Publications
Found 631 results
Author Title Type [ Year
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, "Growth and characterization of graded AlGaN conducting buffer layers on n+ SiC substrates", Journal of crystal growth, vol. 221, no. 1-4: North-Holland, pp. 301–304, 2000.
, "Hydrogen passivation of deep levels in n–GaN", Applied Physics Letters, vol. 77, no. 10: AIP, pp. 1499–1501, 2000.
, "Hydrogen passivation of deep levels in n–GaN", Applied Physics Letters, vol. 77, no. 10: AIP, pp. 1499–1501, 2000.
, "Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire", Applied Physics Letters, vol. 76, no. 5: AIP, pp. 529–531, 2000.
, "Improved characteristics of InGaN multi-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 5, no. S1: Cambridge University Press, pp. 8–13, 2000.
, "LASERS, OPTICS, AND OPTOELECTRONICS-Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire", Applied Physics Letters, vol. 76, no. 5: New York [etc.] American Institute of Physics., pp. 529–531, 2000.
, "Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 76, no. 6: AIP, pp. 718–720, 2000.
, "Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 76, no. 6: AIP, pp. 718–720, 2000.
, "Molecular beam epitaxy of InGaN/GaN heterostructures for green luminescence", Compound Semiconductors, 2000 IEEE International Symposium on: IEEE, pp. 371–376, 2000.
, "Molecular beam epitaxy of InGaN/GaN heterostructures for green luminescence", Compound Semiconductors, 2000 IEEE International Symposium on: IEEE, pp. 371–376, 2000.
, "Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes", Applied Physics Letters, vol. 76, no. 21: AIP, pp. 3064–3066, 2000.
, "Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes", Applied Physics Letters, vol. 76, no. 21: AIP, pp. 3064–3066, 2000.
, "Optimization of the Electron Mobilites in GaN Grown by Plasma-assisted Molecular Beam Epitaxy", Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series, 2000.
, "Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 77, no. 18: AIP, pp. 2885–2887, 2000.
, "Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure", MRS Online Proceedings Library Archive, vol. 639: Cambridge University Press, 2000.
, "Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure", Journal of Applied Physics, vol. 88, no. 11: AIP, pp. 6583–6588, 2000.
, "Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure", Journal of Applied Physics, vol. 88, no. 11: AIP, pp. 6583–6588, 2000.
, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)-Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 88, no. 4: New York, NY: American Institute of Physics, c1937-, pp. 1855–1860, 2000.
, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)-Control of GaN surface morphologies using plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 88, no. 4: New York, NY: American Institute of Physics, c1937-, pp. 1855–1860, 2000.
, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 76, no. 6: New York [etc.] American Institute of Physics., pp. 718–720, 2000.
, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-Mg doping of GaN layers grown by plasma-assisted molecular-beam epitaxy", Applied Physics Letters, vol. 76, no. 6: New York [etc.] American Institute of Physics., pp. 718–720, 2000.
, "Transmission electron microscopy studies of defects in HgCdTe device structures grown by molecular beam epitaxy", Journal of Electronic Materials, vol. 29, no. 6: Springer-Verlag, pp. 732–735, 2000.
, "Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers", Applied Physics Letters, vol. 77, no. 24: AIP, pp. 3998–4000, 2000.
, "Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers", Applied Physics Letters, vol. 77, no. 24: AIP, pp. 3998–4000, 2000.
, "1. Electronic and Optoelectronic Devices-1.1 Laser diodes-Effect of AlGaN/GaN Strained Layer Superlattice Period on InGaN MQW Laser Diodes", Physica Status Solidi-A-Applied Research, vol. 176, no. 1: Berlin: Akademie-Verlag,[1970]-c2004., pp. 59–62, 1999.