Publications

Found 696 results
Author Title Type [ Year(Desc)]
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2013
Pimputkar, S., D. S. Kamber, J. S. Speck, and S. Nakamura, Using boron-containing compounds, gasses and fluids during ammonothermal growth of group-iii nitride crystals, 2013.
2014
Korhonen, E., F. Tuomisto, O. Bierwagen, JS. Speck, and Z. Galazka, "Compensating vacancy defects in Sn-and Mg-doped In 2 O 3", Physical Review B, vol. 90, no. 24: American Physical Society, pp. 245307, 2014.
Ahmadi, E., H. Chalabi, S. W. Kaun, R. Shivaraman, J. S. Speck, and U. K. Mishra, "Contribution of alloy clustering to limiting the two-dimensional electron gas mobility in AlGaN/GaN and InAlN/GaN heterostructures: Theory and experiment", Journal of Applied Physics, vol. 116, no. 13: AIP Publishing, pp. 133702, 2014.
Sasikumar, A., AR. Arehart, SW. Kaun, J. Chen, EX. Zhang, DM. Fleetwood, RD. Schrimpf, JS. Speck, and SA. Ringel, "Defects in GaN based transistors", Gallium Nitride Materials and Devices IX, vol. 8986: International Society for Optics and Photonics, pp. 89861C, 2014.
Mogilatenko, A., H. Kirmse, O. Bierwagen, M. Schmidbauer, M-Y. Tsai, I. Häusler, M. E. White, and J. S. Speck, "Effect of heavy Ga doping on defect structure of SnO2 layers", physica status solidi (a), vol. 211, no. 1: Wiley Online Library, pp. 87–92, 2014.
Ahmadi, E., R. Shivaraman, F. Wu, S. Wienecke, S. W. Kaun, S. Keller, J. S. Speck, and U. K. Mishra, "Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime", Applied Physics Letters, vol. 104, no. 7: AIP, pp. 072107, 2014.
Ahmadi, E., R. Shivaraman, F. Wu, S. Wienecke, S. W. Kaun, S. Keller, J. S. Speck, and U. K. Mishra, "Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime", Applied Physics Letters, vol. 104, no. 7: AIP, pp. 072107, 2014.
Chakraborty, A., B. A. Haskell, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition, 2014.
Kaun, S. W., E. Ahmadi, B. Mazumder, F. Wu, E. C. H. Kyle, P. G. Burke, U. K. Mishra, and J. S. Speck, "GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 29, no. 4: IOP Publishing, pp. 045011, 2014.
Kaun, S. W., E. Ahmadi, B. Mazumder, F. Wu, E. C. H. Kyle, P. G. Burke, U. K. Mishra, and J. S. Speck, "GaN-based high-electron-mobility transistor structures with homogeneous lattice-matched InAlN barriers grown by plasma-assisted molecular beam epitaxy", Semiconductor Science and Technology, vol. 29, no. 4: IOP Publishing, pp. 045011, 2014.
Linez, F., M. Ritt, C. Rauch, L. Kilanski, S. Choi, J. Räisänen, JS. Speck, and F. Tuomisto, "He implantation induced defects in InN", Journal of Physics: Conference Series, vol. 505, no. 1: IOP Publishing, pp. 012012, 2014.
Saito, M., S-ichiro. Kawabata, D. S. Kamber, S. P. DenBaars, J. S. Speck, and S. Nakamura, Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same, 2014.
Saito, M., S-ichiro. Kawabata, D. S. Kamber, S. P. DenBaars, J. S. Speck, and S. Nakamura, Hexagonal wurtzite type epitaxial layer possessing a low alkali-metal concentration and method of creating the same, 2014.
Kyle, E. C. H., S. W. Kaun, P. G. Burke, F. Wu, Y-R. Wu, and J. S. Speck, "High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy", Journal of applied physics, vol. 115, no. 19: AIP, pp. 193702, 2014.
Kyle, E. C. H., S. W. Kaun, P. G. Burke, F. Wu, Y-R. Wu, and J. S. Speck, "High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy", Journal of applied physics, vol. 115, no. 19: AIP, pp. 193702, 2014.
Young, NG., EE. Perl, RM. Farrell, M. Iza, S. Keller, JE. Bowers, S. Nakamura, SP. DenBaars, and JS. Speck, "High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration", Applied Physics Letters, vol. 104, no. 16: AIP, pp. 163902, 2014.
Pimputkar, S., S. Kawabata, JS. Speck, and S. Nakamura, "Improved growth rates and purity of basic ammonothermal GaN", Journal of Crystal Growth, vol. 403: Elsevier, pp. 7–17, 2014.
Koslow, I. L., C. McTaggart, F. Wu, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Improved performance of long-wavelength light-emitting diodes grown with wide quantum wells on stress-relaxed InxGa1- xN buffer layers", Applied Physics Express, vol. 7, no. 3: IOP Publishing, pp. 031003, 2014.
Chakraborty, A., K-C. Kim, J. S. Speck, S. P. DenBaars, and U. K. Mishra, In-situ defect reduction techniques for nonpolar and semipolar (Al, Ga, In) N, 2014.
Lee, C. Hoon, J. S. Speck, H. San Kim, J. Jo Kim, S. Han Kim, and J. Ho Lee, Light emitting device for AC power operation, oct # " 21", 2014.
Lee, C. Hoon, J. S. Speck, H. San Kim, J. Jo Kim, S. Han Kim, and J. Ho Lee, Light emitting device for AC power operation, oct # " 21", 2014.
Yeluri, R., J. Lu, D. Browne, C. A. Hurni, S. Chowdhury, S. Keller, J. S. Speck, and U. K. Mishra, "Low ON-resistance and high current GaN vertical electron transistors with buried p-GaN layers", Device Research Conference (DRC), 2014 72nd Annual: IEEE, pp. 253–254, 2014.
Liu, X., SH. Chan, F. Wu, Y. Li, S. Keller, JS. Speck, and UK. Mishra, "Metalorganic chemical vapor deposition of Al 2 O 3 using trimethylaluminum and O 2 precursors: Growth mechanism and crystallinity", Journal of Crystal Growth, vol. 408: Elsevier, pp. 78–84, 2014.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura, and others, Miscut semipolar optoelectronic device, jul # " 3", 2014.
Hurni, C. A., H. Kroemer, U. K. Mishra, and J. S. Speck, "m-plane (10 1\= 0) and (20 2\= 1) GaN/AlxGa1–xN conduction band offsets measured by capacitance-voltage profiling", Applied Physics Letters, vol. 105, no. 23: AIP Publishing, pp. 232108, 2014.

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