Publications
Found 909 results
Author Title Type [ Year
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, "Capacitance-voltage profiling on polar III-nitride heterostructures", Journal of Applied Physics, vol. 112, no. 8: AIP, pp. 083704, 2012.
, "Charge and Mobility Enhancements in In-Polar InAl (Ga) N/Al (Ga) N/GaN Heterojunctions Grown by Metal–Organic Chemical Vapor Deposition Using a Graded Growth Strategy", Japanese Journal of Applied Physics, vol. 51, no. 11R: IOP Publishing, pp. 115502, 2012.
, "Correlation between threading dislocation density and sheet resistance of AlGaN/AlN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 100, no. 26: AIP, pp. 262102, 2012.
, CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B) N ON VARIOUS SUBSTRATES, mar # " 22", 2012.
, "Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy", Applied Physics Letters, vol. 100, no. 5: AIP, pp. 052114, 2012.
, "Demonstration of Low ON-Resistance CAVETS with Ammonia MBE Grown Active p-GaN Layer as the Current Blocking Layer for High Power Applications", Meeting Abstracts, no. 30: The Electrochemical Society, pp. 2531–2531, 2012.
, "Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices", Journal of Applied Physics, vol. 111, no. 5: AIP, pp. 054503, 2012.
, "Direct correlation between specific trap formation and electric stress-induced degradation in MBE-grown AlGaN/GaN HEMTs", Reliability Physics Symposium (IRPS), 2012 IEEE International: IEEE, pp. 2C–3, 2012.
, "Effect of dislocations on electron mobility in AlGaN/GaN and AlGaN/AlN/GaN heterostructures", Applied Physics Letters, vol. 101, no. 26: AIP, pp. 262102, 2012.
, "Effect of indium on the conductivity of poly-crystalline GaN grown on high purity fused silica", physica status solidi (a), vol. 209, no. 3: WILEY-VCH Verlag Berlin, pp. 431–433, 2012.
, "Effects of strain relaxation on the photoluminescence of semipolar InGaN", Lasers and Electro-Optics (CLEO), 2012 Conference on: IEEE, pp. 1–2, 2012.
, "Enhancement-mode m-plane AlGaN/GaN HFETs with regrown n+-GaN contact layer", physica status solidi (c), vol. 9, no. 3-4: Wiley Online Library, pp. 891–893, 2012.
, "Enhancement-Mode N-Polar GaN MOS-HFET With 5-nm GaN Channel, 510-mS/mm $ g_ ${$m$}$ $, and 0.66-$$\backslash$Omega$\backslash$cdot$\backslash$hbox ${$mm$}$ $ $ R_ ${$$\backslash$rm on$}$ $", IEEE Electron Device Letters, vol. 33, no. 1: IEEE, pp. 26–28, 2012.
, "Erratum:ìAsymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructuresî[Appl. Phys. Lett. 101, 091601 (2012)]", Applied Physics Letters, vol. 101, no. 22: AIP, pp. 229902, 2012.
, "Erratum:ìAsymmetric interfacial abruptness in N-polar and Ga-polar GaN/AlN/GaN heterostructuresî[Appl. Phys. Lett. 101, 091601 (2012)]", Applied Physics Letters, vol. 101, no. 22: AIP, pp. 229902, 2012.
, "Growth and Characterization of N-Polar GaN Films on Si (111) by Plasma Assisted Molecular Beam Epitaxy", Japanese Journal of Applied Physics, vol. 51, no. 11R: IOP Publishing, pp. 115503, 2012.
, High Performance InGaN-Based Solar Cells: DTIC Document, 2012.
, "High-brightness polarized light-emitting diodes", Light: Science & Applications, vol. 1, no. 8: Nature Publishing Group, pp. e22, 2012.
, Iii-nitride flip-chip solar cells, jul # " 19", 2012.
, "Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO 2 on sapphire", Physical Review B, vol. 86, no. 24: American Physical Society, pp. 245315, 2012.
, Light emitting devices with embedded void-gap structures through bonding of structured materials on active devices, jan # " 26", 2012.
, "Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source", Applied Physics Letters, vol. 100, no. 7: AIP, pp. 072107, 2012.
, "Nm-scale measurements of fast surface potential transients in an AlGaN/GaN high electron mobility transistor", Applied Physics Letters, vol. 100, no. 19: AIP, pp. 193507, 2012.