Publications

Found 909 results
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2010
Matioli, E., B. Fleury, E. Rangel, T. Melo, E. Hu, J. Speck, and C. Weisbuch, "High extraction efficiency GaN-based photonic-crystal light-emitting diodes: Comparison of extraction lengths between surface and embedded photonic crystals", Applied physics express, vol. 3, no. 3: IOP Publishing, pp. 032103, 2010.
Matioli, E., B. Fleury, E. Rangel, T. Melo, E. Hu, J. Speck, and C. Weisbuch, "High extraction efficiency GaN-based photonic-crystal light-emitting diodes: Comparison of extraction lengths between surface and embedded photonic crystals", Applied physics express, vol. 3, no. 3: IOP Publishing, pp. 032103, 2010.
Matioli, E., E. Rangel, M. Iza, B. Fleury, N. Pfaff, J. Speck, E. Hu, and C. Weisbuch, "High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals", Applied physics letters, vol. 96, no. 3: AIP, pp. 031108, 2010.
Raring, J. W., M. C. Schmidt, C. Poblenz, Y-C. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, et al., "High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates", Applied physics express, vol. 3, no. 11: IOP Publishing, pp. 112101, 2010.
Speck, J., E. Hu, C. Weisbuch, Y-S. Choi, K. McGroddy, G. Koblmüller, E. Matioli, E. Rangel, F. Rol, and D. Simeonov, High-Efficiency Nitride-Base Photonic Crystal Light Sources: The Regents Of The University Of California, 2010.
Speck, J., E. Hu, C. Weisbuch, Y-S. Choi, K. McGroddy, G. Koblmüller, E. Matioli, E. Rangel, F. Rol, and D. Simeonov, High-Efficiency Nitride-Base Photonic Crystal Light Sources: The Regents Of The University Of California, 2010.
Koblmüller, G., RM. Chu, A. Raman, UK. Mishra, and JS. Speck, "High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels", Journal of Applied Physics, vol. 107, no. 4: AIP, pp. 043527, 2010.
Miller, N., JW. Ager III, HM. Smith III, MA. Mayer, KM. Yu, EE. Haller, W. Walukiewicz, WJ. Schaff, C. Gallinat, G. Koblmüller, et al., "Hole transport and photoluminescence in Mg-doped InN", Journal of Applied Physics, vol. 107, no. 11: AIP, pp. 113712, 2010.
Miller, N., JW. Ager III, HM. Smith III, MA. Mayer, KM. Yu, EE. Haller, W. Walukiewicz, WJ. Schaff, C. Gallinat, G. Koblmüller, et al., "Hole transport and photoluminescence in Mg-doped InN", Journal of Applied Physics, vol. 107, no. 11: AIP, pp. 113712, 2010.
Rangel, E., E. Matioli, H-T. Chen, Y-S. Choi, C. Weisbuch, J. S. Speck, and E. L. Hu, "Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes", Applied Physics Letters, vol. 97, no. 6: AIP, pp. 061118, 2010.
Rauch, C., F. Reurings, F. Tuomisto, TD. Veal, C. F. McConville, H. Lu, WJ. Schaff, CS. Gallinat, G. Koblmüller, JS. Speck, et al., "In-vacancies in Si-doped InN", physica status solidi (a), vol. 207, no. 5: WILEY-VCH Verlag, pp. 1083–1086, 2010.
Yang, CK., P. Roblin, F. De Groote, SA. Ringel, S. Rajan, JP. Teyssier, C. Poblenz, Y. Pei, J. Speck, and UK. Mishra, "Linear and Nonlinear Device Modeling-Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer", IEEE Transactions on Microwave Theory and Techniques, vol. 58, no. 5, pp. 1077, 2010.
Fujiwara, T., S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Low ohmic contact resistance m-plane AlGaN/GaN heterojunction field-effect transistors with enhancement-mode operations", Applied physics express, vol. 3, no. 10: IOP Publishing, pp. 101002, 2010.
