Publications

Found 909 results
Author Title Type [ Year(Desc)]
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2005
Onuma, T., A. Chakraborty, BA. Haskell, S. Keller, SP. DenBaars, JS. Speck, S. Nakamura, UK. Mishra, T. Sota, and SF. Chichibu, "Localized exciton dynamics in nonpolar (11 2\= 0) In x Ga 1- x N multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", Applied Physics Letters, vol. 86, no. 15: AIP, pp. 151918, 2005.
Rajan, S., A. Chakraborty, U. K. Mishra, C. Poblenz, P. Waltereit, and J. S. Speck, "MBE-Grown AIGaN/GaN HEMTs on SiC", High Performance Devices, pp. 108–113, 2005.
Keller, S., P. Cantu, C. Moe, Y. Wu, S. Keller, U. K. Mishra, J. S. Speck, and S. P. DenBaars, "Metalorganic chemical vapor deposition conditions for efficient silicon doping in high Al-composition AlGaN films", Japanese journal of applied physics, vol. 44, no. 10R: IOP Publishing, pp. 7227, 2005.
Keller, S., P. Cantu, C. Moe, Y. Wu, S. Keller, U. K. Mishra, J. S. Speck, and S. P. DenBaars, "Metalorganic chemical vapor deposition conditions for efficient silicon doping in high Al-composition AlGaN films", Japanese journal of applied physics, vol. 44, no. 10R: IOP Publishing, pp. 7227, 2005.
Murai, A., C. Kruse, K. Samonji, L. McCarthy, J. S. Speck, U. K. Mishra, S. P. DenBaars, and D. Hommel, "Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L958, 2005.
Murai, A., C. Kruse, K. Samonji, L. McCarthy, J. S. Speck, U. K. Mishra, S. P. DenBaars, and D. Hommel, "Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L958, 2005.
Murai, A., C. Kruse, K. Samonji, L. McCarthy, J. S. Speck, U. K. Mishra, S. P. DenBaars, and D. Hommel, "Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L958, 2005.
Murai, A., C. Kruse, K. Samonji, L. McCarthy, J. S. Speck, U. K. Mishra, S. P. DenBaars, and D. Hommel, "Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding", Japanese Journal of Applied Physics, vol. 44, pp. L958, 2005.
Murai, A., C. Kruse, K. Samonji, L. McCarthy, J. S. Speck, U. K. Mishra, S. P. DenBaars, and D. Hommel, "Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding", Japanese Journal of Applied Physics, vol. 44, pp. L958, 2005.
Murai, A., C. Kruse, K. Samonji, L. McCarthy, J. S. Speck, U. K. Mishra, S. P. DenBaars, and D. Hommel, "Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II–VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding", Japanese Journal of Applied Physics, vol. 44, pp. L958, 2005.
Chakraborty, A., T. J. Baker, B. A. Haskell, F. Wu, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, "Milliwatt power blue InGaN/GaN light-emitting diodes on semipolar GaN templates", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L945, 2005.
Chakraborty, A., T. J. Baker, B. A. Haskell, F. Wu, J. S. Speck, S. P. Denbaars>, S. Nakamura, and U. K. Mishra, "Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates", Japanese Journal of Applied Physics, vol. 44, pp. L945, 2005.
Moe, C. G., H. Masui, M. C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J. S. Speck, et al., "Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide", Japanese Journal of Applied Physics, vol. 44, pp. L502, 2005.
Moe, C. G., H. Masui, M. C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J. S. Speck, et al., "Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide", Japanese Journal of Applied Physics, vol. 44, pp. L502, 2005.
Moe, C. G., H. Masui, M. C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J. S. Speck, et al., "Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide", Japanese Journal of Applied Physics, vol. 44, pp. L502, 2005.
Moe, C. G., H. Masui, M. C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J. S. Speck, et al., "Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide", Japanese Journal of Applied Physics, vol. 44, pp. L502, 2005.
Moe, C. G., H. Masui, M. C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J. S. Speck, et al., "Milliwatt power deep ultraviolet light emitting diodes grown on silicon carbide", Japanese journal of applied physics, vol. 44, no. 4L: IOP Publishing, pp. L502, 2005.
Moe, C. G., H. Masui, M. C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J. S. Speck, et al., "Milliwatt power deep ultraviolet light emitting diodes grown on silicon carbide", Japanese journal of applied physics, vol. 44, no. 4L: IOP Publishing, pp. L502, 2005.
Moe, C. G., H. Masui, M. C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J. S. Speck, et al., "Milliwatt power deep ultraviolet light emitting diodes grown on silicon carbide", Japanese journal of applied physics, vol. 44, no. 4L: IOP Publishing, pp. L502, 2005.
Moe, C. G., H. Masui, M. C. Schmidt, L. Shen, B. Moran, S. Newman, K. Vampola, T. Mates, S. Keller, J. S. Speck, et al., "Milliwatt power deep ultraviolet light emitting diodes grown on silicon carbide", Japanese journal of applied physics, vol. 44, no. 4L: IOP Publishing, pp. L502, 2005.
McLaurin, M., TE. Mates, and JS. Speck, "Molecular-beam epitaxy of p-type m-plane GaN", Applied Physics Letters, vol. 86, no. 26: AIP, pp. 262104, 2005.
McLaurin, M., TE. Mates, and JS. Speck, "Molecular-beam epitaxy of p-type m-plane GaN", Applied Physics Letters, vol. 86, no. 26: AIP, pp. 262104, 2005.
Armstrong, A., A. Arehart, D. Green, JS. Speck, UK. Mishra, and SA. Ringel, "A novel method to investigate defect states in MBE grown highly resistive GaN doped with C and Si", physica status solidi (c), vol. 2, no. 7: Wiley Online Library, pp. 2411–2414, 2005.
Masui, H., A. Chakraborty, B. A. Haskell, U. K. Mishra, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Polarized light emission from nonpolar InGaN light-emitting diodes grown on a bulk m-plane GaN substrate", Japanese journal of applied physics, vol. 44, no. 10L: IOP Publishing, pp. L1329, 2005.
Masui, H., A. Chakraborty, B. A. Haskell, U. K. Mishra, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Polarized light emission from nonpolar InGaN light-emitting diodes grown on a bulk m-plane GaN substrate", Japanese journal of applied physics, vol. 44, no. 10L: IOP Publishing, pp. L1329, 2005.

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