Publications

Found 522 results
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2005
Chakraborty, A., S. Keller, C. Meier, B. A. Haskell, S. Keller, P. Waltereit, S. P. DenBaars, S. Nakamura, J. S. Speck, and U. K. Mishra, "Properties of nonpolar a-plane InGaN/ GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN", Applied Physics Letters, vol. 86, no. 3: AIP, pp. 031901, 2005.
Chichibu, SF., T. Koida, MD. Craven, BA. Haskell, T. Onuma, T. Sota, JS. Speck, SP. DenBaars, and S. Nakamura, "Reduction of bound-state and nonradiative defect densities in nonpolar (11&2macr; 0) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique", physica status solidi (c), vol. 2, no. 7: WILEY-VCH Verlag, pp. 2700–2703, 2005.
Chichibu, SF., T. Koida, MD. Craven, BA. Haskell, T. Onuma, T. Sota, JS. Speck, SP. DenBaars, and S. Nakamura, "Reduction of bound-state and nonradiative defect densities in nonpolar (11&2macr; 0) AlGaN/GaN quantum wells by the use of lateral epitaxial overgrowth technique", physica status solidi (c), vol. 2, no. 7: WILEY-VCH Verlag, pp. 2700–2703, 2005.
Cantu, P., F. Wu, P. Waltereit, S. Keller, AE. Romanov, SP. DenBaars, and JS. Speck, "Role of inclined threading dislocations in stress relaxation in mismatched layers", Journal of applied physics, vol. 97, no. 10: AIP, pp. 103534, 2005.
Ueda, O., H. Amano, S. Fujita, K. Kishino, K. Hiramatsu, M. Kawasaki, S. Chichibu, S. Niki, H. Hirayama, J. Speck, et al., Selected topics in applied physics III-Physics of UV materials and devices and their applications: JAPAN SOC APPLIED PHYSICS KUDAN-KITA BUILDING 5TH FLOOR, 1-12-3 KUDAN-KITA, CHIYODA-KU, TOKYO, 102-0073, JAPAN, 2005.
2006
Chern, G., E. Readinger, H. Shen, M. Wraback, C. Gallinat, G. Koblmueller, and J. Speck, "Comparison of terahertz emission from N-face and In-face indium nitride thin films", APS Meeting Abstracts, 2006.
Romanov, AE., GE. Beltz, P. Cantu, F. Wu, S. Keller, SP. DenBaars, and JS. Speck, "Cracking of III-nitride layers with strain gradients", Applied physics letters, vol. 89, no. 16: AIP, pp. 161922, 2006.
Chakraborty, A., KC. Kim, F. Wu, JS. Speck, SP. DenBaars, and UK. Mishra, "Defect reduction in nonpolar a-plane GaN films using in situ Si N x nanomask", Applied physics letters, vol. 89, no. 4: AIP, pp. 041903, 2006.
Chern, G. D., E. D. Readinger, H. Shen, M. Wraback, C. S. Gallinat, G. Koblmüller, and J. S. Speck, "Excitation wavelength dependence of terahertz emission from InN and InAs", Applied physics letters, vol. 89, no. 14: AIP, pp. 141115, 2006.
Onuma, T., A. Chakraborty, BA. Haskell, S. Keller, T. Sota, UK. Mishra, SP. DenBaars, JS. Speck, S. Nakamura, and SF. Chichibu, "Exciton dynamics in nonpolar (11$$\backslash$bar 2 $0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", physica status solidi (c), vol. 3, no. 6: WILEY-VCH Verlag, pp. 2082–2086, 2006.
Onuma, T., A. Chakraborty, BA. Haskell, S. Keller, T. Sota, UK. Mishra, SP. DenBaars, JS. Speck, S. Nakamura, and SF. Chichibu, "Exciton dynamics in nonpolar (11$$\backslash$bar 2 $0) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", physica status solidi (c), vol. 3, no. 6: WILEY-VCH Verlag, pp. 2082–2086, 2006.
Corrion, A., F. Wu, T. Mates, CS. Gallinat, C. Poblenz, and JS. Speck, "Growth of Fe-doped GaN by RF plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 289, no. 2: Elsevier, pp. 587–595, 2006.
Shen, L., L. McCarthy, T. Palacios, MH. Wong, C. Poblenz, A. Corrion, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Improved processing technology for GaN-capped deeply-recessed GaN HEMTs without surface passivation", Device Research Conference, 2006 64th: IEEE, pp. 101–102, 2006.
Wraback, M., G. D. Chern, E. D. Readinger, P. H. Shen, G. Koblmueller, C. S. Gallinat, J. S. Speck, and W. J. Schaff, Indium Nitride: A New Material for High Efficiency, Compact, 1550NM Laser-Based Terahertz Sources in Explosives Detection and Concealed Weapons Imaging: DTIC Document, 2006.
Gallinat, C. S., G. Koblmüller, J. S. Brown, S. Bernardis, J. S. Speck, G. D. Chern, E. D. Readinger, H. Shen, and M. Wraback, "In-polar InN grown by plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 89, no. 3: AIP, pp. 032109, 2006.
Recht, F., L. McCarthy, S. Rajan, A. Chakraborty, C. Poblenz, A. Corrion, JS. Speck, and UK. Mishra, "Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature", IEEE electron device letters, vol. 27, no. 4: IEEE, pp. 205–207, 2006.
Recht, F., L. McCarthy, S. Rajan, A. Chakraborty, C. Poblenz, A. Corrion, JS. Speck, and UK. Mishra, "Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature", IEEE electron device letters, vol. 27, no. 4: IEEE, pp. 205–207, 2006.
Recht, F., L. McCarthy, S. Rajan, A. Chakraborty, C. Poblenz, A. Corrion, JS. Speck, and UK. Mishra, "Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation", Info: Postprints, UC Santa Barbara, 2006.
Recht, F., L. McCarthy, S. Rajan, A. Chakraborty, C. Poblenz, A. Corrion, JS. Speck, and UK. Mishra, "Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation", Info: Postprints, UC Santa Barbara, 2006.
Craven, M. D., S. Keller, S. P. DenBaars, T. Margalith, J. Stephen Speck, S. Nakamura, and U. K. Mishra, Non-polar (Al, B, In, Ga) N quantum well and heterostructure materials and devices, 2006.
Chakraborty, A., B. A. Haskell, H. Masui, S. Keller, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, "Nonpolar m-plane blue-light-emitting diode lamps with output power of 23.5 mW under pulsed operation", Japanese journal of applied physics, vol. 45, no. 2R: IOP Publishing, pp. 739, 2006.
Koblmüller, G., CS. Gallinat, S. Bernardis, JS. Speck, GD. Chern, ED. Readinger, H. Shen, and M. Wraback, "Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy", Applied physics letters, vol. 89, no. 7: AIP, pp. 071902, 2006.
Chichibu, S. F., A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, et al., "Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors", Nature materials, vol. 5, no. 10: Nature Publishing Group, pp. 810, 2006.
Chichibu, S. F., A. Uedono, T. Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. T. Fini, S. Keller, S. P. DenBaars, J. S. Speck, et al., "Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors", Nature materials, vol. 5, no. 10: Nature Publishing Group, pp. 810, 2006.
Shu, CS., A. Chini, Y. Fu, C. Poblenz, JS. Speck, and UK. Mishra, "P-gan/algan/gan enhancement-mode hemts", 64th Device Research Conference (DRC), pp. 163–164, 2006.

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