
Lee, C., C. Shen, H. M. Oubei, M. Cantore, B. Janjua, T. Khee Ng, R. M. Farrell, M. M. El-Desouki, J. S. Speck, S. Nakamura, et al., "2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system", Optics express, vol. 23, no. 23: Optical Society of America, pp. 29779–29787, 2015.
Lee, C., C. Shen, H. M. Oubei, M. Cantore, B. Janjua, T. Khee Ng, R. M. Farrell, M. M. El-Desouki, J. S. Speck, S. Nakamura, et al., "2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system", Optics express, vol. 23, no. 23: Optical Society of America, pp. 29779–29787, 2015.
Lee, C., C. Zhang, M. Cantore, R. Farrell, S. Ho Oh, T. Margalith, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, "2.6 GHz high-speed visible light communication of 450 nm GaN laser diode by direct modulation", Summer Topicals Meeting Series (SUM), 2015: IEEE, pp. 228–229, 2015.
Lee, C., C. Zhang, M. Cantore, R. M. Farrell, S. Ho Oh, T. Margalith, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, "4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication", Optics express, vol. 23, no. 12: Optical Society of America, pp. 16232–16237, 2015.
Iza, M., J. S. Speck, S. Nakamura, and S. P. DenBaars, (Al, In, Ga, B) N DEVICE STRUCTURES ON A PATTERNED SUBSTRATE, 2015.
Feezell, D. F., M. C. Schmidt, K-C. Kim, R. M. Farrell, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes, may # " 26", 2015.
Pimputkar, S., J. S. Speck, S. Nakamura, and S-ichiro. Kawabata, Ammonothermal growth of group-III nitride crystals on seeds with at least two surfaces making an acute, right or obtuse angle with each other, 2015.
Megalini, L., D. L. Becerra, R. M. Farrell, A. Pourhashemi, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. A. Cohen, "Continuous-wave operation of a InGaN laser diode with a photoelectrochemically etched current aperture", Applied Physics Express, vol. 8, no. 4: IOP Publishing, pp. 042701, 2015.
Nguyen, X. Sang, K. Lin, Z. Zhang, B. McSkimming, AR. Arehart, JS. Speck, SA. Ringel, E. A. Fitzgerald, and SJ. Chua, "Correlation of a generation-recombination center with a deep level trap in GaN", Applied Physics Letters, vol. 106, no. 10: AIP Publishing, pp. 102101, 2015.
Leonard, JT., EC. Young, BP. Yonkee, DA. Cohen, T. Margalith, SP. DenBaars, JS. Speck, and S. Nakamura, "Demonstration of a III-nitride vertical-cavity surface-emitting laser with a III-nitride tunnel junction intracavity contact", Applied Physics Letters, vol. 107, no. 9: AIP Publishing, pp. 091105, 2015.
Yonkee, B. P., R. M. Farrell, J. T. Leonard, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Demonstration of low resistance ohmic contacts to p-type (202Ø1Ø) GaN", Semiconductor Science and Technology, vol. 30, no. 7: IOP Publishing, pp. 075007, 2015.
Kowsz, SJ., CD. Pynn, SH. Oh, RM. Farrell, JS. Speck, SP. DenBaars, and S. Nakamura, "Demonstration of phosphor-free polarized white light emission from monolithically integrated semipolar InGaN quantum wells", Applied Physics Letters, vol. 107, no. 10: AIP Publishing, pp. 101104, 2015.
Kuritzky, L. Y., D. J. Myers, J. Nedy, K. M. Kelchner, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN ìdouble miscutî substrates", Applied Physics Express, vol. 8, no. 6: IOP Publishing, pp. 061002, 2015.
Kuritzky, L. Y., D. J. Myers, J. Nedy, K. M. Kelchner, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Electroluminescence characteristics of blue InGaN quantum wells on m-plane GaN ìdouble miscutî substrates", Applied Physics Express, vol. 8, no. 6: IOP Publishing, pp. 061002, 2015.
Pimputkar, S., S. Suihkonen, M. Imade, Y. Mori, JS. Speck, and S. Nakamura, "Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals", Journal of Crystal Growth, vol. 432: Elsevier, pp. 49–53, 2015.

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