Publications

Found 635 results
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2012
Baker, T. J., B. A. Haskell, J. S. Speck, and S. Nakamura, Lateral growth method for defect reduction of semipolar nitride films, 2012.
Huang, C-Y., S. Nakamura, S. P. DenBaars, and J. S. Speck, Magnesium doping in barriers in multiple quantum well structures of iii-nitride-based light emitting devices, may # " 3", 2012.
Sato, H., H. Hirasawa, R. B. Chung, S. P. DenBaars, J. S. Speck, and S. Nakamura, Method for fabrication of semipolar (Al, In, Ga, B) N based light emitting diodes, 2012.
Chung, R. B., C. Han, S. P. DenBaars, J. S. Speck, and S. Nakamura, METHOD FOR REDUCTION OF EFFICIENCY DROOP USING AN (Al, In, Ga) N/Al (x) In (1-x) N SUPERLATTICE ELECTRON BLOCKING LAYER IN NITRIDE BASED LIGHT EMITTING DIODES, jun # " 7", 2012.
Wong, M. Hoi, F. Wu, C. A. Hurni, S. Choi, J. S. Speck, and U. K. Mishra, "Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source", Applied Physics Letters, vol. 100, no. 7: AIP, pp. 072107, 2012.
Hodges, C., N. Killat, SW. Kaun, MH. Wong, F. Gao, T. Palacios, UK. Mishra, JS. Speck, D. Wolverson, and M. Kuball, "Optical investigation of degradation mechanisms in AlGaN/GaN high electron mobility transistors: Generation of non-radiative recombination centers", Applied Physics Letters, vol. 100, no. 11: AIP, pp. 112106, 2012.
Matioli, E. de Nazaret, C. C. A. Weisbuch, J. S. Speck, and E. L. Hu, Optoelectronic devices with embedded void structures, 2012.
Koslow, I. L., M. T. Hardy, P. Shan Hsu, P-Y. Dang, F. Wu, A. Romanov, Y-R. Wu, E. C. Young, S. Nakamura, J. S. Speck, et al., "Performance and polarization effects in (11 2\= 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers", Applied Physics Letters, vol. 101, no. 12: AIP, pp. 121106, 2012.
Koslow, I. L., M. T. Hardy, P. Shan Hsu, P-Y. Dang, F. Wu, A. Romanov, Y-R. Wu, E. C. Young, S. Nakamura, J. S. Speck, et al., "Performance and polarization effects in (11 2\= 2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers", Applied Physics Letters, vol. 101, no. 12: AIP, pp. 121106, 2012.
Hirai, A., Z. Jia, M. Saito, H. Yamada, K. Iso, S. P. DenBaars, S. Nakamura, and J. S. Speck, Planar nonpolar m-plane group III nitride films grown on miscut substrates, 2012.
Chung, R. B., C. Han, C-C. Pan, N. Pfaff, J. S. Speck, S. P. DenBaars, and S. Nakamura, "The reduction of efficiency droop by Al0. 82In0. 18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes", Applied Physics Letters, vol. 101, no. 13: AIP, pp. 131113, 2012.
Zhao, Y., C-Y. Huang, S. Tanaka, C-C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. DenBaars, and S. Nakamura, "Semipolar (20-2-1) Blue and Green InGaN Light-Emitting Diodes", CLEO: Applications and Technology: Optical Society of America, pp. JTh4J–2, 2012.
Huang, C-Y., Y. Zhao, M. Hardy, D. Feezell, J. S. Speck, S. DenBaars, and S. Nakamura, "Semipolar (20-2-1) Laser Diodes (λ= 505nm) with Wavelength-Stable InGaN/GaN Quantum Wells", CLEO: Science and Innovations: Optical Society of America, pp. CTu2N–5, 2012.
Huang, C-Y., Y. Zhao, M. Hardy, D. Feezell, J. S. Speck, S. DenBaars, and S. Nakamura, "Semipolar (20-2-1) Laser Diodes (λ= 505nm) with Wavelength-Stable InGaN/GaN Quantum Wells", CLEO: Science and Innovations: Optical Society of America, pp. CTu2N–5, 2012.
