Publications

Found 2112 results
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2012
Bierwagen, O., S. Choi, and J. S. Speck, "Hall and Seebeck measurement of a p-n layer stack: Determining InN bulk hole transport properties in the presence of a strong surface electron accumulation layer", Physical Review B, vol. 85, no. 16: APS, pp. 165205, 2012.
Speck, J. S., "Heteroepitaxial Lattice Mismatch Stress Relaxation in Nonpolar and Semipolar GaN by Dislocation Glide", Meeting Abstracts, no. 43: The Electrochemical Society, pp. 3202–3202, 2012.
Das, NC., ML. Reed, AV. Sampath, H. Shen, M. Wraback, RM. Farrell, M. Iza, SC. Cruz, , NG. Young, et al., "Heterogeneous integration of InGaN and Silicon solar cells for enhanced energy harvesting", Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE: IEEE, pp. 003076–003079, 2012.
Das, NC., ML. Reed, AV. Sampath, H. Shen, M. Wraback, RM. Farrell, M. Iza, SC. Cruz, , NG. Young, et al., "Heterogeneous integration of InGaN and Silicon solar cells for enhanced energy harvesting", Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE: IEEE, pp. 003076–003079, 2012.
Zhao, Y., S. Tanaka, C-Y. Huang, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, High indium uptake and high polarization ratio for group-iii nitride optoelectronic devices fabricated on a semipolar (20-2-1) plane of a gallium nitride substrate, 2012.
Speck, J. S., S. P. DenBaars, U. K. Mishra, and S. Nakamura, High Performance InGaN-Based Solar Cells: DTIC Document, 2012.
Matioli, E., S. Brinkley, K. M. Kelchner, Y-L. Hu, S. Nakamura, S. DenBaars, J. Speck, and C. Weisbuch, "High-brightness polarized light-emitting diodes", Light: Science & Applications, vol. 1, no. 8: Nature Publishing Group, pp. e22, 2012.
Pan, C-C., S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, "High-power, low-efficiency-droop semipolar (2021) single-quantum-well blue light-emitting diodes", Applied Physics Express, vol. 5, no. 6: IOP Publishing, pp. 062103, 2012.
Farrell, R. M., C. J. Neufeld, N. G. Toledo, S. P. DenBaars, U. K. Mishra, J. S. Speck, and S. Nakamura, Iii-nitride flip-chip solar cells, jul # " 19", 2012.
Browne, D. A., E. C. Young, J. R. Lang, C. A. Hurni, and J. S. Speck, "Indium and impurity incorporation in InGaN films on polar, nonpolar, and semipolar GaN orientations grown by ammonia molecular beam epitaxy", Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol. 30, no. 4: AVS, pp. 041513, 2012.
Farahani, SK. Vasheghani, TD. Veal, AM. Sanchez, O. Bierwagen, ME. White, S. Gorfman, PA. Thomas, JS. Speck, and CF. McConville, "Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO 2 on sapphire", Physical Review B, vol. 86, no. 24: American Physical Society, pp. 245315, 2012.
Farahani, SK. Vasheghani, TD. Veal, AM. Sanchez, O. Bierwagen, ME. White, S. Gorfman, PA. Thomas, JS. Speck, and CF. McConville, "Influence of charged-dislocation density variations on carrier mobility in heteroepitaxial semiconductors: The case of SnO 2 on sapphire", Physical Review B, vol. 86, no. 24: American Physical Society, pp. 245315, 2012.
Zhang, Z., CA. Hurni, AR. Arehart, JS. Speck, and SA. Ringel, "Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy", Applied Physics Letters, vol. 101, no. 15: AIP, pp. 152104, 2012.
Wu, Y-R., C-P. Wang, K-C. Wang, and J. S. Speck, "Influences of Indium Fluctuation to carrier transport and the Current-voltage Turn-on Behavior in the InGaN Quantum Well LEDs", CLEO: Applications and Technology: Optical Society of America, pp. JTh2A–72, 2012.
D'evelyn, M. P., and J. S. Speck, Large Area Nitride Crystal and Method for Making It, 2012.
Baker, T. J., B. A. Haskell, J. S. Speck, and S. Nakamura, Lateral growth method for defect reduction of semipolar nitride films, apr # " 3", 2012.
Baker, T. J., B. A. Haskell, J. S. Speck, and S. Nakamura, Lateral growth method for defect reduction of semipolar nitride films, 2012.
Lee, C. Hoon, J. S. Speck, H. San Kim, J. Jo Kim, S. Han Kim, and J. Ho Lee, Light emitting device for AC power operation, 2012.
Lee, C. Hoon, J. S. Speck, H. San Kim, J. Jo Kim, S. Han Kim, and J. Ho Lee, Light emitting device for AC power operation, 2012.
Speck, J. S., C. C. A. Weisbuch, and E. de Nazaret Matioli, Light emitting devices with embedded void-gap structures through bonding of structured materials on active devices, jan # " 26", 2012.
Huang, C-Y., S. Nakamura, S. P. DenBaars, and J. S. Speck, Magnesium doping in barriers in multiple quantum well structures of iii-nitride-based light emitting devices, may # " 3", 2012.
Farrell, RM., EC. Young, F. Wu, SP. DenBaars, and JS. Speck, "Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices", Semiconductor Science and Technology, vol. 27, no. 2: IOP Publishing, pp. 024001, 2012.
Schmidt, M. C., K. Choong Kim, H. Sato, S. P. DenBaars, J. S. Speck, and S. Nakamura, Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices, 2012.
Schmidt, M. C., K. Choong Kim, H. Sato, S. P. DenBaars, J. S. Speck, and S. Nakamura, Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices, 2012.
Schmidt, M. C., K. Choong Kim, H. Sato, S. P. DenBaars, J. S. Speck, and S. Nakamura, Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices, 2012.

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