Publications
Found 859 results
Author Title Type [ Year
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, "Semipolar (1011) InGaN/GaN laser diodes on bulk GaN substrates", Japanese Journal of Applied Physics, vol. 46, no. 5L: IOP Publishing, pp. L444, 2007.
, "Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films", Japanese Journal of Applied Physics, vol. 46, no. 2R: IOP Publishing, pp. 542, 2007.
, "Study of nonpolar m-plane In Ga N/ Ga N multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition", Applied Physics Letters, vol. 91, no. 18: AIP, pp. 181120, 2007.
, Technique for the growth of planar semi-polar gallium nitride, may # " 22", 2007.
, "Vertical defects in heavily Mg-doped Al0. 69Ga0. 31N", physica status solidi (a), vol. 204, no. 10: Wiley Online Library, pp. 3423–3428, 2007.
, "AlGaN/AlN distributed bragg reflectors for deep ultraviolet wavelengths", physica status solidi (a), vol. 203, no. 8: Wiley Online Library, pp. 1915–1919, 2006.
, "Characterization of crystallographic properties and defects via X-ray microdiffraction in GaN (0001) layers", physica status solidi (a), vol. 203, no. 1: WILEY-VCH Verlag, pp. 142–148, 2006.
, "Cracking of III-nitride layers with strain gradients", Applied physics letters, vol. 89, no. 16: AIP, pp. 161922, 2006.
, "Crystal quality and growth evolution of aluminum nitride on silicon carbide", physica status solidi (a), vol. 203, no. 7: Wiley Online Library, pp. 1708–1711, 2006.
, "Defect reduction in nonpolar a-plane GaN films using in situ Si N x nanomask", Applied physics letters, vol. 89, no. 4: AIP, pp. 041903, 2006.
, "Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy", Journal of crystal growth, vol. 297, no. 2: Elsevier, pp. 321–325, 2006.
, "Effect of Substrate Miscut on the Direct Growth of Semipolar (101̄1̄) GaN on (100) MgAl 2 O 4 by Metalorganic Chemical Vapor Deposition", Japanese Journal of Applied Physics, vol. 45, 06, 2006.
, "Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC", Japanese journal of applied physics, vol. 45, no. 3L: IOP Publishing, pp. L322, 2006.
, "Effect of threading dislocation density on Ni/ n-Ga N Schottky diode I-V characteristics", Journal of applied physics, vol. 100, no. 2: AIP, pp. 023709, 2006.
, "Etching of Ga-face and N-face GaN by inductively coupled plasma", Japanese journal of applied physics, vol. 45, no. 2R: IOP Publishing, pp. 720, 2006.
, "Exciton dynamics in nonpolar (11$$\backslash$bar 2 $0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", physica status solidi (c), vol. 3, no. 6: WILEY-VCH Verlag, pp. 2082–2086, 2006.
, "GaN quantum dots: Nanophotonics and nanophononics", Quantum Sensing and Nanophotonic Devices III, vol. 6127: International Society for Optics and Photonics, pp. 61270I, 2006.
, "Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation", Device Research Conference, 2006 64th: IEEE, pp. 101–102, 2006.
, "Improved quality (11 2\= 0) a-plane GaN with sidewall lateral epitaxial overgrowth", Applied physics letters, vol. 88, no. 6: AIP, pp. 061908, 2006.
, "Mapping misorientation and crystallographic tilt in GaN layers via polychromatic microdiffraction", physica status solidi (b), vol. 243, no. 7: Wiley Online Library, pp. 1508–1513, 2006.
, "Nonpolar m-plane blue-light-emitting diode lamps with output power of 23.5 mW under pulsed operation", Japanese journal of applied physics, vol. 45, no. 2R: IOP Publishing, pp. 739, 2006.
, "Optical and structural properties of GaN nanopillar and nanostripe arrays with embedded In Ga N/ Ga N multi-quantum wells", Journal of Applied Physics, vol. 100, no. 5: AIP, pp. 054314, 2006.