Publications

Found 548 results
Author Title Type [ Year(Asc)]
Filters: First Letter Of Last Name is F  [Clear All Filters]
2006
Paskov, PP., R. Schifano, T. Malinauskas, T. Paskova, JP. Bergman, B. Monemar, S. Figge, D. Hommel, BA. Haskell, PT. Fini, et al., "Photoluminescence of a-plane GaN: comparison between MOCVD and HVPE grown layers", physica status solidi (c), vol. 3, no. 6: Wiley Online Library, pp. 1499–1502, 2006.
Paskov, PP., R. Schifano, T. Malinauskas, T. Paskova, JP. Bergman, B. Monemar, S. Figge, D. Hommel, BA. Haskell, PT. Fini, et al., "Photoluminescence of a-plane GaN: comparison between MOCVD and HVPE grown layers", physica status solidi (c), vol. 3, no. 6: Wiley Online Library, pp. 1499–1502, 2006.
Roder, C., S. Einfeldt, S. Figge, D. Hommel, T. Paskova, B. Monemar, BA. Haskell, PT. Fini, JS. Speck, and S. Nakamura, "Strain in a-plane GaN layers grown on r-plane sapphire substrates", physica status solidi (a), vol. 203, no. 7: Wiley Online Library, pp. 1672–1675, 2006.
Roder, C., S. Einfeldt, S. Figge, D. Hommel, T. Paskova, B. Monemar, BA. Haskell, PT. Fini, JS. Speck, and S. Nakamura, "Strain in a-plane GaN layers grown on r-plane sapphire substrates", physica status solidi (a), vol. 203, no. 7: Wiley Online Library, pp. 1672–1675, 2006.
Shen, L., T. Palacios, C. Poblenz, A. Corrion, A. Chakraborty, N. Fichtenbaum, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment", IEEE Electron Device Letters, vol. 27, no. 4: IEEE, pp. 214–216, 2006.
2005
Rajan, S., A. Chini, M. Wong, Y. Fu, F. Wu, JS. Speck, UK. Mishra, M. J. Grundmann, and C. Suh, Advanced Transistor Structures Based on N-face GaN , 2005.
Hashimoto, T., K. Fujito, M. Saito, J. S. Speck, and S. Nakamura, "Ammonothermal growth of GaN on an over-1-inch seed crystal", Japanese journal of applied physics, vol. 44, no. 12L: IOP Publishing, pp. L1570, 2005.
Baker, T. J., B. A. Haskell, F. Wu, P. T. Fini, J. S. Speck, and S. Nakamura, "Characterization of planar semipolar gallium nitride films on spinel substrates", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L920, 2005.
Baker, T. J., B. A. Haskell, F. Wu, P. T. Fini, J. S. Speck, and S. Nakamura, "Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates", Japanese Journal of Applied Physics, vol. 44, pp. L920, 2005.
Haskell, BA., TJ. Baker, MB. McLaurin, F. Wu, PT. Fini, SP. DenBaars, JS. Speck, and S. Nakamura, "Defect reduction in (1 1\= 00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy", Applied Physics Letters, vol. 86, no. 11: AIP, pp. 111917, 2005.
Sharma, R., PM. Pattison, H. Masui, RM. Farrell, TJ. Baker, BA. Haskell, F. Wu, SP. DenBaars, JS. Speck, and S. Nakamura, "Demonstration of a semipolar (101¯3¯) In Ga N/ Ga N green light emitting diode", Applied Physics Letters, vol. 87, no. 23: AIP, pp. 231110, 2005.
Chini, A., S. Rajan, M. Wong, Y. Fu, JS. Speck, and UK. Mishra, "Fabrication and Characterization of N-Face AlGaN/GaN/AlGaN HEMTs", Device Research Conference Digest, 2005. DRC'05. 63rd, vol. 1: IEEE, pp. 63–64, 2005.
Field, M., and C. Gallinat, "Fabrication of a Ferromagnetic Semiconductor Spin Bipolar Transistor", APS Meeting Abstracts, 2005.
Hashimoto, T., K. Fujino, F. Wu, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "GaN and Related Alloys", MRS Symposia, vol. 831, Pittsburgh, Materials Research Society, 2005.
Hashimoto, T., K. Fujino, F. Wu, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "GaN and Related Alloys", MRS Symposia, vol. 831, Pittsburgh, Materials Research Society, 2005.
Rajan, S., M. Wong, Y. Fu, F. Wu, JS. Speck, and UK. Mishra, "Growth and electrical characterization of N-face AlGaN/GaN heterostructures", Japanese journal of applied physics, vol. 44, no. 11L: IOP Publishing, pp. L1478, 2005.
Hashimoto, T., K. Fujito, K. Samonji, J. S. Speck, and S. Nakamura, "Growth of AlN by the chemical vapor reaction process", Japanese journal of applied physics, vol. 44, no. 2R: IOP Publishing, pp. 869, 2005.
Hashimoto, T., K. Fujito, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "Growth of gallium nitride via fluid transport in supercritical ammonia", Journal of Crystal Growth, vol. 275, no. 1-2: North-Holland, pp. e525–e530, 2005.
Hashimoto, T., K. Fujito, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "Growth of gallium nitride via fluid transport in supercritical ammonia", Journal of Crystal Growth, vol. 275, no. 1-2: North-Holland, pp. e525–e530, 2005.
Haskell, B. A., A. Chakraborty, F. Wu, H. Sasano, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy", Journal of electronic materials, vol. 34, no. 4: Springer-Verlag, pp. 357–360, 2005.
Farag, N., M. Bobeth, W. Pompe, AE. Romanov, and JS. Speck, "Modeling of twinning in epitaxial (001)-oriented La 0.67 Sr 0.33 MnO 3 thin films", Journal of applied physics, vol. 97, no. 11: AIP, pp. 113516, 2005.
Farag, N., M. Bobeth, W. Pompe, AE. Romanov, and JS. Speck, "Rhombohedral LSMO films–a unique case of ferroelastic domain formation", physica status solidi (a), vol. 202, no. 4: WILEY-VCH Verlag, 2005.
Ueda, O., H. Amano, S. Fujita, K. Kishino, K. Hiramatsu, M. Kawasaki, S. Chichibu, S. Niki, H. Hirayama, J. Speck, et al., Selected topics in applied physics III-Physics of UV materials and devices and their applications: JAPAN SOC APPLIED PHYSICS KUDAN-KITA BUILDING 5TH FLOOR, 1-12-3 KUDAN-KITA, CHIYODA-KU, TOKYO, 102-0073, JAPAN, 2005.
Sharma, R., M. P Pattison, T. J. Baker, B. A. Haskell, R. M. Farrell, H. Masui, F. Wu, S. P. DenBaars, J. S. Speck, and S. Nakamura, "A semipolar (10-1-3) InGaN/GaN green light emitting diode", MRS Online Proceedings Library Archive, vol. 892: Cambridge University Press, 2005.
Hashimoto, T., K. Fujito, F. Wu, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "Structural characterization of thick GaN films grown on free-standing GaN seeds by the ammonothermal method using basic ammonia", Japanese journal of applied physics, vol. 44, no. 6L: IOP Publishing, pp. L797, 2005.

Pages