Publications

Found 548 results
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2014
Hardy, M. T., F. Wu, C-Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Impact of p-GaN thermal damage and barrier composition on semipolar green laser diodes", IEEE Photonics Technology Letters, vol. 26, no. 1: IEEE, pp. 43–46, 2014.
Hardy, M. T., F. Wu, C. Y. Huang, Y. Zhao, D. F. Feezell, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes", IEEE Photonics Technology Letters, vol. 26, pp. 43-46, Jan, 2014.
Farrell, R. M., M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, METHOD OF IMPROVING SURFACE MORPHOLOGY OF (Ga, Al, In, B) N THIN FILMS AND DEVICES GROWN ON NONPOLAR OR SEMIPOLAR (Ga, Al, In, B) N SUBSTRATES, 2014.
Farrell, R. M., M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method of improving surface morphology of (Ga, Al, In, B) N thin films and devices grown on nonpolar or semipolar (Ga, Al, In, B) N substrates, aug # " 5", 2014.
Holder, CO., JT. Leonard, RM. Farrell, DA. Cohen, B. Yonkee, JS. Speck, SP. DenBaars, S. Nakamura, and DF. Feezell, "Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching", Applied Physics Letters, vol. 105, no. 3: AIP, pp. 031111, 2014.
Holder, CO., JT. Leonard, RM. Farrell, DA. Cohen, B. Yonkee, JS. Speck, SP. DenBaars, S. Nakamura, and DF. Feezell, "Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching", Applied Physics Letters, vol. 105, no. 3: AIP, pp. 031111, 2014.
Feneberg, M., C. Lidig, K. Lange, R. Goldhahn, M. D. Neumann, N. Esser, O. Bierwagen, M. E. White, M. Y. Tsai, and J. S. Speck, "Ordinary and extraordinary dielectric functions of rutile SnO2 up to 20 eV", Applied Physics Letters, vol. 104, no. 23: AIP, pp. 231106, 2014.
Chung-Ta, HSU., C-Y. Huang, Y. Zhao, S-C. Haung, D. F. Feezell, S. P. DenBaars, S. Nakamura, and J. S. Speck, Pec etching of (20-2-1) semipolar gallium nitride for external efficiency enhancement in light emitting diode applications, 2014.
Keller, S., H. Li, M. Laurent, Y. Hu, N. Pfaff, J. Lu, D. F. Brown, N. A. Fichtenbaum, J. S. Speck, S. P. DenBaars, et al., "Recent progress in metal-organic chemical vapor deposition of N-polar group-III nitrides", Semiconductor Science and Technology, vol. 29, no. 11: IOP Publishing, pp. 113001, 2014.
Chen, J., E. Xia Zhang, C. Xuan Zhang, M. W. McCurdy, D. M. Fleetwood, R. D. Schrimpf, S. W. Kaun, E. C. H. Kyle, and J. S. Speck, "RF performance of proton-irradiated AlGaN/GaN HEMTs", IEEE Transactions on Nuclear Science, vol. 61, no. 6: IEEE, pp. 2959–2964, 2014.
Perl, E. E., W. E. McMahon, R. M. Farrell, S. P. DenBaars, J. S. Speck, and J. E. Bowers, "Surface structured optical coatings with near-perfect broadband and wide-angle antireflective properties", Nano letters, vol. 14, no. 10: ACS Publications, pp. 5960–5964, 2014.
Zhao, Y., R. M. Farrell, Y-R. Wu, and J. S. Speck, "Valence band states and polarized optical emission from nonpolar and semipolar III–nitride quantum well optoelectronic devices", Japanese Journal of Applied Physics, vol. 53, no. 10: IOP Publishing, pp. 100206, 2014.
Farahani, SK. Vasheghani, TD. Veal, JJ. Mudd, DO. Scanlon, GW. Watson, O. Bierwagen, ME. White, JS. Speck, and CF. McConville, "Valence-band density of states and surface electron accumulation in epitaxial SnO 2 films", Physical Review B, vol. 90, no. 15: American Physical Society, pp. 155413, 2014.
2013
Bryant, B. N., E. C. Young, F. Wu, K. Fujito, S. Nakamura, and J. S. Speck, "Basal Plane Stacking Fault Suppression by Nitrogen Carrier Gas in m-plane GaN Regrowth by Hydride Vapor Phase Epitaxy", Applied Physics Express, vol. 6, no. 11: IOP Publishing, pp. 115502, 2013.
Hsu, P. Shan, F. Wu, E. C. Young, A. E. Romanov, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Blue and aquamarine stress-relaxed semipolar (11 2\= 2) laser diodes", Applied Physics Letters, vol. 103, no. 16: AIP, pp. 161117, 2013.
Hsu, P. Shan, R. M. Farrell, J. J. Weaver, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Comparison of Polished and Dry Etched Semipolar $(11$\backslash$bar ${$2$}$ 2) $ III-Nitride Laser Facets", IEEE Photonics Technology Letters, vol. 25, no. 21: IEEE, pp. 2105–2107, 2013.
Hsu, P. Shan, R. M. Farrell, J. J. Weaver, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Comparison of Polished and Dry Etched Semipolar $(11$\backslash$bar ${$2$}$ 2) $ III-Nitride Laser Facets", IEEE Photonics Technology Letters, vol. 25, no. 21: IEEE, pp. 2105–2107, 2013.
Holder, C., D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Demonstration of nonpolar GaN-based vertical-cavity surface-emitting lasers", Vertical-Cavity Surface-Emitting Lasers XVII, vol. 8639: International Society for Optics and Photonics, pp. 863906, 2013.
Kawaguchi, Y., S-C. Huang, R. M. Farrell, Y. Zhao, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well III–nitride light-emitting diodes", Applied Physics Express, vol. 6, no. 5: IOP Publishing, pp. 052103, 2013.
DenBaars, S. P., D. Feezell, K. Kelchner, S. Pimputkar, C-C. Pan, C-C. Yen, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, et al., "Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays", Acta Materialia, vol. 61, no. 3: Pergamon, pp. 945–951, 2013.
DenBaars, S. P., D. Feezell, K. Kelchner, S. Pimputkar, C-C. Pan, C-C. Yen, S. Tanaka, Y. Zhao, N. Pfaff, R. Farrell, et al., "Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays", Acta Materialia, vol. 61, no. 3: Pergamon, pp. 945–951, 2013.
Farell, R. M., E. C. Young, F. Wu, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Development of high-performance nonpolar III-nitride light-emitting devices", Electronics, Communications and Photonics Conference (SIECPC), 2013 Saudi International: IEEE, pp. 1–8, 2013.
Farrell, RM., AA. Al-Heji, CJ. Neufeld, X. Chen, M. Iza, SC. Cruz, S. Keller, S. Nakamura, SP. DenBaars, UK. Mishra, et al., "Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells", Applied Physics Letters, vol. 103, no. 24: AIP, pp. 241104, 2013.
Kelchner, K. M., L. Y. Kuritzky, K. Fujito, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Emission characteristics of single InGaN quantum wells on misoriented nonpolar m-plane bulk GaN substrates", Journal of Crystal Growth, vol. 382: Elsevier, pp. 80–86, 2013.
Zhao, Y., S. Ho Oh, F. Wu, Y. Kawaguchi, S. Tanaka, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Green semipolar (2021) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth", Applied Physics Express, vol. 6, no. 6: IOP Publishing, pp. 062102, 2013.

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