Publications
Found 106 results
Author Title Type [ Year
] Filters: First Letter Of Last Name is E [Clear All Filters]
, "Optimization of the Electron Mobilites in GaN Grown by Plasma-assisted Molecular Beam Epitaxy", Proc. Int. Workshop on Nitride Semiconductors, IPAP Conf. Series, 2000.
, "Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 77, no. 18: AIP, pp. 2885–2887, 2000.
, "Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure", MRS Online Proceedings Library Archive, vol. 639: Cambridge University Press, 2000.
, "Persistent Photoconductivity in a High Mobility two Dimensional Electron Gas in an AlGaN/GaN Heterostructure", MRS Online Proceedings Library Archive, vol. 639: Cambridge University Press, 2000.
, "Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure", Journal of Applied Physics, vol. 88, no. 11: AIP, pp. 6583–6588, 2000.
, "Persistent photoconductivity study in a high mobility AlGaN/GaN heterostructure", Journal of Applied Physics, vol. 88, no. 11: AIP, pp. 6583–6588, 2000.
, "Step bunching on the vicinal GaN (0001) surface", Physical Review B, vol. 62, no. 16: APS, pp. R10661, 2000.
, Transition between the 1 x 1 and (${$radical$}$ 3 x 2 ${$radical$}$ 3) R30 ${$degree$}$ surface structures of GaN in the vapor-phase environment: Argonne National Laboratory, Argonne, IL (US), 2000.
, "Transition between the 1$\times$ 1 and (3$\times$ 23) R30∞ surface structures of GaN in the vapor-phase environment", Physica B: Condensed Matter, vol. 283, no. 1-3: North-Holland, pp. 217–222, 2000.
, "Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers", Applied Physics Letters, vol. 77, no. 24: AIP, pp. 3998–4000, 2000.
, "Dislocation mediated surface morphology of GaN", Journal of Applied Physics, vol. 85, no. 9: AIP, pp. 6470–6476, 1999.
, "ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)-Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy", Journal of Applied Physics, vol. 86, no. 8: New York, NY: American Institute of Physics, c1937-, pp. 4520–4526, 1999.
, "High electron mobility 2DEG in AlGaN/GaN structures", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1028–1029, 1999.
, "High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 74, no. 23: AIP, pp. 3528–3530, 1999.
, "IN SITU SYNCHROTRON RADIATION RESEARCH IN MATERIALS SCIENCE-Real-Time X-Ray Scattering Studies of Surface Structure During Metalorganic Chemical Vapor Deposition of GaN", MRS Bulletin-Materials Research Society, vol. 24, no. 1: [Pittsburgh, PA]: The Society, pp. 21–25, 1999.
, "Observation of growth modes during metal-organic chemical vapor deposition of GaN", Applied physics letters, vol. 74, no. 22: AIP, pp. 3326–3328, 1999.
, "Optimization of high quality GaN by MBE", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1065, 1999.
, "Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy", Journal of applied physics, vol. 86, no. 8: AIP, pp. 4520–4526, 1999.
, "Real-time X-ray scattering studies of surface structure during metalorganic chemical vapor deposition of GaN", MRS Bulletin, vol. 24, no. 1: Cambridge University Press, pp. 21–25, 1999.
, "Surface structure of GaN (0001) in the chemical vapor deposition environment", Physical review letters, vol. 83, no. 4: APS, pp. 741, 1999.
, "Cubic and Hexagonal Fractions in GaN Nucleation Layers Measured Using Grazing Incidence X-Ray Scattering", APS March Meeting Abstracts, 1998.
, "Determination of the cubic to hexagonal fraction in GaN nucleation layers using grazing incidence x-ray scattering", Applied physics letters, vol. 72, no. 23: AIP, pp. 2972–2974, 1998.
, "Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition", Applied physics letters, vol. 72, no. 18: AIP, pp. 2247–2249, 1998.
, "Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells", Applied Physics Letters, vol. 72, no. 6: AIP, pp. 692–694, 1998.
, Epitaxial oxide thin films 3. Materials Research Society symposium proceedings Volume 474: Materials Research Society, Warrendale, PA (US), 1997.