Publications

Found 696 results
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2005
Ueda, O., H. Amano, S. Fujita, K. Kishino, K. Hiramatsu, M. Kawasaki, S. Chichibu, S. Niki, H. Hirayama, J. Speck, et al., Selected topics in applied physics III-Physics of UV materials and devices and their applications: JAPAN SOC APPLIED PHYSICS KUDAN-KITA BUILDING 5TH FLOOR, 1-12-3 KUDAN-KITA, CHIYODA-KU, TOKYO, 102-0073, JAPAN, 2005.
Rudin, S., GA. Garrett, H. Shen, M. Wraback, B. Imer, B. Haskell, JS. Speck, S. Keller, S. Nakamura, and SP. DenBaars, "Temperature-dependent Radiative Lifetimes of Excitons in Non-polar GaN/AlGaN Quantum Wells", Semiconductor Device Research Symposium, 2005 International: IEEE, pp. 225–226, 2005.
2006
Moe, C. G., Y. Wu, J. Piprek, S. Keller, J. S. Speck, S. P. DenBaars, and D. Emerson, "AlGaN/AlN distributed bragg reflectors for deep ultraviolet wavelengths", physica status solidi (a), vol. 203, no. 8: Wiley Online Library, pp. 1915–1919, 2006.
Fehlberg, T. B., G. A. Umana-Membreno, B. D. Nener, G. Parish, C. S. Gallinat, G. Koblmüller, S. Bernardis, and J. S. Speck, "Characterisation of Electron Transport in MBE Grown Indium Nitride", Optoelectronic and Microelectronic Materials and Devices, 2006 Conference on: IEEE, pp. 11–14, 2006.
Fehlberg, T. B., G. A. Umana-Membreno, B. D. Nener, G. Parish, C. S. Gallinat, G. Koblmüller, S. Rajan, S. Bernardis, and J. S. Speck, "Characterisation of multiple carrier transport in indium nitride grown by molecular beam epitaxy", Japanese journal of applied physics, vol. 45, no. 10L: IOP Publishing, pp. L1090, 2006.
Barabash, R. I., O. M. Barabash, G. E. Ice, C. Roder, S. Figge, S. Einfeldt, D. Hommel, TM. Katona, JS. Speck, SP. DenBaars, et al., "Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers", physica status solidi (a), vol. 203, no. 1: WILEY-VCH Verlag, pp. 142–148, 2006.
Chern, G., E. Readinger, H. Shen, M. Wraback, C. Gallinat, G. Koblmueller, and J. Speck, "Comparison of terahertz emission from N-face and In-face indium nitride thin films", APS Meeting Abstracts, 2006.
Romanov, AE., GE. Beltz, P. Cantu, F. Wu, S. Keller, SP. DenBaars, and JS. Speck, "Cracking of III-nitride layers with strain gradients", Applied physics letters, vol. 89, no. 16: AIP, pp. 161922, 2006.
Moe, C. G., Y. Wu, S. Keller, J. S. Speck, S. P. DenBaars, and D. Emerson, "Crystal quality and growth evolution of aluminum nitride on silicon carbide", physica status solidi (a), vol. 203, no. 7: Wiley Online Library, pp. 1708–1711, 2006.
Chakraborty, A., KC. Kim, F. Wu, JS. Speck, SP. DenBaars, and UK. Mishra, "Defect reduction in nonpolar a-plane GaN films using in situ Si N x nanomask", Applied physics letters, vol. 89, no. 4: AIP, pp. 041903, 2006.
Kamber, D. S., Y. Wu, B. A. Haskell, S. Newman, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy", Journal of crystal growth, vol. 297, no. 2: Elsevier, pp. 321–325, 2006.
Kaeding, J. F., M. Iza, H. Sato, S. DenBaars, J. Speck, and S. Nakamura, "Effect of Substrate Miscut on the Direct Growth of Semipolar (101̄1̄) GaN on (100) MgAl 2 O 4 by Metalorganic Chemical Vapor Deposition", Japanese Journal of Applied Physics, vol. 45, 06, 2006.
