Publications
Found 909 results
Author Title Type [ Year
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, "Erratum:ìAlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxyî[J. Appl. Phys. 90, 5196 (2001)]", Journal of Applied Physics, vol. 91, no. 7: AIP, pp. 4780–4780, 2002.
, "Erratum:ìAlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxyî[J. Appl. Phys. 90, 5196 (2001)]", Journal of Applied Physics, vol. 91, no. 7: AIP, pp. 4780–4780, 2002.
, "Erratum:ìAlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxyî[J. Appl. Phys. 90, 5196 (2001)]", Journal of Applied Physics, vol. 91, no. 7: AIP, pp. 4780–4780, 2002.
, "Extended abstracts of the... Conference on Solid State Devices and Materials 2005, 712-713, 2005-09-13", Appl. Phys. Lett, vol. 80, pp. 2198, 2002.
, "Extended abstracts of the... Conference on Solid State Devices and Materials 2005, 712-713, 2005-09-13", Appl. Phys. Lett, vol. 80, pp. 2198, 2002.
, "Heteroepitaxial Growth of GaN on 6H-SiC (0001) by Plasma-Assisted Molecular Beam Epitaxy", physica status solidi (a), vol. 194, no. 2: WILEY-VCH Verlag Berlin, pp. 524–527, 2002.
, "Impact of Ga/N flux ratio on trap states in n-GaN grown by plasma-assisted molecular-beam epitaxy", Applied physics letters, vol. 80, no. 5: AIP, pp. 805–807, 2002.
, "Impurity incorporation in InGaN grown by rf plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 81, no. 15: AIP, pp. 2767–2769, 2002.
, "Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG", physica status solidi (b), vol. 234, no. 3: WILEY-VCH Verlag Berlin, pp. 713–716, 2002.
, "Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys", Applied Physics Letters, vol. 81, no. 23: AIP, pp. 4395–4397, 2002.
, "Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope", Journal of applied physics, vol. 91, no. 12: AIP, pp. 9821–9826, 2002.
, "The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 246, no. 1-2: North-Holland, pp. 55–63, 2002.
, "The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 246, no. 1-2: North-Holland, pp. 55–63, 2002.
, "Self-assembling quantum dot lattices through nucleation site engineering", Journal of crystal growth, vol. 236, no. 4: North-Holland, pp. 647–654, 2002.
, "Small signal RF performance of AlGaN/GaN heterojunction bipolar transistors", Electronics Letters, vol. 38, no. 3: IET Digital Library, pp. 144–145, 2002.
, "Small signal RF performance of AlGaN/GaN heterojunction bipolar transistors", Electronics Letters, vol. 38, no. 3: IET Digital Library, pp. 144–145, 2002.
, "Transport properties of 2DEGs in AlGaN/GaN heterostructures: Spin splitting and occupation of higher subbands", physica status solidi (b), vol. 234, no. 3: WILEY-VCH Verlag Berlin, pp. 805–809, 2002.
, "AlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy", Journal of Applied Physics, vol. 90, no. 10: AIP, pp. 5196–5201, 2001.
, "AlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy", Journal of Applied Physics, vol. 90, no. 10: AIP, pp. 5196–5201, 2001.
, "AlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy", Journal of Applied Physics, vol. 90, no. 10: AIP, pp. 5196–5201, 2001.
, "Capture Kinetics of Electron Traps in MBE-Grown n-GaN", physica status solidi (b), vol. 228, no. 1: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 309–313, 2001.
, "Carrier Trapping and Recombination at Point Defects and Dislocations in MOCVD n-GaN", physica status solidi (b), vol. 228, no. 3: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 937–946, 2001.
, "Chapter 6: III-Nitrides and Related Materials-6.1 Growth and Physical Properties-Formation and Electronic Transport of 2D Electron and Hole Gases in AlGaN/GaN Heterostructures", Materials Science Forum, vol. 353: Aedermannsdorf, Switzerland: Trans Tech Publications, 1984-, pp. 787–790, 2001.
, "Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors", Applied Physics Letters, vol. 78, no. 15: AIP, pp. 2235–2237, 2001.
, "Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors", Applied Physics Letters, vol. 78, no. 15: AIP, pp. 2235–2237, 2001.