Publications

Found 696 results
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2007
Onuma, T., T. Koyama, A. Chakraborty, M. McLaurin, BA. Haskell, PT. Fini, S. Keller, SP. DenBaars, JS. Speck, S. Nakamura, et al., "Papers from the 34th Annual Conference on the Physics and Chemistry of Semiconductor Interfaces-Complex Oxides-Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1-xN/GaN multiple", Journal of Vacuum Science and Technology-Section B, vol. 25, no. 4: Woodbury, NY: Published for the Society by the American Institute of Physics, 1991-, pp. 1524–1528, 2007.
Fujii, K., Y. Iwaki, H. Masui, T. J. Baker, M. Iza, H. Sato, J. Kaeding, T. Yao, J. S. Speck, S. P. DenBaars, et al., "Photoelectrochemical properties of nonpolar and semipolar GaN", Japanese Journal of Applied Physics, vol. 46, no. 10R: IOP Publishing, pp. 6573, 2007.
Onuma, T., T. Koyama, A. Chakraborty, M. McLaurin, BA. Haskell, PT. Fini, S. Keller, SP. DenBaars, JS. Speck, S. Nakamura, et al., "Radiative and nonradiative lifetimes in nonpolar m-plane In x Ga 1- x N/ Ga N multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 25, no. 4: AVS, pp. 1524–1528, 2007.
Onuma, T., T. Koyama, A. Chakraborty, M. McLaurin, BA. Haskell, PT. Fini, S. Keller, SP. DenBaars, JS. Speck, S. Nakamura, et al., "Radiative and nonradiative lifetimes in nonpolar m-plane In x Ga 1- x N/ Ga N multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 25, no. 4: AVS, pp. 1524–1528, 2007.
Nakamura, S., S. P. DenBaars, J. S. Speck, M. C. Schmidt, K. C. Kim, R. M. Farrell, D. F. Feezell, D. A. Cohen, M. Saito, H. Sato, et al., "Recent Performance of Nonpolar/Semipolar GaN-based Blue LEDs/LDs", LEOS 2007 - IEEE Lasers and Electro-Optics Society Annual Meeting Conference Proceedings, Oct, 2007.
Nakamura, S., SP. DenBaars, JS. Speck, MC. Schmidt, KC. Kim, RM. Farrell, DF. Feezell, DA. Cohen, M. Saito, H. Sato, et al., Recent Performance of Nonpolar/Semipolar/Polar GaN-Based Blue Emitting Devices and GaN bulk Crystal Growth, 2007.
Chakraborty, A., B. A. Haskell, F. Wu, S. Keller, S. P. DenBaars, S. Nakamura, J. S. Speck, and U. K. Mishra, "Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films", Japanese Journal of Applied Physics, vol. 46, no. 2R: IOP Publishing, pp. 542, 2007.
Kim, K-C., M. C. Schmidt, H. Sato, F. Wu, N. Fellows, Z. Jia, M. Saito, S. Nakamura, S. P. DenBaars, J. S. Speck, et al., "Study of nonpolar m-plane In Ga N/ Ga N multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition", Applied Physics Letters, vol. 91, no. 18: AIP, pp. 181120, 2007.
Koblmüller, G., CS. Gallinat, and JS. Speck, "Surface kinetics and thermal instability of N-face InN grown by plasma-assisted molecular beam epitaxy", Journal of applied physics, vol. 101, no. 8: AIP, pp. 083516, 2007.
Chu, R., L. Shen, N. Fichtenbaum, S. Keller, A. Corrion, C. Poblenz, J. Speck, and U. Mishra, "Surface treatment for leakage reduction in AlGaN/GaN HEMTs", Device Research Conference, 2007 65th Annual: IEEE, pp. 127–128, 2007.
Chern, G. D., H. Shen, M. Wraback, G. Koblmüller, C. Gallinat, and J. Speck, "Terahertz Emission from Indium Nitride Multiple Quantum Wells", Optical Terahertz Science and Technology: Optical Society of America, pp. MA3, 2007.
Wu, Y., CG. Moe, S. Keller, SP. DenBaars, and JS. Speck, "Vertical defects in heavily Mg-doped Al0. 69Ga0. 31N", physica status solidi (a), vol. 204, no. 10: Wiley Online Library, pp. 3423–3428, 2007.