Keller, S., N. Fichtenbaum, F. Wu, G. Lee, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC", Japanese journal of applied physics, vol. 45, no. 3L: IOP Publishing, pp. L322, 2006.
Chern, G. D., E. D. Readinger, H. Shen, M. Wraback, C. S. Gallinat, G. Koblmüller, and J. S. Speck, "Excitation wavelength dependence of terahertz emission from InN and InAs", Applied physics letters, vol. 89, no. 14: AIP, pp. 141115, 2006.
Onuma, T., A. Chakraborty, BA. Haskell, S. Keller, T. Sota, UK. Mishra, SP. DenBaars, JS. Speck, S. Nakamura, and SF. Chichibu, "Exciton dynamics in nonpolar (11$$\backslash$bar 2 $0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", physica status solidi (c), vol. 3, no. 6: WILEY-VCH Verlag, pp. 2082–2086, 2006.
Brown, J. S., G. Koblmüller, F. Wu, R. Averbeck, H. Riechert, and J. S. Speck, "Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and reflection high-energy electron diffraction", Journal of applied physics, vol. 99, no. 7: AIP, pp. 074902, 2006.
Brown, JS., G. Koblmüller, F. Wu, R. Averbeck, H. Riechert, and JS. Speck, "Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and", Info: Postprints, UC Santa Barbara, 2006.
Shen, L., L. McCarthy, T. Palacios, MH. Wong, C. Poblenz, A. Corrion, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation", Device Research Conference, 2006 64th: IEEE, pp. 101–102, 2006.
Brown, J. S., G. Koblmüller, R. Averbeck, H. Riechert, and J. S. Speck, "In situ characterization of GaN quantum dot growth with reflection high-energy electron diffraction and line-of-sight mass spectrometry", Journal of applied physics, vol. 99, no. 12: AIP, pp. 124909, 2006.
Wraback, M., G. D. Chern, E. D. Readinger, P. H. Shen, G. Koblmueller, C. S. Gallinat, J. S. Speck, and W. J. Schaff, Indium Nitride: A New Material for High Efficiency, Compact, 1550NM Laser-Based Terahertz Sources in Explosives Detection and Concealed Weapons Imaging: DTIC Document, 2006.
Gallinat, C. S., G. Koblmüller, J. S. Brown, S. Bernardis, J. S. Speck, G. D. Chern, E. D. Readinger, H. Shen, and M. Wraback, "In-polar InN grown by plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 89, no. 3: AIP, pp. 032109, 2006.
Barabash, RI., G. E. Ice, W. Liu, C. Roder, S. Figge, S. Einfeldt, D. Hommel, TM. Katona, JS. Speck, SP. DenBaars, et al., "Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction", physica status solidi (b), vol. 243, no. 7: Wiley Online Library, pp. 1508–1513, 2006.
Paskova, T., R. Kroeger, PP. Paskov, S. Figge, D. Hommel, B. Monemar, B. Haskell, P. Fini, JS. Speck, and S. Nakamura, "Microscopic emission properties of nonpolar α-plane GaN grown by HVPE", Gallium Nitride Materials and Devices, vol. 6121: International Society for Optics and Photonics, pp. 612106, 2006.
Craven, M. D., S. Keller, S. P. DenBaars, T. Margalith, J. Stephen Speck, S. Nakamura, and U. K. Mishra, Non-polar (Al, B, In, Ga) N quantum well and heterostructure materials and devices, 2006.
Chakraborty, A., B. A. Haskell, H. Masui, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, "Nonpolar m-plane blue-light-emitting diode lamps with output power of 23.5 mW under pulsed operation", Japanese journal of applied physics, vol. 45, no. 2R: IOP Publishing, pp. 739, 2006.

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