Publications

Found 333 results
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2019
Smirnov, A. M., E. C. Young, V. E. Bougrov, J. S. Speck, and A. E. Romanov, "Stress relaxation in semipolar and nonpolar III-nitride heterostructures by formation of misfit dislocations of various origin", Journal of Applied Physics, vol. 126, pp. 245104, 2019.
2020
Khoury, M., H. Li, B. Bonef, T. Mates, F. Wu, P. Li, M. S. Wong, H. Zhang, J. Song, J. Choi, et al., "560 nm InGaN micro-LEDs on low-defect-density and scalable (202̅1) semipolar GaN on patterned sapphire substrates", Opt. Express, vol. 28, pp. 18150–18159, Jun, 2020.
SaifAddin, B. K., A. S. Almogbel, C. J. Zollner, F. Wu, B. Bonef, M. Iza, S. Nakamura, S. P. DenBaars, and J. S. Speck, "AlGaN Deep-Ultraviolet Light-Emitting Diodes Grown on SiC Substrates", ACS Photonics, 2020.
Lynsky, C., A. I. Alhassan, G. Lheureux, B. Bonef, S. P. DenBaars, S. Nakamura, Y-R. Wu, C. Weisbuch, and J. S. Speck, "Barriers to carrier transport in multiple quantum well nitride-based $c$-plane green light emitting diodes", Phys. Rev. Materials, vol. 4, pp. 054604, May, 2020.
Smith, J. M., R. Ley, M. S. Wong, Y. Hyun Baek, J. Hun Kang, C. Hon Kim, M. J. Gordon, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Comparison of size-dependent characteristics of blue and green InGaN microLEDs down to 1 μm in diameter", Applied Physics Letters, vol. 116, pp. 071102, 2020.
Chow, Y. Chao, C. Lee, M. S. Wong, Y-R. Wu, S. Nakamura, S. P. DenBaars, J. E. Bowers, and J. S. Speck, "Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors", Opt. Express, vol. 28, pp. 23796–23805, Aug, 2020.
Jorgensen, K. F., B. Bonef, and J. S. Speck, "High nitrogen flux plasma-assisted molecular beam epitaxy growth of InxGa1-xN films", Journal of Crystal Growth, vol. 546, pp. 125738, 2020.
Farzana, E., J. Wang, M. Monavarian, T. Itoh, K. S. Qwah, Z. J. Biegler, K. F. Jorgensen, and J. S. Speck, "Over 1 kV Vertical GaN-on-GaN p-n Diodes With Low On-Resistance Using Ammonia Molecular Beam Epitaxy", IEEE Electron Device Letters, vol. 41, pp. 1806-1809, 2020.
Khoury, M., H. Li, P. Li, Y. Chao Chow, B. Bonef, H. Zhang, M. S. Wong, S. Pinna, J. Song, J. Choi, et al., "Polarized monolithic white semipolar (202̅1) InGaN light-emitting diodes grown on high quality (202̅1) GaN/sapphire templates and its application to visible light communication", Nano Energy, vol. 67, pp. 104236, 2020.
Bonef, B., C. E. Reilly, F. Wu, S. Nakamura, S. P. DenBaars, S. Keller, and J. S. Speck, "Quantitative investigation of indium distribution in InN wetting layers and dots grown by metalorganic chemical vapor deposition", Applied Physics Express, vol. 13, pp. 065005, may, 2020.
Monavarian, M., J. Xu, M. N. Fireman, N. Nookala, F. Wu, B. Bonef, K. S. Qwah, E. C. Young, M. A. Belkin, and J. S. Speck, "Structural and optical properties of nonpolar m- and a-plane GaN/AlGaN heterostructures for narrow-linewidth mid-infrared intersubband transitions", Applied Physics Letters, vol. 116, pp. 201103, 2020.
Monavarian, M., J. Xu, M. N. Fireman, N. Nookala, F. Wu, B. Bonef, K. S. Qwah, E. C. Young, M. A. Belkin, and J. S. Speck, "Structural and optical properties of nonpolar m- and a-plane GaN/AlGaN heterostructures for narrow-linewidth mid-infrared intersubband transitions", Applied Physics Letters, vol. 116, pp. 201103, 2020.
Lheureux, G., M. Monavarian, R. Anderson, R. A. Decrescent, J. Bellessa, C. Symonds, J. A. Schuller, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Tamm plasmons in metal/nanoporous GaN distributed Bragg reflector cavities for active and passive optoelectronics", Opt. Express, vol. 28, pp. 17934–17943, Jun, 2020.
