Publications

Found 853 results
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1998
Mack, MP., GD. Via, AC. Abare, M. Hansen, PK. Kozodoy, S. Keller, JS. Speck, UK. Mishra, LA. Coldren, and SP. DenBaars, "Improvement of GaN-based laser diode facets by FIB polishing", Electronics Letters, vol. 34, no. 13: IET, pp. 1315–1316, 1998.
Abare, AC., MP. Mack, M. Hansen, JS. Speck, LA. Coldren, SP. DenBaars, GA. Meyer, SL. Lehew, and GA. Cooper, "Measurement of gain current relations for InGaN multiple quantum wells", Applied physics letters, vol. 73, no. 26: AIP, pp. 3887–3889, 1998.
Marchand, H., JP. Ibbetson, PT. Fini, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition", Journal of Crystal Growth, vol. 195, no. 1-4: North-Holland, pp. 328–332, 1998.
Speck, JS., H. Marchand, P. Kozodoy, PT. Fini, XH. Wu, JP. Ibbetson, S. Keller, SP. DenBaars, UK. Mishra, and SJ. Rosner, "Microstructure and Electronic Properties of GaN Laterally Overgrown by Metal Organic Chemical Vapor Deposition", Blue Laser and Light Emitting Diodes II: Ohmsha, pp. 37, 1998.
Marchand, H., XH. Wu, JP. Ibbetson, P. T. Fini, P. Kozodoy, S. Keller, JS. Speck, SP. DenBaars, and UK. Mishra, "Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition", Applied physics letters, vol. 73, no. 6: AIP, pp. 747–749, 1998.
DenBaars, S. P., J. S. Speck, C. H. Church, R. G. Wilson, and J. M. Zavada, Miniature self-pumped monolithically integrated solid state laser, 1998.
Keller, S., F. Cabané, MS. Minsky, X. Hui Wu, MP. Mack, J. S. Speck, E. Hu, LA. Coldren, U. K. Mishra, and S. P. DenBaars, "MOCVD growth and properties of InGaN/GaN multi-quantum wells", Materials Science Forum, vol. 264: Trans Tech Publications, pp. 1157–1160, 1998.
Mack, MP., DK. Young, AC. Abare, M. Hansen, LA. Coldren, JS. Speck, EL. Hu, DD. Awschalom, and SP. DenBaars, "Observation of near field modal emission in InGaN multi-quantum well laser diodes by near field scanning optical microscopy", Semiconductor Laser Conference, 1998. ISLC 1998 NARA. 1998 IEEE 16th International: IEEE, pp. 9–10, 1998.
Asamizu, H., M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "r here has been significant development of c-plane", MRS Internet J. Nitride Semicond. Res, vol. 3, pp. 15, 1998.
Hansen, PJ., YE. Strausser, AN. Erickson, EJ. Tarsa, P. Kozodoy, EG. Brazel, JP. Ibbetson, U. Mishra, V. Narayanamurti, SP. DenBaars, et al., "Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition", Applied physics letters, vol. 72, no. 18: AIP, pp. 2247–2249, 1998.
Wu, XH., CR. Elsass, A. Abare, M. Mack, S. Keller, PM. Petroff, SP. DenBaars, JS. Speck, and SJ. Rosner, "Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells", Applied Physics Letters, vol. 72, no. 6: AIP, pp. 692–694, 1998.
Fini, P., X. Wu, EJ. Tarsa, Y. Golan, V. Srikant, S. Keller, SP. DenBaars, and JS. Speck, "Structure and Mechanical and Thermal Properties of Condensed Matter-The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor", Japanese Journal of Applied Physics-Part 1 Regular Papers and Short Notes, vol. 37, no. 8: Tokyo, Japan: Publication Board, Japanese Journal of Applied Physics, c1982-, pp. 4460–4466, 1998.
Golan, Y., P. Fini, SP. DenBaars, and JS. Speck, "Substrate reactivity and" controlled contamination" in MOCVD grown gallium nitride on sapphire.", ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, vol. 216: AMER CHEMICAL SOC 1155 16TH ST, NW, WASHINGTON, DC 20036 USA, pp. U188–U188, 1998.
Golan, Y., P. Fini, S. P. DenBaars, and J. S. Speck, "Substrate Reactivity and ìControlled Contaminationî in Metalorganic Chemical Vapor Deposition of GaN on Sapphire", Japanese journal of applied physics, vol. 37, no. 9R: IOP Publishing, pp. 4695, 1998.
1997
DenBaars, S. P., and J. S. Speck, Defect reduction in the growth of group III nitrides, 1997.
Derouin, TA., CDE. Lakeman, XH. Wu, JS. Speck, and FF. Lange, "Effect of lattice mismatch on the epitaxy of sol-gel LiNbO 3 thin films", Journal of materials research, vol. 12, no. 5: Cambridge University Press, pp. 1391–1400, 1997.
Tarsa, EJ., B. Heying, XH. Wu, P. Fini, SP. DenBaars, and JS. Speck, "Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy", Journal of applied physics, vol. 82, no. 11: AIP, pp. 5472–5479, 1997.
Docter, DP., JJ. Brown, M. Hu, M. Matloubian, J. Speck, X. Wu, and DE. Grider, "InzAl1- zAs/InyGa1- yAs lattice constant engineered HEMTs on GaAs", Solid-State Electronics, vol. 41, no. 10: Pergamon, pp. 1629–1634, 1997.
Sung, T., G. Popovici, MA. Prelas, RG. Wilson, SK. Loyalka, T. Lou, G. Fan, B. Ding, Z. Hu, AT. Chien, et al., "JMR Abstracts", MRS BULLETIN, pp. 85, 1997.
DenBaars, SP., P. Kozodoy, S. Keller, MP. Mack, A. Abare, X. Wu, JS. Speck, and UK. Mishra, "MOCVD Growth of Group-III Nitrides for High Quality Photonic Devices", OPTOELECTRONICS & COMMUNICATIONS CONFERENCE, vol. 2, pp. 48–49, 1997.
Golan, Y., P. Fini, S. P. DenBaars, and J. S. Speck, "Substrate Surface Treatments and Controlled Contamination in GaN/Sapphire MOCVD", MRS Online Proceedings Library Archive, vol. 482: Cambridge University Press, 1997.
1996
Sink, RK., S. Keller, BP. Keller, DI. Babić, AL. Holmes, D. Kapolnek, XH. Wu, JS. Speck, SP. DenBaars, and JE. Bowers, "Cleaved facets in GaN by wafer fusion of GaN to InP", MRS Online Proceedings Library Archive, vol. 421: Cambridge University Press, 1996.
Sink, RK., S. Keller, BP. Keller, D. I. Babić, AL. Holmes, D. Kapolnek, SP. DenBaars, JE. Bowers, XH. Wu, and JS. Speck, "Cleaved GaN facets by wafer fusion of GaN to InP", Applied physics letters, vol. 68, no. 15: AIP, pp. 2147–2149, 1996.
Wu, XH., LM. Brown, D. Kapolnek, S. Keller, B. Keller, SP. DenBaars, and JS. Speck, "Defect structure of metal-organic chemical vapor deposition-grown epitaxial (0001) GaN/Al2O3", Journal of applied physics, vol. 80, no. 6: AIP, pp. 3228–3237, 1996.
Wu, X. H., L. M. Brown, D. Kapolnek, S. Keller, B. Keller, S. DenBaars, and J. Speck, "Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3", Journal of Applied Physics, vol. 80, pp. 3228 - 3237, 10, 1996.

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