Publications

Found 1602 results
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2008
Schaake, C. A., N. A. Fichtenbaum, C. J. Neufeld, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "M-plane InGaN/GaN light emitting diodes fabricated by MOCVD regrowth on c-plane patterned templates", physica status solidi (c), vol. 5, no. 9: Wiley Online Library, pp. 2963–2965, 2008.
Fehlberg, T. B., G. Koblmüller, G. A. Umana-Membreno, C. S. Gallinat, B. D. Nener, J. S. Speck, and G. Parish, "Multiple carrier transport in N-face indium nitride", physica status solidi (b), vol. 245, no. 5: Wiley Online Library, pp. 907–909, 2008.
Wong, M. Hoi, Y. Pei, R. Chu, S. Rajan, B. L. Swenson, D. F. Brown, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "N-face metal–insulator–semiconductor high-electron-mobility transistors with AlN back-barrier", IEEE Electron Device Letters, vol. 29, no. 10: IEEE, pp. 1101–1104, 2008.
Wraback, M., GA. Garrett, GD. Metcalfe, H. Shen, MC. Schmidt, A. Hirai, JS. Speck, SP. DenBaars, and S. Nakamura, Nonpolar Nitride Semiconductor Optoelectronic Devices: A Disruptive Technology for Next Generation Army Applications: DTIC Document, 2008.
Masui, H., H. Yamada, K. Iso, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Non-polar-oriented InGaN light-emitting diodes for liquid-crystal-display backlighting", Journal of the Society for Information Display, vol. 16, no. 4: Wiley Online Library, pp. 571–578, 2008.
Masui, H., H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Optical polarization of m-plane In-GaN/GaN light-emitting diodes characterized via confocal microscope", physica status solidi (a), vol. 205, no. 5: Wiley Online Library, pp. 1203–1206, 2008.
Sato, H., R. B. Chung, H. Hirasawa, N. Fellows, H. Masui, F. Wu, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, et al., "Optical properties of yellow light-emitting diodes grown on semipolar (11 2 2) bulk GaN substrates", Applied Physics Letters, vol. 92, no. 22: AIP, pp. 221110, 2008.
Yamanaka, T., D. Alexson, M. A. Stroscio, M. Dutta, P. Petroff, J. Brown, and J. Speck, "Phonon modes in self-assembled GaN quantum dots", Journal of Applied Physics, vol. 104, no. 9: AIP, pp. 093512, 2008.
Zhong, H., A. Tyagi, JS. Speck, and S. Nakamura, "Piezoelectric Field in Semi-Polar InGaN/GaN Quantum Wells H. Shen, GA Garrett, and M. Wraback US Army Research Laboratory 2800 Powder Mill Road, Adelphi, MD 20783", Phys. Lett, vol. 92, pp. 221110, 2008.
Saito, M., D. S. Kamber, T. J. Baker, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Plane Dependent Growth of GaN in Supercritical Basic Ammonia", Applied physics express, vol. 1, no. 12: IOP Publishing, pp. 121103, 2008.
White, ME., MY. Tsai, F. Wu, and JS. Speck, "Plasma-assisted molecular beam epitaxy and characterization of Sn O 2 (101) on r-plane sapphire", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 26, no. 5: AVS, pp. 1300–1307, 2008.
Tsai, MY., ME. White, and JS. Speck, "Plasma-assisted molecular beam epitaxy of SnO2 on TiO2", Journal of Crystal Growth, vol. 310, no. 18: North-Holland, pp. 4256–4261, 2008.
Wong, M. Hoi, F. Wu, T. E. Mates, J. S. Speck, and U. K. Mishra, "Polarity inversion of N-face GaN by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 104, no. 9: AIP, pp. 093710, 2008.
Wong, M. Hoi, Y. Pei, R. Chu, S. Rajan, B. L. Swenson, D. F. Brown, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier", Device Research Conference, 2008: IEEE, pp. 201–202, 2008.
Nakamura, S., U. Mishra, S. DenBaars, J. S. Speck, M. Wraback, Y. Arakawa, A. Allerman, N. Grandjean, J. Shealy, M. Krames, et al., "Preface: phys. stat. sol.(c) 5/6", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 1472–1474, 2008.
Keller, S., CS. Suh, Z. Chen, R. Chu, S. Rajan, NA. Fichtenbaum, M. Furukawa, SP. DenBaars, JS. Speck, and UK. Mishra, "Properties of N-polar AlGaN/GaN heterostructures and field effect transistors grown by metalorganic chemical vapor deposition", Journal of Applied Physics, vol. 103, no. 3: AIP, pp. 033708, 2008.
Ive, T., T. Ben-Yaacov, H. Asamizu, CG. Van de Walle, U. Mishra, SP. DenBaars, and JS. Speck, "Properties of ZnO (0001) layers grown by metalorganic chemical vapor deposition on GaN (0001) templates", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 1733–1735, 2008.
Chu, R., C. Poblenz, M. Hoi Wong, S. Dasgupta, S. Rajan, Y. Pei, F. Recht, L. Shen, J. S. Speck, and U. K. Mishra, "Semiconductor, superconductor, spintronic, dielectric, and organic materials-Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF4-Treatment", Applied Physics Express, vol. 1, no. 6, pp. 61101, 2008.
Hashimoto, T., F. Wu, M. Saito, K. Fujito, J. S. Speck, and S. Nakamura, "Status and perspectives of the ammonothermal growth of GaN substrates", Journal of Crystal Growth, vol. 310, no. 5: Elsevier, pp. 876–880, 2008.
Ive, T., T. Ben-Yaacov, CG. Van de Walle, UK. Mishra, SP. DenBaars, and JS. Speck, "Step-flow growth of ZnO (0 0 0 1) on GaN (0 0 0 1) by metalorganic chemical vapor epitaxy", Journal of Crystal Growth, vol. 310, no. 15: North-Holland, pp. 3407–3412, 2008.
Tyagi, A., Y-. Da Lin, D. A. Cohen, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Stimulated emission at blue-green (480 nm) and green (514 nm) wavelengths from nonpolar (m-plane) and semipolar (1122) InGaN multiple quantum well laser diode structures", Applied physics express, vol. 1, no. 9: IOP Publishing, pp. 091103, 2008.
Corrion, AL., C. Poblenz, F. Wu, and JS. Speck, "Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors", Journal of Applied Physics, vol. 103, no. 9: AIP, pp. 093529, 2008.
Nidhi, S. Rajan, S. Keller, F. Wu, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Study of interface barrier of SiN x/GaN interface for nitrogen-polar GaN based high electron mobility transistors", Journal of Applied Physics, vol. 103, no. 12: AIP, pp. 124508, 2008.
Choi, Y-S., M. Iza, E. Matioli, G. Koblmüller, J. S. Speck, C. Weisbuch, and E. L. Hu, "Submicron-thick microcavity InGaN light emitting diodes", Light-Emitting Diodes: Research, Manufacturing, and Applications XII, vol. 6910: International Society for Optics and Photonics, pp. 69100R, 2008.
Choi, Y., M. Iza, E. Matioli, G. Koblmüller, JS. Speck, C. Weisbuch, and EL. Hu, "Submicron-thick microcavity InGaN light emitting diodes [6910-27]", PROCEEDINGS-SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, vol. 6910: International Society for Optical Engineering; 1999, pp. 6910, 2008.

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