Publications

Found 2112 results
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2002
Amano, H., E. Calleja, J. Christen, M. Kamp, P. Lefebvre, J. Speck, and T. Suski, "Proceedings Symposium H," GaN & Related Compounds". E-MRS Spring Meeting.", E-MRS Spring Meeting. Symposium H," GaN & Related Compounds"., vol. 93, no. 1-3: Elsevier Science BV, pp. 1–245, 2002.
Jena, D., S. Heikman, D. Green, D. Buttari, R. Coffie, H. Xing, S. Keller, S. DenBaars, J. S. Speck, U. K. Mishra, et al., "Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys", Applied Physics Letters, vol. 81, no. 23: AIP, pp. 4395–4397, 2002.
Miller, EJ., DM. Schaadt, ET. Yu, C. Poblenz, C. Elsass, and JS. Speck, "Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope", Journal of applied physics, vol. 91, no. 12: AIP, pp. 9821–9826, 2002.
Miller, EJ., DM. Schaadt, ET. Yu, C. Poblenz, C. Elsass, and JS. Speck, "Reduction of reverse-bias leakage current in Schottky diodes on GaN grown by molecular-beam epitaxy using surface modification with an atomic force microscope", Journal of applied physics, vol. 91, no. 12: AIP, pp. 9821–9826, 2002.
Haus, E., IP. Smorchkova, B. Heying, P. Fini, C. Poblenz, T. Mates, UK. Mishra, and JS. Speck, "The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 246, no. 1-2: North-Holland, pp. 55–63, 2002.
Haus, E., IP. Smorchkova, B. Heying, P. Fini, C. Poblenz, T. Mates, UK. Mishra, and JS. Speck, "The role of growth conditions on the p-doping of GaN by plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 246, no. 1-2: North-Holland, pp. 55–63, 2002.
Gerardot, BD., G. Subramanian, S. Minvielle, H. Lee, JA. Johnson, WV. Schoenfeld, D. Pine, JS. Speck, and PM. Petroff, "Self-assembling quantum dot lattices through nucleation site engineering", Journal of crystal growth, vol. 236, no. 4: North-Holland, pp. 647–654, 2002.
Gerardot, BD., G. Subramanian, S. Minvielle, H. Lee, JA. Johnson, WV. Schoenfeld, D. Pine, JS. Speck, and PM. Petroff, "Self-assembling quantum dot lattices through nucleation site engineering", Journal of crystal growth, vol. 236, no. 4: North-Holland, pp. 647–654, 2002.
Gerardot, BD., G. Subramanian, S. Minvielle, H. Lee, JA. Johnson, WV. Schoenfeld, D. Pine, JS. Speck, and PM. Petroff, "Self-assembling quantum dot lattices through nucleation site engineering", Journal of crystal growth, vol. 236, no. 4: North-Holland, pp. 647–654, 2002.
McCarthy, LS., IP. Smorchkova, P. Fini, MJW. Rodwell, J. Speck, SP. DenBaars, and UK. Mishra, "Small signal RF performance of AlGaN/GaN heterojunction bipolar transistors", Electronics Letters, vol. 38, no. 3: IET Digital Library, pp. 144–145, 2002.
McCarthy, LS., IP. Smorchkova, P. Fini, MJW. Rodwell, J. Speck, SP. DenBaars, and UK. Mishra, "Small signal RF performance of AlGaN/GaN heterojunction bipolar transistors", Electronics Letters, vol. 38, no. 3: IET Digital Library, pp. 144–145, 2002.
Amano, H., E. Calleja, J. Christen, M. Kamp, P. Lefebvre, J. Speck, and T. Suski, Special issue: Containing papers presented at the European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium H: GaN and Related Compounds, Strasbourg, France, June 4-8 2001-Preface: ELSEVIER SCIENCE SA PO BOX 564, 1001 LAUSANNE, SWITZERLAND, 2002.