2008
Gorczyca, I., L. Dmowski, J. Plesiewicz, T. Suski, N. Egede Christensen, A. Svane, CS. Gallinat, G. Koblmueller, and JS. Speck, "Band structure and effective mass of InN under pressure", physica status solidi (b), vol. 245, no. 5: Wiley Online Library, pp. 887–889, 2008.
Kim, K. Choong, M. C. Schmidt, F. Wu, A. Hirai, M. B. McLaurin, S. P. DenBaars, S. Nakamura, and J. S. Speck, CRYSTAL GROWTH OF M-PLANE AND SEMIPOLAR PLANES OF (Al, In, Ga, B) N ON VARIOUS SUBSTRATES, 2008.
Hol\`y, V., T. Baumbach, D. Lübbert, L. Helfen, M. Ellyan, P. Mikulík, S. Keller, SP. DenBaars, and J. Speck, "Diffuse x-ray scattering from statistically inhomogeneous distributions of threading dislocations beyond the ergodic hypothesis", Physical Review B, vol. 77, no. 9: American Physical Society, pp. 094102, 2008.
Koblmüller, G., R. Chu, F. Wu, U. K. Mishra, and J. S. Speck, "Dislocation reduction in AlGaN/GaN heterostructures on 4H-SiC by molecular beam epitaxy in the thermal decomposition regime", Applied physics express, vol. 1, no. 6: IOP Publishing, pp. 061103, 2008.
Fehlberg, T. B., C. S. Gallinat, G. A. Umana-Membreno, G. Koblmüller, B. D. Nener, J. S. Speck, and G. Parish, "Effect of MBE growth conditions on multiple electron transport in InN", Journal of Electronic Materials, vol. 37, no. 5: Springer US, pp. 593–596, 2008.
Imer, B., B. Haskell, S. Rajan, S. Keller, U. K. Mishra, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Electrical characterization of low defect density nonpolar (11\= 2 0) a-plane GaN grown with sidewall lateral epitaxial overgrowth (SLEO)", Journal of Materials Research, vol. 23, no. 2: Cambridge University Press, pp. 551–555, 2008.
Gorczyca, I., J. Plesiewicz, L. Dmowski, T. Suski, N. Egede Christensen, A. Svane, CS. Gallinat, G. Koblmueller, and JS. Speck, "Electronic structure and effective masses of InN under pressure", Journal of Applied Physics, vol. 104, no. 1: AIP, pp. 013704, 2008.
Brown, D. F., S. Keller, F. Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Growth and characterization of N-polar GaN films on SiC by metal organic chemical vapor deposition", Journal of Applied Physics, vol. 104, no. 2: AIP, pp. 024301, 2008.
Imer, B., M. Schmidt, B. Haskell, S. Rajan, B. Zhong, K. Kim, F. Wu, T. Mates, S. Keller, U. K. Mishra, et al., "Improved quality nonpolar a-plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO)", physica status solidi (a), vol. 205, no. 7: WILEY-VCH Verlag, pp. 1705–1712, 2008.
Imer, B., M. Schmidt, B. Haskell, S. Rajan, B. Zhong, K. Kim, F. Wu, T. Mates, S. Keller, U. K. Mishra, et al., "Improved quality nonpolar a-plane GaN/AlGaN UV LEDs grown with sidewall lateral epitaxial overgrowth (SLEO)", physica status solidi (a), vol. 205, no. 7: WILEY-VCH Verlag, pp. 1705–1712, 2008.
Fernández-Garrido, S., G. Koblmüller, E. Calleja, and J. S. Speck, "In situ GaN decomposition analysis by quadrupole mass spectrometry and reflection high-energy electron diffraction", Journal of applied physics, vol. 104, no. 3: AIP, pp. 033541, 2008.
Wraback, M., G. D. Chern, E. D. Readinger, P. H. Shen, G. Koblmüller, C. Gallinat, and J. S. Speck, "Indium Nitride: A New Material for High Efficiency, Compact, 1550nm Laser-Based Terahertz Sources in Chemical and Biological Detection", International Journal of High Speed Electronics and Systems, vol. 18, no. 01: World Scientific, pp. 3–9, 2008.
King, PDC., TD. Veal, CS. Gallinat, G. Koblmüller, LR. Bailey, JS. Speck, and CF. McConville, "Influence of growth conditions and polarity on interface-related electron density in InN", Journal of Applied Physics, vol. 104, no. 10: AIP, pp. 103703, 2008.

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