Matioli, E., B. Fleury, E. Rangel, E. Hu, J. Speck, and C. Weisbuch, "Measurement of extraction and absorption parameters in GaN-based photonic-crystal light-emitting diodes", Journal of applied physics, vol. 107, no. 5: AIP, pp. 053114, 2010.
Wong, M. Hoi, Y. Pei, D. Brown, J. S. Speck, U. K. Mishra, M. L. Schuette, H. Kim, V. Balasubramanian, and W. Lu, "N-face GaN-based microwave metal-insulator-semiconductor high electron mobility transistors by plasma-assisted molecular beam epitaxy", Proceedings of CS MANTECH Conference. Oregon, USA, pp. 189–192, 2010.
Metcalfe, G. D., H. Shen, M. Wraback, A. Hirai, G. Koblmüller, C. S. Gallinat, and J. S. Speck, "Nitride semiconductors as terahertz sources based on spontaneous and piezoelectric polarization", physica status solidi (c), vol. 7, no. 10: Wiley Online Library, pp. 2455–2458, 2010.
Dasgupta, S., Y. Pei, B. L. Swenson, S. Keller, J. S. Speck, U. K. Mishra, and others, "N-polar GaN/AlN MIS-HEMT for Ka-band power applications", IEEE Electron Device Letters, vol. 31, no. 12: IEEE, pp. 1437–1439, 2010.
Mishra, U. K., M. Hoi Wong, S. Dasgupta, D. F. Brown, B. L. Swenson, S. Keller, J. S. Speck, and others, "N-polar GaN-based MIS-HEMTs for mixed signal applications", Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International: IEEE, pp. 1130–1133, 2010.
Raethel, J., P. Schley, E. Sakalauskas, G. Gobsch, R. Mueller, T. A. Klar, J. Pezoldt, R. Goldhahn, G. Koblmueller, J. S. Speck, et al., "Optical anisotropy of a-and m-plane InN grown on free-standing GaN substrates", Verhandlungen der Deutschen Physikalischen Gesellschaft, 2010.
Farrell, R. M., M. C. Schmidt, K-C. Kim, H. Masui, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers, 2010.
Hurni, C. A., O. Bierwagen, J. R. Lang, B. M. McSkimming, C. S. Gallinat, E. C. Young, D. A. Browne, U. K. Mishra, and J. S. Speck, "pn junctions on Ga-face GaN grown by NH 3 molecular beam epitaxy with low ideality factors and low reverse currents", Applied Physics Letters, vol. 97, no. 22: AIP, pp. 222113, 2010.
Hurni, C. A., O. Bierwagen, J. R. Lang, B. M. McSkimming, C. S. Gallinat, E. C. Young, D. A. Browne, U. K. Mishra, and J. S. Speck, "pn junctions on Ga-face GaN grown by NH 3 molecular beam epitaxy with low ideality factors and low reverse currents", Applied Physics Letters, vol. 97, no. 22: AIP, pp. 222113, 2010.
Wong, M. Hoi, F. Wu, J. S. Speck, and U. K. Mishra, "Polarity inversion of N-face GaN using an aluminum oxide interlayer", Journal of Applied Physics, vol. 108, no. 12: AIP, pp. 123710, 2010.
Singisetti, U., M. Hoi Wong, S. Dasgupta, J. S. Speck, and U. K. Mishra, "Proc. Device Research Conf., 2010 Proc. Device Research Conf., 2010 155, 2010", Proc. Device Research Conf, vol. 155, 2010.
Ben-Yaacov, T., T. Ive, C. G. Van de Walle, U. K. Mishra, J. S. Speck, and S. P. DenBaars, "Properties of In-doped ZnO films grown by metalorganic chemical vapor deposition on GaN (0001) templates", Journal of electronic materials, vol. 39, no. 5: Springer US, pp. 608–611, 2010.

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