Hardy, M. T., S. P. DenBaars, J. S. Speck, and S. Nakamura, Strain compensated short-period superlattices on semipolar or nonpolar gan for defect reduction and stress engineering, 2012.
Hsu, P. Shan, M. T. Hardy, E. C. Young, A. E. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Stress relaxation and critical thickness for misfit dislocation formation in (10 1\= 0) and (30 31\=) InGaN/GaN heteroepitaxy", Applied Physics Letters, vol. 100, no. 17: AIP, pp. 171917, 2012.
Hsu, P. Shan, M. T. Hardy, E. C. Young, A. E. Romanov, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Stress relaxation and critical thickness for misfit dislocation formation in (10 1\= 0) and (30 31\=) InGaN/GaN heteroepitaxy", Applied Physics Letters, vol. 100, no. 17: AIP, pp. 171917, 2012.
Hardy, M. T., E. C. Young, P. Shan Hsu, D. A. Haeger, I. L. Koslow, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (20 2\= 1) InGaN/GaN heterostructures", Applied Physics Letters, vol. 101, no. 13: AIP, pp. 132102, 2012.
Hardy, M. T., E. C. Young, P. Shan Hsu, D. A. Haeger, I. L. Koslow, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (20 2\= 1) InGaN/GaN heterostructures", Applied Physics Letters, vol. 101, no. 13: AIP, pp. 132102, 2012.
Hardy, M. T., E. C. Young, P. Shan Hsu, D. A. Haeger, I. L. Koslow, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Suppression of m-plane and c-plane slip through Si and Mg doping in partially relaxed (20 2\= 1) InGaN/GaN heterostructures", Applied Physics Letters, vol. 101, no. 13: AIP, pp. 132102, 2012.
Hardy, M. T., P. Shan Hsu, F. Wu, I. L. Koslow, E. C. Young, S. Nakamura, A. E. Romanov, S. P. DenBaars, and J. S. Speck, "Trace analysis of non-basal plane misfit stress relaxation in (20 2\= 1) and (30 3\= 1\=) semipolar InGaN/GaN heterostructures", Applied Physics Letters, vol. 100, no. 20: AIP, pp. 202103, 2012.
Hardy, M. T., P. Shan Hsu, F. Wu, I. L. Koslow, E. C. Young, S. Nakamura, A. E. Romanov, S. P. DenBaars, and J. S. Speck, "Trace analysis of non-basal plane misfit stress relaxation in (20 2\= 1) and (30 3\= 1\=) semipolar InGaN/GaN heterostructures", Applied Physics Letters, vol. 100, no. 20: AIP, pp. 202103, 2012.
2011
Farrell, R. M., D. A. Haeger, P. Shan Hsu, M. T. Hardy, K. M. Kelchner, K. Fujito, D. F. Feezell, U. K. Mishra, S. P. DenBaars, J. S. Speck, et al., "AlGaN-Cladding-Free m -Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers", Applied Physics Express, vol. 4, pp. 092105, 2011.
Farrell, R. M., D. A. Haeger, P. Shan Hsu, M. T. Hardy, K. M. Kelchner, K. Fujito, D. F. Feezell, U. K. Mishra, S. P. DenBaars, J. S. Speck, et al., "AlGaN-Cladding-Free m -Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers", Applied Physics Express, vol. 4, pp. 092105, 2011.
Farrell, R. M., D. A. Haeger, P. Shan Hsu, M. T. Hardy, K. M. Kelchner, K. Fujito, D. F. Feezell, U. K. Mishra, S. P. DenBaars, J. S. Speck, et al., "AlGaN-Cladding-Free m -Plane InGaN/GaN Laser Diodes with p-Type AlGaN Etch Stop Layers", Applied Physics Express, vol. 4, pp. 092105, 2011.

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