Publications
Found 647 results
Author Title Type [ Year
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, "Polarity determination of a-plane GaN on r-plane sapphire and its effects on lateral overgrowth and heteroepitaxy", Journal of Applied Physics, vol. 94, pp. 942-947, 2003.
, "Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures", Journal of applied physics, vol. 93, no. 12: AIP, pp. 10114–10118, 2003.
, "RAPID COMMUNICATIONS-Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Nonpolar InxGa1-xN/GaN (1100) multiple quantum wells grown on g-LiAlO2 (100) by plasma-assisted", Physical Review-Section B-Condensed Matter, vol. 67, no. 4: Woodbury, NY: published by the American Physical Society through the American Institute of Physics, c1998-, pp. 41306R, 2003.
, "Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment", Applied physics letters, vol. 82, no. 8: AIP, pp. 1293–1295, 2003.
, "Si doping effect on strain reduction in compressively strained Al 0.49 Ga 0.51 N thin films", Applied physics letters, vol. 83, no. 4: AIP, pp. 674–676, 2003.
, "Si doping effect on strain reduction in compressively strained Al 0.49 Ga 0.51 N thin films", Applied physics letters, vol. 83, no. 4: AIP, pp. 674–676, 2003.
, "Si doping effects on the electrical and structural properties of high Al composition AlxGa1- xN films grown by MOCVD", physica status solidi (c), no. 7: Wiley Online Library, pp. 2010–2013, 2003.
, "Si doping effects on the electrical and structural properties of high Al composition AlxGa1- xN films grown by MOCVD", physica status solidi (c), no. 7: Wiley Online Library, pp. 2010–2013, 2003.
, "Structural and electrical characterization of a-plane GaN grown on a-plane SiC", physica status solidi (c), no. 7: Wiley Online Library, pp. 2132–2135, 2003.
, "Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy", Applied Physics Letters, vol. 83, no. 8: AIP, pp. 1554–1556, 2003.
, "Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)", Materials Science and Engineering: B, vol. 93, no. 1-3: Elsevier, pp. 39–48, 2002.
, "Distinguishing negatively-charged and highly conductive dislocations in gallium nitride using scanning Kelvin probe and conductive atomic force microscopy", MRS Online Proceedings Library Archive, vol. 743: Cambridge University Press, 2002.
, "Electronic properties of GaN induced by a subsurface stressor", Applied physics letters, vol. 81, no. 25: AIP, pp. 4754–4756, 2002.
, "Extended abstracts of the... Conference on Solid State Devices and Materials 2005, 712-713, 2005-09-13", Appl. Phys. Lett, vol. 80, pp. 2198, 2002.
, "Extended abstracts of the... Conference on Solid State Devices and Materials 2005, 712-713, 2005-09-13", Appl. Phys. Lett, vol. 80, pp. 2198, 2002.
, "Heteroepitaxial Growth of GaN on 6H-SiC (0001) by Plasma-Assisted Molecular Beam Epitaxy", physica status solidi (a), vol. 194, no. 2: WILEY-VCH Verlag Berlin, pp. 524–527, 2002.
, "Investigation of the piezoelectric polarization in (In, Ga) N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy", Journal of applied physics, vol. 92, no. 1: AIP, pp. 456–460, 2002.
, "Nonpolar (11&1macr; 0) a-Plane Gallium Nitride Thin Films Grown on (1&1macr; 02) r-Plane Sapphire: Heteroepitaxy and Lateral Overgrowth", physica status solidi (a), vol. 194, no. 2: WILEY-VCH Verlag Berlin, pp. 541–544, 2002.
, "Structural characterization of nonpolar (1120) a-plane GaN thin films grown on (1102) r-plane sapphire", Applied Physics Letters, vol. 81, no. 3: AIP, pp. 469–471, 2002.
, "Threading dislocation reduction via laterally overgrown nonpolar (1120) a-plane GaN", Applied Physics Letters, vol. 81, no. 7: AIP, pp. 1201–1203, 2002.
, "Impact of In content on the structural and optical properties of (In, Ga) N/GaN multiple quantum wells grown by plasma-assisted molecular beam epitaxy", MRS Online Proceedings Library Archive, vol. 693: Cambridge University Press, 2001.
, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part A. 1)-GaN-based transistors-AlGaN/GaN HEMT Optimization", Physica Status Solidi-A-Applied Research, vol. 188, no. 1: Berlin: Akademie-Verlag,[1970]-c2004., pp. 199–202, 2001.
, "Relation between Structural Parameters and the Effective Electron–Hole Separation in InGaN/GaN Quantum Wells", physica status solidi (b), vol. 228, no. 1: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 147–151, 2001.
, "Relation between Structural Parameters and the Effective Electron–Hole Separation in InGaN/GaN Quantum Wells", physica status solidi (b), vol. 228, no. 1: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 147–151, 2001.
, "Erratum:ìMorphology and microstructural evolution in the early stages of hydride vapor phase epitaxy of GaN on sapphireî[Appl. Phys. Lett. 73, 3090 (1998)]", Applied Physics Letters, vol. 74, no. 10: AIP, pp. 1498–1498, 1999.