Publications

Found 909 results
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2000
Hierro, A., SA. Ringel, M. Hansen, JS. Speck, UK. Mishra, and SP. DenBaars, "Hydrogen passivation of deep levels in n–GaN", Applied Physics Letters, vol. 77, no. 10: AIP, pp. 1499–1501, 2000.
Fini, P., A. Munkholm, C. Thompson, GB. Stephenson, JA. Eastman, MV. Ramana Murty, O. Auciello, L. Zhao, SP. DenBaars, and JS. Speck, "In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN", Applied Physics Letters, vol. 76, no. 26: AIP, pp. 3893–3895, 2000.
Fini, P., A. Munkholm, C. Thompson, GB. Stephenson, JA. Eastman, MV. Ramana Murty, O. Auciello, L. Zhao, SP. DenBaars, and JS. Speck, "In situ, real-time measurement of wing tilt during lateral epitaxial overgrowth of GaN", Applied Physics Letters, vol. 76, no. 26: AIP, pp. 3893–3895, 2000.
Munkholm, A., GB. Stephenson, JA. Eastman, O. Auciello, MV. Ramana Murty, C. Thompson, P. Fini, JS. Speck, and SP. DenBaars, "In situ studies of the effect of silicon on GaN growth modes", Journal of crystal growth, vol. 221, no. 1-4: North-Holland, pp. 98–105, 2000.
Munkholm, A., GB. Stephenson, JA. Eastman, O. Auciello, MV. Ramana Murty, C. Thompson, P. Fini, JS. Speck, and SP. DenBaars, "In situ studies of the effect of silicon on GaN growth modes", Journal of crystal growth, vol. 221, no. 1-4: North-Holland, pp. 98–105, 2000.
Munkholm, A., C. Thompson, MV. Ramana Murty, JA. Eastman, O. Auciello, GB. Stephenson, P. Fini, SP. DenBaars, and JS. Speck, "Layer-by-layer growth of GaN induced by silicon", Applied Physics Letters, vol. 77, no. 11: AIP, pp. 1626–1628, 2000.
Munkholm, A., C. Thompson, MV. Ramana Murty, JA. Eastman, O. Auciello, GB. Stephenson, P. Fini, SP. DenBaars, and JS. Speck, "Layer-by-layer growth of GaN induced by silicon", Applied Physics Letters, vol. 77, no. 11: AIP, pp. 1626–1628, 2000.
Fini, P., L. Zhao, J. S. Speck, S. P. DenBaars, A. Munkholm, C. Thompson, GB. Stephenson, JA. Eastman, RMV. Murty, and O. Auciello, Measurement and minimization of wing tilt in laterally overgrown GaN on a SiO ${$sub 2$}$ mask.: Argonne National Lab., IL (US), 2000.
Fini, P., L. Zhao, J. S. Speck, S. P. DenBaars, A. Munkholm, C. Thompson, GB. Stephenson, JA. Eastman, RMV. Murty, and O. Auciello, Measurement and minimization of wing tilt in laterally overgrown GaN on a SiO ${$sub 2$}$ mask.: Argonne National Lab., IL (US), 2000.
Smorchkova, IP., E. Haus, B. Heying, P. Kozodoy, P. Fini, JP. Ibbetson, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 76, no. 6: AIP, pp. 718–720, 2000.
Mathis, SK., AE. Romanov, LF. Chen, GE. Beltz, W. Pompe, and JS. Speck, "Modeling of threading dislocation reduction in growing GaN layers", Physica Status Solidi A Applied Research, vol. 179, no. 1: ACADEMIC VERLAG GMBH, pp. 125–146, 2000.
Green, DS., S. Heikman, B. Heying, PR. Tavernier, JS. Speck, DR. Clarke, SP. Den Baars, and UK. Mishra, "Molecular beam epitaxy of InGaN/GaN heterostructures for green luminescence", Compound Semiconductors, 2000 IEEE International Symposium on: IEEE, pp. 371–376, 2000.
Hierro, A., D. Kwon, SA. Ringel, M. Hansen, JS. Speck, UK. Mishra, and SP. DenBaars, "Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes", Applied Physics Letters, vol. 76, no. 21: AIP, pp. 3064–3066, 2000.
Heying, B., C. POBLENZ, C. ELSASS, P. Fini, S. DenBaars, J. Speck, Y. Smorchkova, and U. Mishra, "Optimization of the Electron Mobilites in GaN Grown by Plasma-assisted Molecular Beam Epitaxy", Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series, 2000.
Heying, B., I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, D. S Baars, U. Mishra, and JS. Speck, "Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 77, no. 18: AIP, pp. 2885–2887, 2000.
Mathis, SK., P. Chavarkar, AM. Andrews, UK. Mishra, and JS. Speck, "Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces-Interface Strain Effects and Atomic Level Characterization-Strain relaxation of InGaAs by lateral", Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur, vol. 18, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 2066–2071, 2000.
Mathis, SK., P. Chavarkar, AM. Andrews, UK. Mishra, and JS. Speck, "Papers from the 27th Conference on the Physics and Chemistry of Semiconductor Interfaces-Interface Strain Effects and Atomic Level Characterization-Strain relaxation of InGaAs by lateral", Journal of Vacuum Science and Technology-Section B-Microelectronics Nanometer Structur, vol. 18, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 2066–2071, 2000.
Elhamri, S., A. Saxler, D. Cull, WC. Mitchel, CR. Elsass, IP. Smorchkova, B. Heying, C. Poblenz, P. Fini, S. Keller, et al., "Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure", MRS Online Proceedings Library Archive, vol. 639: Cambridge University Press, 2000.
Elhamri, S., A. Saxler, WC. Mitchel, CR. Elsass, IP. Smorchkova, B. Heying, E. Haus, P. Fini, JP. Ibbetson, S. Keller, et al., "Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure", Journal of Applied Physics, vol. 88, no. 11: AIP, pp. 6583–6588, 2000.
Zhao, L., H. Marchand, P. Fini, SP. DenBaars, UK. Mishra, and JS. Speck, "Polarity determination for MOCVD growth of GaN on Si (111) by convergent beam electron diffraction", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 104–110, 2000.
Zhao, L., H. Marchand, P. Fini, SP. DenBaars, UK. Mishra, and JS. Speck, "Polarity determination for MOCVD growth of GaN on Si (111) by convergent beam electron diffraction", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 104–110, 2000.
Zhao, L., H. Marchand, P. Fini, SP. DenBaars, UK. Mishra, and JS. Speck, Polarity determination for MOCVD growth of GaN on Si (111) by convergent beam electron diffraction [Metal Organic Chemical Vapor Deposition]: Univ. of California, Santa Barbara, CA (US), 2000.
Zhao, L., H. Marchand, P. Fini, SP. DenBaars, UK. Mishra, and JS. Speck, Polarity determination for MOCVD growth of GaN on Si (111) by convergent beam electron diffraction [Metal Organic Chemical Vapor Deposition]: Univ. of California, Santa Barbara, CA (US), 2000.
Ibbetson, J. Paul, PT. Fini, KD. Ness, SP. DenBaars, JS. Speck, and UK. Mishra, "Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors", Applied Physics Letters, vol. 77, no. 2: AIP, pp. 250–252, 2000.
Mathis, SK., P. Chavarkar, AM. Andrews, UK. Mishra, and JS. Speck, "Reactive removal of misfit dislocations from InGaAs on GaAs by lateral oxidation", Applied Physics Letters, vol. 77, no. 6: AIP, pp. 845–847, 2000.

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