Publications

Found 1602 results
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1999
Marchand, H., J.P. Ibbetson, P.T. Fini, X.H. Wu, S. Keller, S.P. DenBaars, J.S. Speck, and U.K. Mishra, "Fast Lateral Epitaxial Overgrowth of Gallium Nitride by Metalorganic Chemical Vapor Deposition Using a Two-Step Process", MRS Internet Journal of Nitride Semiconductor Research, vol. 4, pp. 453–458, 1999.
Nagra, A. S., T. R. Taylor, P. Periaswamy, J. Speck, and R. A. York, "First demonstration of a periodically loaded line phase shifter using BST capacitors", MRS Online Proceedings Library Archive, vol. 603: Cambridge University Press, 1999.
Vetury, R., H. Marchand, G. Parish, PT. Fini, JP. Ibbetson, S. Keller, JS. Speck, SP. DenBaars, and UK. Mishra, "First demonstration of AlGaN/GaN heterostructure field effect transistor on GaN grown by lateral epitaxial overgrowth (LEO)", CONFERENCE SERIES-INSTITUTE OF PHYSICS, vol. 162: IOP PUBLISHING LTD, pp. 177–184, 1999.
Xuehua, W., JS. Speck, and W. Ziqin, "Growth of High Quality Epitaxial GaN Thin Films", WULI-BEIJING-, vol. 28: UNKNOWN, pp. 44–50, 1999.
Elsass, C. R., Y. Smorchkova, E. Haus, P. Fini, P. Petroff, S. P. DenBaars, U. Mishra, J. Speck, and B. Heying, "High electron mobility 2DEG in AlGaN/GaN structures", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1028–1029, 1999.
Elsass, CR., IP. Smorchkova, B. Heying, E. Haus, P. Fini, K. Maranowski, JP. Ibbetson, S. Keller, PM. Petroff, SP. DenBaars, et al., "High mobility two-dimensional electron gas in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Applied physics letters, vol. 74, no. 23: AIP, pp. 3528–3530, 1999.
Fini, P., L. Zhao, B. Moran, M. Hansen, H. Marchand, JP. Ibbetson, SP. DenBaars, UK. Mishra, and JS. Speck, "High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers", Applied physics letters, vol. 75, no. 12: AIP, pp. 1706–1708, 1999.
Stephenson, GB., JA. Eastman, O. Auciello, A. Munkholm, C. Thompson, PH. Fuoss, P. Fini, SP. DenBaars, and JS. Speck, "IN SITU SYNCHROTRON RADIATION RESEARCH IN MATERIALS SCIENCE-Real-Time X-Ray Scattering Studies of Surface Structure During Metalorganic Chemical Vapor Deposition of GaN", MRS Bulletin-Materials Research Society, vol. 24, no. 1: [Pittsburgh, PA]: The Society, pp. 21–25, 1999.
Romanov, AE., PM. Petroff, and JS. Speck, "Lateral ordering of quantum dots by periodic subsurface stressors", Applied physics letters, vol. 74, no. 16: AIP, pp. 2280–2282, 1999.
Fini, P., H. Marchand, JP. Ibbetson, B. Moran, L. Zhao, SP. DenBaars, JS. Speck, and UK. Mishra, "Maskless lateral epitaxial overgrowth of GaN on sapphire", MRS Online Proceedings Library Archive, vol. 572: Cambridge University Press, 1999.
Fini, P. T., J. P. Ibbetson, H. Marchand, L. Zhao, S. P. DenBaars, and J. S. Speck, "Measurement of crystallographic tilt in the lateral epitaxial overgrowth of GaN", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1044, 1999.
DenBaars, SP., JS. Speck, UK. Mishra, and others, "MOCVD Growth of GaN for Blue Lasers and High Electron Mobility Transistors", Extended abstracts of the... Conference on Solid State Devices and Materials, vol. 1999, pp. 206–207, 1999.
Stephenson, GB., JA. Eastman, C. Thompson, O. Auciello, LJ. Thompson, A. Munkholm, P. Fini, SP. DenBaars, and JS. Speck, "Observation of growth modes during metal-organic chemical vapor deposition of GaN", Applied physics letters, vol. 74, no. 22: AIP, pp. 3326–3328, 1999.