Amano, H., E. Calleja, J. Christen, M. Kamp, P. Lefebvre, J. Speck, and T. Suski, Special issue: Containing papers presented at the European Materials Research Society (E-MRS) 2001, Spring Meeting, Symposium H: GaN and Related Compounds, Strasbourg, France, June 4-8 2001-Preface: ELSEVIER SCIENCE SA PO BOX 564, 1001 LAUSANNE, SWITZERLAND, 2002.
Craven, MD., SH. Lim, F. Wu, JS. Speck, and SP. DenBaars, "Structural characterization of nonpolar (1120) a-plane GaN thin films grown on (1102) r-plane sapphire", Applied Physics Letters, vol. 81, no. 3: AIP, pp. 469–471, 2002.
Craven, MD., SH. Lim, F. Wu, JS. Speck, and SP. DenBaars, "Threading dislocation reduction via laterally overgrown nonpolar (1120) a-plane GaN", Applied Physics Letters, vol. 81, no. 7: AIP, pp. 1201–1203, 2002.
Link, A., T. Graf, O. Ambacher, A. Jimenez, E. Calleja, Y. Smorchkova, J. Speck, U. Mishra, and M. Stutzmann, "Transport properties of 2DEGs in AlGaN/GaN heterostructures: Spin splitting and occupation of higher subbands", physica status solidi (b), vol. 234, no. 3: WILEY-VCH Verlag Berlin, pp. 805–809, 2002.
Link, A., T. Graf, O. Ambacher, A. Jimenez, E. Calleja, Y. Smorchkova, J. Speck, U. Mishra, and M. Stutzmann, "Transport properties of 2DEGs in AlGaN/GaN heterostructures: Spin splitting and occupation of higher subbands", physica status solidi (b), vol. 234, no. 3: WILEY-VCH Verlag Berlin, pp. 805–809, 2002.
Link, A., T. Graf, O. Ambacher, A. Jimenez, E. Calleja, Y. Smorchkova, J. Speck, U. Mishra, and M. Stutzmann, "Transport properties of 2DEGs in AlGaN/GaN heterostructures: Spin splitting and occupation of higher subbands", physica status solidi (b), vol. 234, no. 3: WILEY-VCH Verlag Berlin, pp. 805–809, 2002.
Serraiocco, J., B. Acikel, P. Hansen, T. Taylor, H. Xu, JS. Speck, and RA. York, "Tunable passive integrated circuits using BST thin films", Integrated Ferroelectrics, vol. 49, no. 1: Taylor & Francis, pp. 161–170, 2002.
Serraiocco, J., B. Acikel, P. Hansen, T. Taylor, H. Xu, JS. Speck, and RA. York, "Tunable passive integrated circuits using BST thin films", Integrated Ferroelectrics, vol. 49, no. 1: Taylor & Francis, pp. 161–170, 2002.
2001
Smorchkova, IP., L. Chen, T. Mates, L. Shen, S. Heikman, B. Moran, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "AlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy", Journal of Applied Physics, vol. 90, no. 10: AIP, pp. 5196–5201, 2001.
Smorchkova, IP., L. Chen, T. Mates, L. Shen, S. Heikman, B. Moran, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "AlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy", Journal of Applied Physics, vol. 90, no. 10: AIP, pp. 5196–5201, 2001.
Smorchkova, IP., L. Chen, T. Mates, L. Shen, S. Heikman, B. Moran, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "AlN/GaN and (Al, Ga) N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy", Journal of Applied Physics, vol. 90, no. 10: AIP, pp. 5196–5201, 2001.
Ding, Y., H-J. Im, JP. Pelz, B. Heying, and JS. Speck, "Ballistic Electron Emission Microscopy Study of Individual Threading Dislocations in GaN", APS Meeting Abstracts, 2001.
Hierro, A., AR. Arehart, B. Heying, M. Hansen, JS. Speck, UK. Mishra, SP. DenBaars, and SA. Ringel, "Capture Kinetics of Electron Traps in MBE-Grown n-GaN", physica status solidi (b), vol. 228, no. 1: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 309–313, 2001.

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