Publications

Found 914 results
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2011
Singisett, U., M. Hoi Wong, J. S. Speck, and U. K. Mishra, "Vertically scaled 5 nm GaN channel enhancement-mode N-polar GaN MOS-HFET with 560 mS/mm g m and 0.76 Ω-mm R on", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 1–2, 2011.
Toledo, N., C. Neufeld, M. Scarpulla, T. Buehl, S. Cruz, A. Gossard, S. DenBaars, J. Speck, and U. Mishra, "Wafer Bonded GaAs-Sapphire for Photovoltaic Applications via Adhesive Bonding", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Wong, MH., DF. Brown, ML. Schuette, H. Kim, V. Balasubramanian, W. Lu, JS. Speck, and UK. Mishra, "X-band power performance of N-face GaN MIS-HEMTs", Electronics Letters, vol. 47, no. 3: IET Digital Library, pp. 214–215, 2011.
2010
Brown, D. F., S. Keller, T. E. Mates, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition", Journal of Applied Physics, vol. 107, no. 3: AIP, pp. 033509, 2010.
Brown, D. F., S. Keller, T. E. Mates, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition", Journal of Applied Physics, vol. 107, no. 3: AIP, pp. 033509, 2010.
Matioli, E., B. Fleury, E. Rangel, T. Melo, E. Hu, J. Speck, and C. Weisbuch, "High extraction efficiency GaN-based photonic-crystal light-emitting diodes: Comparison of extraction lengths between surface and embedded photonic crystals", Applied physics express, vol. 3, no. 3: IOP Publishing, pp. 032103, 2010.
Matioli, E., B. Fleury, E. Rangel, T. Melo, E. Hu, J. Speck, and C. Weisbuch, "High extraction efficiency GaN-based photonic-crystal light-emitting diodes: Comparison of extraction lengths between surface and embedded photonic crystals", Applied physics express, vol. 3, no. 3: IOP Publishing, pp. 032103, 2010.
Matioli, E., E. Rangel, M. Iza, B. Fleury, N. Pfaff, J. Speck, E. Hu, and C. Weisbuch, "High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals", Applied physics letters, vol. 96, no. 3: AIP, pp. 031108, 2010.
Raring, J. W., M. C. Schmidt, C. Poblenz, Y-C. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, et al., "High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates", Applied physics express, vol. 3, no. 11: IOP Publishing, pp. 112101, 2010.
Speck, J., E. Hu, C. Weisbuch, Y-S. Choi, K. McGroddy, G. Koblmüller, E. Matioli, E. Rangel, F. Rol, and D. Simeonov, High-Efficiency Nitride-Base Photonic Crystal Light Sources: The Regents Of The University Of California, 2010.
Speck, J., E. Hu, C. Weisbuch, Y-S. Choi, K. McGroddy, G. Koblmüller, E. Matioli, E. Rangel, F. Rol, and D. Simeonov, High-Efficiency Nitride-Base Photonic Crystal Light Sources: The Regents Of The University Of California, 2010.
Koblmüller, G., RM. Chu, A. Raman, UK. Mishra, and JS. Speck, "High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels", Journal of Applied Physics, vol. 107, no. 4: AIP, pp. 043527, 2010.
Miller, N., JW. Ager III, HM. Smith III, MA. Mayer, KM. Yu, EE. Haller, W. Walukiewicz, WJ. Schaff, C. Gallinat, G. Koblmüller, et al., "Hole transport and photoluminescence in Mg-doped InN", Journal of Applied Physics, vol. 107, no. 11: AIP, pp. 113712, 2010.
Miller, N., JW. Ager III, HM. Smith III, MA. Mayer, KM. Yu, EE. Haller, W. Walukiewicz, WJ. Schaff, C. Gallinat, G. Koblmüller, et al., "Hole transport and photoluminescence in Mg-doped InN", Journal of Applied Physics, vol. 107, no. 11: AIP, pp. 113712, 2010.
Rangel, E., E. Matioli, H-T. Chen, Y-S. Choi, C. Weisbuch, J. S. Speck, and E. L. Hu, "Interplay of cavity thickness and metal absorption in thin-film InGaN photonic crystal light-emitting diodes", Applied Physics Letters, vol. 97, no. 6: AIP, pp. 061118, 2010.
Rauch, C., F. Reurings, F. Tuomisto, TD. Veal, C. F. McConville, H. Lu, WJ. Schaff, CS. Gallinat, G. Koblmüller, JS. Speck, et al., "In-vacancies in Si-doped InN", physica status solidi (a), vol. 207, no. 5: WILEY-VCH Verlag, pp. 1083–1086, 2010.
Yang, CK., P. Roblin, F. De Groote, SA. Ringel, S. Rajan, JP. Teyssier, C. Poblenz, Y. Pei, J. Speck, and UK. Mishra, "Linear and Nonlinear Device Modeling-Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer", IEEE Transactions on Microwave Theory and Techniques, vol. 58, no. 5, pp. 1077, 2010.
Fujiwara, T., S. Keller, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Low ohmic contact resistance m-plane AlGaN/GaN heterojunction field-effect transistors with enhancement-mode operations", Applied physics express, vol. 3, no. 10: IOP Publishing, pp. 101002, 2010.
Matioli, E., B. Fleury, E. Rangel, E. Hu, J. Speck, and C. Weisbuch, "Measurement of extraction and absorption parameters in GaN-based photonic-crystal light-emitting diodes", Journal of applied physics, vol. 107, no. 5: AIP, pp. 053114, 2010.
Wong, M. Hoi, Y. Pei, D. Brown, J. S. Speck, U. K. Mishra, M. L. Schuette, H. Kim, V. Balasubramanian, and W. Lu, "N-face GaN-based microwave metal-insulator-semiconductor high electron mobility transistors by plasma-assisted molecular beam epitaxy", Proceedings of CS MANTECH Conference. Oregon, USA, pp. 189–192, 2010.
Metcalfe, G. D., H. Shen, M. Wraback, A. Hirai, G. Koblmüller, C. S. Gallinat, and J. S. Speck, "Nitride semiconductors as terahertz sources based on spontaneous and piezoelectric polarization", physica status solidi (c), vol. 7, no. 10: Wiley Online Library, pp. 2455–2458, 2010.
Dasgupta, S., Y. Pei, B. L. Swenson, S. Keller, J. S. Speck, U. K. Mishra, and others, "N-polar GaN/AlN MIS-HEMT for Ka-band power applications", IEEE Electron Device Letters, vol. 31, no. 12: IEEE, pp. 1437–1439, 2010.
Mishra, U. K., M. Hoi Wong, S. Dasgupta, D. F. Brown, B. L. Swenson, S. Keller, J. S. Speck, and others, "N-polar GaN-based MIS-HEMTs for mixed signal applications", Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International: IEEE, pp. 1130–1133, 2010.
Raethel, J., P. Schley, E. Sakalauskas, G. Gobsch, R. Mueller, T. A. Klar, J. Pezoldt, R. Goldhahn, G. Koblmueller, J. S. Speck, et al., "Optical anisotropy of a-and m-plane InN grown on free-standing GaN substrates", Verhandlungen der Deutschen Physikalischen Gesellschaft, 2010.
Farrell, R. M., M. C. Schmidt, K-C. Kim, H. Masui, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers, 2010.

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