Chichibu, SF., AC. Abare, MP. Mack, MS. Minsky, T. Deguchi, D. Cohen, P. Kozodoy, SB. Fleischer, S. Keller, JS. Speck, et al., "Optical properties of InGaN quantum wells", Materials Science and Engineering: B, vol. 59, no. 1-3: Elsevier, pp. 298–306, 1999.
Heying, B., I. Smorchkova, C. Elsass, E. Haus, P. Fini, T. Mates, SP. DenBaars, U. Mishra, and JS. Speck, "Optimization of high quality GaN by MBE", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1065, 1999.
Smorchkova, IP., CR. Elsass, JP. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, SP. DenBaars, JS. Speck, and UK. Mishra, "Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy", Journal of applied physics, vol. 86, no. 8: AIP, pp. 4520–4526, 1999.
Padmini, P., TR. Taylor, MJ. Lefevre, AS. Nagra, RA. York, and JS. Speck, "Realization of high tunability barium strontium titanate thin films by rf magnetron sputtering", Applied Physics Letters, vol. 75, no. 20: AIP, pp. 3186–3188, 1999.
G Stephenson, B., J. A. Eastman, O. Auciello, A. Munkholm, C. Thompson, P. H. Fuoss, P. Fini, S. P. DenBaars, and J. S. Speck, "Real-time X-ray scattering studies of surface structure during metalorganic chemical vapor deposition of GaN", MRS Bulletin, vol. 24, no. 1: Cambridge University Press, pp. 21–25, 1999.
Speck, JS., and SJ. Rosner, "The role of threading dislocations in the physical properties of GaN and its alloys", Physica B: Condensed Matter, vol. 273: Elsevier, pp. 24–32, 1999.
Chavarkar, P. M., L. Zhao, S. Keller, A. Fisher, J. S. Speck, and U. K. Mishra, "Strain relaxation in InxGa1-xAs lattice engineered substrates", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1050–1051, 1999.
Chavarkar, P., L. Zhao, S. Keller, A. Fisher, C. Zheng, JS. Speck, and UK. Mishra, "Strain relaxation of In x Ga 1- x As during lateral oxidation of underlying AlAs layers", Applied physics letters, vol. 75, no. 15: AIP, pp. 2253–2255, 1999.
Marchand, H., N. Zhang, L. Zhao, Y. Golan, SJ. Rosner, G. Girolami, P. T. Fini, JP. Ibbetson, S. Keller, S. DenBaars, et al., "Structural and optical properties of GaN laterally overgrown on Si (111) by metalorganic chemical vapor deposition using an AlN buffer layer", Materials Research Society Internet Journal of Nitride Semiconductor Research, vol. 4, no. 1: Cambridge University Press, 1999.
Marchand, H., JP. Ibbetson, PT. Fini, S. Chichibu, SJ. Rosner, S. Keller, SP. DenBaars, JS. Speck, and UK. Mishra, "Structural and optical properties of low-dislocation-density GaN laterally overgrown by metalorganic chemical vapor deposition", COMPOUND SEMICONDUCTORS 1998, no. 162: IOP PUBLISHING LTD DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND, pp. 681–686, 1999.
Mathis, SK., XH. Wu, AE. Romanov, and JS. Speck, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER (PACS 61-68, 78)-Threading dislocation reduction mechanisms in low-temperature-grown GaAs", Journal of Applied Physics, vol. 86, no. 9: New York, NY: American Institute of Physics, c1937-, pp. 4836–4842, 1999.
Fini, P., L. Zhao, B. Moran, M. Hansen, H. Marchand, JP. Ibbetson, SP. DenBaars, UK. Mishra, and JS. Speck, "STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER-High-quality coalescence of laterally overgrown GaN stripes on GaN/sapphire seed layers", Applied Physics Letters, vol. 75, no. 12: New York [etc.] American Institute of Physics., pp. 1706–1708, 1999.

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