2021
Wong, M. S., D. Melchert, M. Haggmark, D. Myers, C. Lee, S. Grandrothula, M. de Vries, D. Gianola, M. Begley, T. Magarlith, et al., "Acousto-fluidic assembly of III-nitride micro-light-emitting diodes with magnetic alignment", Light-Emitting Devices, Materials, and Applications XXV: International Society for Optics and Photonics, 2021.
Monavarian, M., J. Xu, M. Khoury, F. Wu, P. De Mierry, P. Vennéguès, M. A. Belkin, and J. S. Speck, "Defect Tolerance of Intersubband Transitions in Nonpolar $\mathrmGa\mathrmN/(\mathrmAl,\mathrmGa)\mathrmN$ Heterostructures: A Path toward Low-Cost and Scalable Mid- to Far-Infrared Optoelectronics", Phys. Rev. Appl., vol. 16, pp. 054040, Nov, 2021.
Wong, M. S., N. C. Palmquist, J. Jiang, P. Chan, C. Lee, P. Li, J. Hun Kang, Y. Hyun Baek, C. Hon Kim, D. A. Cohen, et al., "Effects of activation method and temperature to III-nitride micro-light-emitting diodes with tunnel junction contacts grown by metalorganic chemical vapor deposition", Applied Physics Letters, vol. 119, 11, 2021.
Wong, M. S., S. Ho Oh, J. Back, C. Lee, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Enhanced external quantum efficiency of III-nitride micro-light-emitting diodes using vertical and transparent package", Japanese Journal of Applied Physics, vol. 60, pp. 020905, jan, 2021.
Wong, M. S., S. Ho Oh, J. Back, C. Lee, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Enhanced external quantum efficiency of III-nitride micro-light-emitting diodes using vertical and transparent package", Japanese Journal of Applied Physics, vol. 60, pp. 020905, jan, 2021.
Wang, J., B. K. Saifaddin, C. J. Zollner, B. Bonef, A. S. Almogbel, Y. Yao, M. Iza, Y. Zhang, M. N. Fireman, E. C. Young, et al., "High conductivity n-Al0.6Ga0.4N by ammonia-assisted molecular beam epitaxy for buried tunnel junctions in UV emitters", Opt. Express, vol. 29, pp. 40781–40794, Dec, 2021.
Shi, J., A. Krishnan, A. F. M. Anha Bhuiyan, Y. Rui Koh, K. Huynh, A. Mauze, S. Mu, B. M. Foley, H. Ahmad, T. Itoh, et al., "Thermal Transport Across Al-(AlxGa1-x)2O3 and Al-Ga2O3 Interfaces", International Electronic Packaging Technical Conference and Exhibition, vol. ASME 2021 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems, 10, 2021.
2022
Lynsky, C., G. Lheureux, B. Bonef, K. Shek Qwah, R. C. White, S. P. DenBaars, S. Nakamura, Y-R. Wu, C. Weisbuch, and J. S. Speck, "Improved Vertical Carrier Transport for Green III-Nitride LEDs Using $(\mathrmIn,\mathrmGa)\mathrmN$ Alloy Quantum Barriers", Phys. Rev. Appl., vol. 17, pp. 054048, May, 2022.
Farzana, E., A. Bhattacharyya, N. S. Hendricks, T. Itoh, S. Krishnamoorthy, and J. S. Speck, "Oxidized metal Schottky contact with high-κ dielectric field plate for low-loss high-power vertical β-Ga2O3 Schottky diodes", APL Materials, vol. 10, 11, 2022.
Green, A. J., J. Speck, G. Xing, P. Moens, F. Allerstam, K. Gumaelius, T. Neyer, A. Arias-Purdue, V. Mehrotra, A. Kuramata, et al., "β-Gallium oxide power electronics", APL Materials, vol. 10, 02, 2022.
Green, A. J., J. Speck, G. Xing, P. Moens, F. Allerstam, K. Gumaelius, T. Neyer, A. Arias-Purdue, V. Mehrotra, A. Kuramata, et al., "β-Gallium oxide power electronics", APL Materials, vol. 10, 02, 2022.
2023
Ho, W. Ying, Y. Chao Chow, Z. Biegler, K. Shek Qwah, T. Tak, A. Wissel-Garcia, I. Liu, F. Wu, S. Nakamura, and J. S. Speck, "Atomic layer etching (ALE) of III-nitrides", Applied Physics Letters, vol. 123, issue 6, 2023.

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