Publications

Found 220 results
Author Title Type [ Year(Desc)]
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2013
Farrell, RM., AA. Al-Heji, CJ. Neufeld, X. Chen, M. Iza, SC. Cruz, S. Keller, S. Nakamura, SP. DenBaars, UK. Mishra, et al., "Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells", Applied Physics Letters, vol. 103, no. 24: AIP, pp. 241104, 2013.
Young, NG., RM. Farrell, YL. Hu, Y. Terao, M. Iza, S. Keller, SP. DenBaars, S. Nakamura, and JS. Speck, "High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates", Applied Physics Letters, vol. 103, no. 17: AIP, pp. 173903, 2013.
Keller, S., R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells", Japanese Journal of Applied Physics, vol. 52, no. 8S: IOP Publishing, pp. 08JC10, 2013.
Farrell, R. M., D. J. Friedman, NG. Young, EE. Perl, N. Singh, , CJ. Neufeld, M. Iza, SC. Cruz, S. Keller, et al., "InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura, and others, Miscut semipolar optoelectronic device, 2013.
Das, NC., ML. Reed, AV. Sampath, H. Shen, M. Wraback, RM. Farrell, M. Iza, SC. Cruz, , NG. Young, et al., "Optimization of annealing process for improved InGaN solar cell performance", Journal of electronic materials, vol. 42, no. 12: Springer US, pp. 3467–3470, 2013.
Speck, J. S., E. L. Hu, C. C. A. Weisbuch, Y. Seok Choi, G. Koblmüller, M. Iza, and C. Hurni, SELECTIVE DRY ETCHING OF N-FACE (Al, In, Ga) N HETEROSTRUCTURES, apr # " 25", 2013.
2014
Iveland, J., J. Speck, L. Martinelli, J. Peretti, and C. Weisbuch, "Auger effect identified as main cause of efficiency droop in leds", SPIE Newsroom, pp. 1–4, 2014.
Piccardo, M., L. Martinelli, J. Iveland, N. Young, S. P. DenBaars, S. Nakamura, J. S. Speck, C. Weisbuch, and J. Peretti, "Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy", Physical Review B, vol. 89, no. 23: APS, pp. 235124, 2014.
Imer, B. M., J. S. Speck, S. P. DenBaars, and S. Nakamura, Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD), 2014.
Marcinkevičius, S., R. Ivanov, Y. Zhao, S. Nakamura, SP. DenBaars, and JS. Speck, "Highly polarized photoluminescence and its dynamics in semipolar (20 2\= 1\=) InGaN/GaN quantum well", Applied Physics Letters, vol. 104, no. 11: AIP, pp. 111113, 2014.
Young, NG., EE. Perl, RM. Farrell, M. Iza, S. Keller, JE. Bowers, S. Nakamura, SP. DenBaars, and JS. Speck, "High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration", Applied Physics Letters, vol. 104, no. 16: AIP, pp. 163902, 2014.
Peretti, J., C. Weisbuch, J. Iveland, M. Piccardo, L. Martinelli, and J. S. Speck, "Identification of Auger effect as the dominant mechanism for efficiency droop of LEDs", Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, vol. 9003: International Society for Optics and Photonics, pp. 90030Z, 2014.
Farrell, R. M., M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, METHOD OF IMPROVING SURFACE MORPHOLOGY OF (Ga, Al, In, B) N THIN FILMS AND DEVICES GROWN ON NONPOLAR OR SEMIPOLAR (Ga, Al, In, B) N SUBSTRATES, 2014.
Farrell, R. M., M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method of improving surface morphology of (Ga, Al, In, B) N thin films and devices grown on nonpolar or semipolar (Ga, Al, In, B) N substrates, aug # " 5", 2014.
Kaeding, J. F., D-S. Lee, M. Iza, T. J. Baker, H. Sato, B. A. Haskell, J. S. Speck, S. P. DenBaars, S. Nakamura, and others, Miscut semipolar optoelectronic device, jul # " 3", 2014.
Iveland, J., M. Piccardo, L. Martinelli, J. Peretti, J. Won Choi, N. Young, S. Nakamura, J. S. Speck, and C. Weisbuch, "Origin of electrons emitted into vacuum from InGaN light emitting diodes", Applied Physics Letters, vol. 105, no. 5: AIP Publishing, pp. 052103, 2014.
Hirai, A., Z. Jia, M. Saito, H. Yamada, K. Iso, S. P. DenBaars, S. Nakamura, and J. S. Speck, Planar nonpolar group-III nitride films grown on miscut substrates, 2014.
2015
Iza, M., J. S. Speck, S. Nakamura, and S. P. DenBaars, (Al, In, Ga, B) N DEVICE STRUCTURES ON A PATTERNED SUBSTRATE, 2015.
Korhonen, E., V. Prozheeva, F. Tuomisto, O. Bierwagen, JS. Speck, ME. White, Z. Galazka, H. Liu, N. Izyumskaya, V. Avrutin, et al., "Cation vacancies and electrical compensation in Sb-doped thin-film SnO2 and ZnO", Semiconductor Science and Technology, vol. 30, no. 2: IOP Publishing, pp. 024011, 2015.
Weisbuch, C., M. Piccardo, L. Martinelli, J. Iveland, J. Peretti, and J. S. Speck, "The efficiency challenge of nitride light-emitting diodes for lighting", physica status solidi (a), vol. 212, no. 5, pp. 899–913, 2015.
Pimputkar, S., S. Suihkonen, M. Imade, Y. Mori, JS. Speck, and S. Nakamura, "Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals", Journal of Crystal Growth, vol. 432: Elsevier, pp. 49–53, 2015.
Gelžinyt\.e, K., R. Ivanov, S. Marcinkevičius, Y. Zhao, DL. Becerra, S. Nakamura, SP. DenBaars, and JS. Speck, "High spatial uniformity of photoluminescence spectra in semipolar (20 2 1) plane InGaN/GaN quantum wells", Journal of Applied Physics, vol. 117, no. 2: AIP Publishing, pp. 023111, 2015.
Ivanov, R., S. Marcinkevičius, Y. Zhao, DL. Becerra, S. Nakamura, SP. DenBaars, and JS. Speck, "Impact of carrier localization on radiative recombination times in semipolar (20 2\= 1) plane InGaN/GaN quantum wells", Applied Physics Letters, vol. 107, no. 21: AIP Publishing, pp. 211109, 2015.
Piccardo, M., J. Iveland, L. Martinelli, S. Nakamura, J. Won Choi, J. S. Speck, C. Weisbuch, and J. Peretti, "Low-energy electro-and photo-emission spectroscopy of GaN materials and devices", Journal of Applied Physics, vol. 117, no. 11: AIP Publishing, pp. 112814, 2015.

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