Publications
Found 909 results
Author Title Type [ Year
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"Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition", Applied physics letters, vol. 73, no. 6: AIP, pp. 747–749, 1998.
, "MOCVD growth and properties of InGaN/GaN multi-quantum wells", Materials Science Forum, vol. 264: Trans Tech Publications, pp. 1157–1160, 1998.
, "MOCVD growth and properties of InGaN/GaN multi-quantum wells", Materials Science Forum, vol. 264: Trans Tech Publications, pp. 1157–1160, 1998.
, "MOCVD growth and properties of InGaN/GaN multi-quantum wells", Materials Science Forum, vol. 264: Trans Tech Publications, pp. 1157–1160, 1998.
, "Observation of near field modal emission in InGaN multi-quantum well laser diodes by near field scanning optical microscopy", Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International: IEEE, pp. 9–10, 1998.
, "Pulsed operation of (Al, Ga, In) N blue laser diodes", In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, vol. 3284: International Society for Optics and Photonics, pp. 103–113, 1998.
, "Pulsed operation of (Al, Ga, In) N blue laser diodes", In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, vol. 3284: International Society for Optics and Photonics, pp. 103–113, 1998.
, "Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition", Applied physics letters, vol. 72, no. 18: AIP, pp. 2247–2249, 1998.
, "Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells", Applied Physics Letters, vol. 72, no. 6: AIP, pp. 692–694, 1998.
, "InzAl1- zAs/InyGa1- yAs lattice constant engineered HEMTs on GaAs", Solid-State Electronics, vol. 41, no. 10: Pergamon, pp. 1629–1634, 1997.
, "MOCVD Growth of Group-III Nitrides for High Quality Photonic Devices", OPTOELECTRONICS & COMMUNICATIONS CONFERENCE, vol. 2, pp. 48–49, 1997.
, "MOCVD Growth of Group-III Nitrides for High Quality Photonic Devices", OPTOELECTRONICS & COMMUNICATIONS CONFERENCE, vol. 2, pp. 48–49, 1997.
, "Oxide based compound semiconductor electronics", Electron Devices Meeting, 1997. IEDM'97. Technical Digest., International: IEEE, pp. 545–548, 1997.
, "Structural and electrical properties of low-temperature-grown Al (As, Sb)", Applied physics letters, vol. 71, no. 24: AIP, pp. 3534–3536, 1997.
, "Critical transitions in the biofabrication of abalone shells and flat pearls", Chemistry of Materials, vol. 8, no. 3: American Chemical Society, pp. 679–690, 1996.
, "Critical transitions in the biofabrication of abalone shells and flat pearls", Chemistry of Materials, vol. 8, no. 3: American Chemical Society, pp. 679–690, 1996.
, "Crystallization behavior of Li 1–5x Ta 1+ x O 3 glasses synthesized from liquid precursors", Journal of materials research, vol. 11, no. 9: Cambridge University Press, pp. 2376–2387, 1996.
, "Effect of the trimethylgallium flow during nucleation layer growth on the properties of GaN grown on sapphire", Japanese journal of applied physics, vol. 35, no. 3A: IOP Publishing, pp. L285, 1996.
, "iJMR Abstracts", MRS BULLETIN: Cambridge Univ Press, 1996.
, "Improvement in low energy ion-induced damage with a low temperature GaAs capping layer", Applied physics letters, vol. 69, no. 12: AIP, pp. 1728–1730, 1996.
, "Influence of sapphire nitridation on properties of gallium nitride grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 68, no. 11: AIP, pp. 1525–1527, 1996.
, "Morphological and structural transitions in GaN films grown on sapphire by metal-organic chemical vapor deposition", Japanese journal of applied physics, vol. 35, no. 12B: IOP Publishing, pp. L1648, 1996.
, "Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN", Applied physics letters, vol. 68, no. 10: AIP, pp. 1371–1373, 1996.
, "Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN", Journal of electronic materials, vol. 24, no. 11: Springer-Verlag, pp. 1707–1709, 1995.
, "Metalorganic chemical vapor deposition growth of high optical quality and high mobility GaN", Journal of electronic materials, vol. 24, no. 11: Springer-Verlag, pp. 1707–1709, 1995.
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