Publications
Found 220 results
Author Title Type [ Year
] Filters: First Letter Of Last Name is I [Clear All Filters]
, "Observation of arsenic precipitates in GaInAs grown at low temperature on InP", Applied physics letters, vol. 62, no. 18: AIP, pp. 2209–2211, 1993.
, "Observation of impurity effects on the nucleation of arsenic precipitates in GaAs", Applied physics letters, vol. 62, no. 2: AIP, pp. 169–171, 1993.
, "The role of microstructure in the electrical properties of GaAs grown at low temperature", Journal of electronic materials, vol. 22, no. 12: Springer-Verlag, pp. 1421–1424, 1993.
, "Growth of epitaxial MgO films on Sb-passivated (001) GaAs: Properties of the MgO/GaAs interface", Applied physics letters, vol. 66, no. 26: AIP, pp. 3588–3590, 1995.
, "Improvement in low energy ion-induced damage with a low temperature GaAs capping layer", Applied physics letters, vol. 69, no. 12: AIP, pp. 1728–1730, 1996.
, "Order No.: JA608-001\copyright 1996 MRS", MRS BULLETIN, 1996.
, "Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 3: Cambridge University Press, 1998.
, "CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES-Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 73, no. 6: New York [etc.] American Institute of Physics., pp. 747–749, 1998.
, "Electrical characterization of GaN pn junctions with and without threading dislocations", Applied physics letters, vol. 73, no. 7: AIP, pp. 975–977, 1998.
, "Fast lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition using a two-step process", MRS Online Proceedings Library Archive, vol. 537: Cambridge University Press, 1998.
, "Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition", Journal of Crystal Growth, vol. 195, no. 1-4: North-Holland, pp. 328–332, 1998.
, "Microstructure and Electronic Properties of GaN Laterally Overgrown by Metal Organic Chemical Vapor Deposition", Blue Laser and Light Emitting Diodes II: Ohmsha, pp. 37, 1998.
, "Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition", Applied physics letters, vol. 73, no. 6: AIP, pp. 747–749, 1998.
, "Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition", Applied physics letters, vol. 72, no. 18: AIP, pp. 2247–2249, 1998.
, "Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride", Applied physics letters, vol. 74, no. 14: AIP, pp. 2035–2037, 1999.
, "Chapter 12: Material Growth and Characterization (Wide Gap and Nitride)-Structural and optical properties of low-dislocation-density GaN laterally overgrown by metalorganic chemical vapour", Institute of Physics Conference Series, vol. 162: Bristol [England]; Boston: Adam Hilger, Ltd., c1985-, pp. 681–686, 1999.
, "Chapter 5: Field Effect Transistors (FETs and HEMTs)-First demonstration of AlGaN/GaN heterostructure field effect transistor on GaN grown by lateral epitaxial overgrowth (LEO)", Institute of Physics Conference Series, vol. 162: Bristol [England]; Boston: Adam Hilger, Ltd., c1985-, pp. 177–184, 1999.
, "ELECTRONIC STRUCTURE AND TRANSPORT (PACS 71-73)-Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy", Journal of Applied Physics, vol. 86, no. 8: New York, NY: American Institute of Physics, c1937-, pp. 4520–4526, 1999.
, "Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth", Applied physics letters, vol. 74, no. 10: AIP, pp. 1460–1462, 1999.
, "Extended defect reduction in GaN laterally overgrown on Si (111)", CONFERENCE SERIES-INSTITUTE OF PHYSICS, vol. 162: IOP PUBLISHING LTD, pp. 833–836, 1999.
, "Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process", MRS Internet Journal of Nitride Semiconductor Research, vol. 4, pp. 453–458, 1999.
, "First demonstration of AlGaN/GaN heterostructure field effect transistor on GaN grown by lateral epitaxial overgrowth (LEO)", CONFERENCE SERIES-INSTITUTE OF PHYSICS, vol. 162: IOP PUBLISHING LTD, pp. 177–184, 1999.
, "High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 74, no. 23: AIP, pp. 3528–3530, 1999.
, "High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers", Applied physics letters, vol. 75, no. 12: AIP, pp. 1706–1708, 1999.
, "Maskless lateral epitaxial overgrowth of GaN on sapphire", MRS Online Proceedings Library Archive, vol. 572: Cambridge University Press, 1999.