Publications

Found 1602 results
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2003
Jena, D., S. Heikman, JS. Speck, UK. Mishra, A. Link, and O. Ambacher, "Magnetotransport measurement of effective mass, quantum scattering time, and alloy scattering potential of polarization-doped 3D electron slabs in graded-AlGaN", physica status solidi (c), no. 7: Wiley Online Library, pp. 2339–2342, 2003.
Jena, D., S. Heikman, J. S. Speck, A. Gossard, U. K. Mishra, A. Link, and O. Ambacher, "Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN", Physical Review B, vol. 67, no. 15: APS, pp. 153306, 2003.
Romanov, AE., P. Fini, and JS. Speck, "Modeling the extended defect evolution in lateral epitaxial overgrowth of GaN: Subgrain stability", Journal of applied physics, vol. 93, no. 1: AIP, pp. 106–114, 2003.
Craven, M., and J. Speck, Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition, 2003.
Sun, Y. Jun, O. Brandt, S. Cronenberg, S. Dhar, H. T. Grahn, K. H. Ploog, P. Waltereit, and J. S. Speck, "Nonpolar In x Ga 1- x N/GaN (11\= 0 0) multiple quantum wells grown on γ- LiAlO 2 (100) by plasma-assisted molecular-beam epitaxy", Physical Review B, vol. 67, no. 4: APS, pp. 041306, 2003.
Pervez, NK., PJ. Hansen, TR. Taylor, JS. Speck, and RA. York, "Observation of long transients in the electrical characterization of thin film BST capacitors", Integrated Ferroelectrics, vol. 53, no. 1: Taylor & Francis, pp. 503–511, 2003.
Miller, EJ., DM. Schaadt, ET. Yu, XL. Sun, LJ. Brillson, P. Waltereit, and JS. Speck, "Origin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy", Journal of applied physics, vol. 94, no. 12: AIP, pp. 7611–7615, 2003.
Winzer, A. T., R. Goldhahn, C. Buchheim, O. Ambacher, A. Link, M. Stutzmann, Y. Smorchkova, UK. Mishra, and JS. Speck, "Photoreflectance studiesof N-and Ga-face AlGaN/GaN heterostructures confininga polarisation induced 2DEG", physica status solidi (b), vol. 240, no. 2: Wiley Online Library, pp. 380–383, 2003.
Green, DS., E. Haus, F. Wu, L. Chen, UK. Mishra, and JS. Speck, "Polarity control during molecular beam epitaxy growth of Mg-doped GaN", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 21, no. 4: AVS, pp. 1804–1811, 2003.
Wu, F., M. D. Craven, S-H. Lim, and J. S. Speck, "Polarity determination of a-plane GaN on r-plane sapphire and its effects on lateral overgrowth and heteroepitaxy", Journal of Applied Physics, vol. 94, pp. 942-947, 2003.
Heikman, S., S. Keller, Y. Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures", Journal of applied physics, vol. 93, no. 12: AIP, pp. 10114–10118, 2003.
Jena, D., S. Heikman, A. Gossard, J. Speck, U. Mishra, A. Link, and O. Ambacher, "Polarization-induced three-dimensional electron slabs in III-V Nitride semiconductors", APS March Meeting Abstracts, 2003.
Sun, Y. Jun, O. Brandt, S. Cronenberg, S. Dhar, H. T. Grahn, K. H. Ploog, P. Waltereit, and J. S. Speck, "RAPID COMMUNICATIONS-Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Nonpolar InxGa1-xN/GaN (1100) multiple quantum wells grown on g-LiAlO2 (100) by plasma-assisted", Physical Review-Section B-Condensed Matter, vol. 67, no. 4: Woodbury, NY: published by the American Physical Society through the American Institute of Physics, c1998-, pp. 41306R, 2003.
Miller, EJ., DM. Schaadt, ET. Yu, P. Waltereit, C. Poblenz, and JS. Speck, "Reverse-bias leakage current reduction in GaN Schottky diodes by electrochemical surface treatment", Applied physics letters, vol. 82, no. 8: AIP, pp. 1293–1295, 2003.
Jena, D., S. Heikman, J. S. Speck, A. Gossard, U. K. Mishra, A. Link, and O. Ambacher, "Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Magnetotransport properties of a polarization-doped three-dimensional electron slab in graded AlGaN (4", Physical Review-Section B-Condensed Matter, vol. 67, no. 15: Woodbury, NY: published by the American Physical Society through the American Institute of Physics, c1998-, pp. 153306–153306, 2003.
Cantu, P., F. Wu, P. Waltereit, S. Keller, AE. Romanov, UK. Mishra, SP. DenBaars, and JS. Speck, "Si doping effect on strain reduction in compressively strained Al 0.49 Ga 0.51 N thin films", Applied physics letters, vol. 83, no. 4: AIP, pp. 674–676, 2003.
Cantu, P., S. Keller, F. Wu, P. Waltereit, AE. Romanov, UK. Mishra, JS. Speck, and SP. DenBaars, "Si doping effects on the electrical and structural properties of high Al composition AlxGa1- xN films grown by MOCVD", physica status solidi (c), no. 7: Wiley Online Library, pp. 2010–2013, 2003.
Petroff, P. M., J. S. Speck, J. Anna Johnson, and H. Lee, Strain-engineered, self-assembled, semiconductor quantum dot lattices, 2003.
Romanov, AE., and JS. Speck, "Stress relaxation in mismatched layers due to threading dislocation inclination", Applied Physics Letters, vol. 83, no. 13: AIP, pp. 2569–2571, 2003.
Craven, MD., A. Chakraborty, B. Imer, F. Wu, S. Keller, UK. Mishra, JS. Speck, and SP. DenBaars, "Structural and electrical characterization of a-plane GaN grown on a-plane SiC", physica status solidi (c), no. 7: Wiley Online Library, pp. 2132–2135, 2003.
Haskell, BA., F. Wu, S. Matsuda, MD. Craven, PT. Fini, SP. DenBaars, JS. Speck, and S. Nakamura, "Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy", Applied Physics Letters, vol. 83, no. 8: AIP, pp. 1554–1556, 2003.
Elhamri, S., A. Saxler, WC. Mitchel, R. Berney, C. Elsass, Y. Smorchkova, UK. Mishra, JS. Speck, U. Chowdhury, and RD. Dupuis, "Study of deleterious aging effects in GaN/AlGaN heterostructures", Journal of applied physics, vol. 93, no. 2: AIP, pp. 1079–1082, 2003.
Yu, E. T., Y. Arakawa, A. Rizzi, and J. S. Speck, Symposium L: GaN and Related Alloys: DTIC Document, 2003.
2002
Andrews, AM., and JS. Speck, "Antimony segregation in the oxidation of strained AlAsSb interlayers", Molecular Beam Epitaxy, 2002 International Conference on: IEEE, pp. 181–182, 2002.
Glaser, ER., WE. Carlos, GCB. Braga, JA. Freitas Jr, WJ. Moore, BV. Shanabrook, AE. Wickenden, DD. Koleske, RL. Henry, MW. Bayerl, et al., "Characterization of nitrides by electron paramagnetic resonance (EPR) and optically detected magnetic resonance (ODMR)", Materials Science and Engineering: B, vol. 93, no. 1-3: Elsevier, pp. 39–48, 2002.

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