Publications

Found 696 results
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2007
Nakamura, S., S. P. DenBaars, J. S. Speck, M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, H. Sato, et al., "Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs", LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings, Oct, 2007.
Nakamura, S., SP. DenBaars, JS. Speck, MC. Schmidt, KC. Kim, RM. Farrell, DF. Feezell, DA. Cohen, M. Saito, H. Sato, et al., Recent Performance of Nonpolar/Semipolar/Polar GaN-Based Blue Emitting Devices and GaN bulk Crystal Growth, 2007.
Chakraborty, A., B. A. Haskell, F. Wu, S. Keller, S. P. DenBaars, S. Nakamura, J. S. Speck, and U. K. Mishra, "Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films", Japanese Journal of Applied Physics, vol. 46, no. 2R: IOP Publishing, pp. 542, 2007.
Kim, K-C., M. C. Schmidt, H. Sato, F. Wu, N. Fellows, Z. Jia, M. Saito, S. Nakamura, S. P. DenBaars, J. S. Speck, et al., "Study of nonpolar m-plane In Ga N/ Ga N multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition", Applied Physics Letters, vol. 91, no. 18: AIP, pp. 181120, 2007.
Koblmüller, G., CS. Gallinat, and JS. Speck, "Surface kinetics and thermal instability of N-face InN grown by plasma-assisted molecular beam epitaxy", Journal of applied physics, vol. 101, no. 8: AIP, pp. 083516, 2007.
Chu, R., L. Shen, N. Fichtenbaum, S. Keller, A. Corrion, C. Poblenz, J. Speck, and U. Mishra, "Surface treatment for leakage reduction in AlGaN/GaN HEMTs", Device Research Conference, 2007 65th Annual: IEEE, pp. 127–128, 2007.
Chern, G. D., H. Shen, M. Wraback, G. Koblmüller, C. Gallinat, and J. Speck, "Terahertz Emission from Indium Nitride Multiple Quantum Wells", Optical Terahertz Science and Technology: Optical Society of America, pp. MA3, 2007.
Wu, Y., CG. Moe, S. Keller, SP. DenBaars, and JS. Speck, "Vertical defects in heavily Mg-doped Al0. 69Ga0. 31N", physica status solidi (a), vol. 204, no. 10: Wiley Online Library, pp. 3423–3428, 2007.
2006
Moe, C. G., Y. Wu, J. Piprek, S. Keller, J. S. Speck, S. P. DenBaars, and D. Emerson, "AlGaN/AlN distributed bragg reflectors for deep ultraviolet wavelengths", physica status solidi (a), vol. 203, no. 8: Wiley Online Library, pp. 1915–1919, 2006.
Fehlberg, T. B., G. A. Umana-Membreno, B. D. Nener, G. Parish, C. S. Gallinat, G. Koblmüller, S. Bernardis, and J. S. Speck, "Characterisation of Electron Transport in MBE Grown Indium Nitride", Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on: IEEE, pp. 11–14, 2006.
Fehlberg, T. B., G. A. Umana-Membreno, B. D. Nener, G. Parish, C. S. Gallinat, G. Koblmüller, S. Rajan, S. Bernardis, and J. S. Speck, "Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy", Japanese journal of applied physics, vol. 45, no. 10L: IOP Publishing, pp. L1090, 2006.
Barabash, R. I., O. M. Barabash, G. E. Ice, C. Roder, S. Figge, S. Einfeldt, D. Hommel, TM. Katona, JS. Speck, SP. DenBaars, et al., "Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers", physica status solidi (a), vol. 203, no. 1: WILEY-VCH Verlag, pp. 142–148, 2006.
Chern, G., E. Readinger, H. Shen, M. Wraback, C. Gallinat, G. Koblmueller, and J. Speck, "Comparison of terahertz emission from N-face and In-face indium nitride thin films", APS Meeting Abstracts, 2006.
Romanov, AE., GE. Beltz, P. Cantu, F. Wu, S. Keller, SP. DenBaars, and JS. Speck, "Cracking of III-nitride layers with strain gradients", Applied physics letters, vol. 89, no. 16: AIP, pp. 161922, 2006.
Moe, C. G., Y. Wu, S. Keller, J. S. Speck, S. P. DenBaars, and D. Emerson, "Crystal quality and growth evolution of aluminum nitride on silicon carbide", physica status solidi (a), vol. 203, no. 7: Wiley Online Library, pp. 1708–1711, 2006.
Chakraborty, A., KC. Kim, F. Wu, JS. Speck, SP. DenBaars, and UK. Mishra, "Defect reduction in nonpolar a-plane GaN films using in situ Si N x nanomask", Applied physics letters, vol. 89, no. 4: AIP, pp. 041903, 2006.
Kamber, D. S., Y. Wu, B. A. Haskell, S. Newman, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy", Journal of crystal growth, vol. 297, no. 2: Elsevier, pp. 321–325, 2006.
Kaeding, J. F., M. Iza, H. Sato, S. DenBaars, J. Speck, and S. Nakamura, "Effect of Substrate Miscut on the Direct Growth of Semipolar (101̄1̄) GaN on (100) MgAl 2 O 4 by Metalorganic Chemical Vapor Deposition", Japanese Journal of Applied Physics, vol. 45, 06, 2006.
Keller, S., N. Fichtenbaum, F. Wu, G. Lee, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC", Japanese journal of applied physics, vol. 45, no. 3L: IOP Publishing, pp. L322, 2006.
Chern, G. D., E. D. Readinger, H. Shen, M. Wraback, C. S. Gallinat, G. Koblmüller, and J. S. Speck, "Excitation wavelength dependence of terahertz emission from InN and InAs", Applied physics letters, vol. 89, no. 14: AIP, pp. 141115, 2006.
Onuma, T., A. Chakraborty, BA. Haskell, S. Keller, T. Sota, UK. Mishra, SP. DenBaars, JS. Speck, S. Nakamura, and SF. Chichibu, "Exciton dynamics in nonpolar (11$$\backslash$bar 2 $0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", physica status solidi (c), vol. 3, no. 6: WILEY-VCH Verlag, pp. 2082–2086, 2006.
Brown, J. S., G. Koblmüller, F. Wu, R. Averbeck, H. Riechert, and J. S. Speck, "Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and reflection high-energy electron diffraction", Journal of applied physics, vol. 99, no. 7: AIP, pp. 074902, 2006.
Brown, JS., G. Koblmüller, F. Wu, R. Averbeck, H. Riechert, and JS. Speck, "Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and", Info: Postprints, UC Santa Barbara, 2006.
Shen, L., L. McCarthy, T. Palacios, MH. Wong, C. Poblenz, A. Corrion, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation", Device Research Conference, 2006 64th: IEEE, pp. 101–102, 2006.
Brown, J. S., G. Koblmüller, R. Averbeck, H. Riechert, and J. S. Speck, "In situ characterization of GaN quantum dot growth with reflection high-energy electron diffraction and line-of-sight mass spectrometry", Journal of applied physics, vol. 99, no. 12: AIP, pp. 124909, 2006.

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