Publications

Found 83 results
Author Title Type [ Year(Desc)]
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2006
Brown, JS., G. Koblmüller, F. Wu, R. Averbeck, H. Riechert, and JS. Speck, "Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and", Info: Postprints, UC Santa Barbara, 2006.
Yamanaka, T., D. Alexson, M. A. Stroscio, M. Dutta, J. Brown, P. Petroff, and J. Speck, "GaN quantum dots: Nanophotonics and nanophononics", Quantum Sensing and Nanophotonic Devices III, vol. 6127: International Society for Optics and Photonics, pp. 61270I, 2006.
Corrion, A., F. Wu, T. Mates, CS. Gallinat, C. Poblenz, and JS. Speck, "Growth of Fe-doped GaN by RF plasma-assisted molecular beam epitaxy", Journal of crystal growth, vol. 289, no. 2: Elsevier, pp. 587–595, 2006.
McLaurin, M., TE. Mates, F. Wu, and JS. Speck, "Growth of p-type and n-type m-plane GaN by molecular beam epitaxy", Journal of applied physics, vol. 100, no. 6: AIP, pp. 063707, 2006.
2007
Hashimoto, T., F. Wu, J. S. Speck, and S. Nakamura, "A GaN bulk crystal with improved structural quality grown by the ammonothermal method", Nature materials, vol. 6, no. 8: Nature Publishing Group, pp. 568, 2007.
Keller, S., NA. Fichtenbaum, M. Furukawa, JS. Speck, SP. DenBaars, and UK. Mishra, "Growth and characterization of N-polar In Ga N/ Ga N multiquantum wells", Applied physics letters, vol. 90, no. 19: AIP, pp. 191908, 2007.
Gallinat, CS., G. Koblmüller, JS. Brown, and JS. Speck, "A growth diagram for plasma-assisted molecular beam epitaxy of In-face InN", Journal of Applied Physics, vol. 102, no. 6: AIP, pp. 064907, 2007.
Imer, B., F. Wu, J. S. Speck, and S. P. DenBaars, "Growth evolution in sidewall lateral epitaxial overgrowth (SLEO)", Journal of Crystal Growth, vol. 306, no. 2: Elsevier, pp. 330–338, 2007.
Hashimoto, T., F. Wu, J. S. Speck, and S. Nakamura, "Growth of bulk GaN crystals by the basic ammonothermal method", Japanese Journal of Applied Physics, vol. 46, no. 10L: IOP Publishing, pp. L889, 2007.
Hashimoto, T., F. Wu, J. S. Speck, and S. Nakamura, "Growth of bulk GaN with low dislocation density by the ammonothermal method using polycrystalline GaN nutrient", Japanese journal of applied physics, vol. 46, no. 6L: IOP Publishing, pp. L525, 2007.
Haskell, B. A., M. B. McLaurin, S. P. DenBaars, J. Stephen Speck, and S. Nakamura, Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy, 2007.
Haskell, B. A., M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Growth of reduced dislocation density non-polar gallium nitride by hydride vapor phase epitaxy, 2007.
2008
Brown, D. F., S. Keller, F. Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Growth and characterization of N-polar GaN films on SiC by metal organic chemical vapor deposition", Journal of Applied Physics, vol. 104, no. 2: AIP, pp. 024301, 2008.
Imer, B. M., J. S. Speck, S. P. DenBaars, and S. Nakamura, Growth of planar non-polar ${$1-1 0 0$}$ m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD), 2008.
2009
Matioli, E., M. Iza, Y-S. Choi, F. Wu, S. Keller, H. Masui, E. Hu, J. Speck, and C. Weisbuch, "GaN-based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.
Scarpulla, M. A., CS. Gallinat, S. Mack, JS. Speck, and AC. Gossard, "GdN (1 1 1) heteroepitaxy on GaN (0 0 0 1) by N2 plasma and NH3 molecular beam epitaxy", Journal of Crystal Growth, vol. 311, no. 5: North-Holland, pp. 1239–1244, 2009.
Matioli, E., S. Keller, F. Wu, Y-S. Choi, E. Hu, J. Speck, and C. Weisbuch, "Growth of embedded photonic crystals for GaN-based optoelectronic devices", Journal of Applied Physics, vol. 106, no. 2: AIP, pp. 024309, 2009.
Dasgupta, S., F. Wu, JS. Speck, and UK. Mishra, "Growth of high quality N-polar AlN (000 1) on Si (111) by plasma assisted molecular beam epitaxy", Applied Physics Letters, vol. 94, no. 15: AIP, pp. 151906, 2009.
Ben-Yaacov, T., T. Ive, C. G. Van de Walle, U. K. Mishra, J. S. Speck, and S. P. DenBaars, "Growth of In-doped ZnO films by metalorganic chemical vapor deposition on GaN (0001) templates", physica status solidi (c), vol. 6, no. 6: Wiley Online Library, pp. 1464–1467, 2009.
2010
Pimputkar, S., D. S. Kamber, M. Saito, S. P. DenBaars, J. S. Speck, and S. Nakamura, Group-iii nitride monocrystal with improved crystal quality grown on an etched-back seed crystal and method of producing the same, 2010.
Brown, D. F., S. Keller, T. E. Mates, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Growth and characterization of In-polar and N-polar InAlN by metal organic chemical vapor deposition", Journal of Applied Physics, vol. 107, no. 3: AIP, pp. 033509, 2010.
Kamber, D. S., S. Nakamura, and J. S. Speck, Growth and manufacture of reduced dislocation density and free-standing aluminum nitride films by hydride vapor phase epitaxy, mar # " 18", 2010.
Haskell, B. A., M. D. Craven, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, Growth of reduced dislocation density non-polar gallium nitride, 2010.
2011
Kamber, D. S., S. Pimputkar, M. Saito, S. P. DenBaars, J. S. Speck, and S. Nakamura, Group-iii nitride monocrystal with improved purity and method of producing the same, 2011.
Keller, S., Y. Dora, S. Chowdhury, F. Wu, X. Chen, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon", physica status solidi (c), vol. 8, no. 7-8: Wiley Online Library, pp. 2086–2088, 2011.

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