Publications

Found 1586 results
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2009
Speck, J., "Progress in the growth, characterization and device performance for nonpolar and semipolar GaN-based materials", Conference on Lasers and Electro-Optics: Optical Society of America, pp. CMM1, 2009.
Speck, J. S., Progress in the MBE Growth of InN, 2009.
Pimputkar, S., J. S. Speck, S. P. DenBaars, and S. Nakamura, "Prospects for LED lighting", Nature photonics, vol. 3, no. 4: Nature Publishing Group, pp. 180, 2009.
Masui, H., M. Schmidt, N. Fellows, H. Yamada, K. Iso, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Recent progress in nonpolar LEDs as polarized light emitters", physica status solidi (a), vol. 206, no. 2: Wiley Online Library, pp. 203–205, 2009.
Gallinat, C. S., G. Koblmüller, and J. S. Speck, "The role of threading dislocations and unintentionally incorporated impurities on the bulk electron conductivity of In-face InN", Applied Physics Letters, vol. 95, no. 2: AIP, pp. 022103, 2009.
Fujiwara, T., S. Keller, M. Higashiwaki, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors", Applied physics express, vol. 2, no. 6: IOP Publishing, pp. 061003, 2009.
Tamboli, A. C., M. C. Schmidt, S. Rajan, J. S. Speck, U. K. Mishra, S. P. DenBaars, and E. L. Hu, "Smooth top-down photoelectrochemical etching of m-plane GaN", Journal of The Electrochemical Society, vol. 156, no. 1: The Electrochemical Society, pp. H47–H51, 2009.
Masui, H., D. S. Kamber, S. E. Brinkley, F. Wu, T. J. Baker, H. Zhong, M. Iza, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Spontaneous formation of ${$1 1Ø 0 1$}$ InGaN quantum wells on a (1 1 2Ø 2) GaN template and their electroluminescence characteristics", Semiconductor Science and Technology, vol. 25, no. 1: IOP Publishing, pp. 015003, 2009.
Nagata, T., G. Koblmüller, O. Bierwagen, C. S. Gallinat, and J. S. Speck, "Surface structure and chemical states of a-plane and c-plane InN films", Applied Physics Letters, vol. 95, no. 13: AIP, pp. 132104, 2009.
Metcalfe, G. D., H. Shen, M. Wraback, G. Koblmüller, C. S. Gallinat, and J. S. Speck, "Terahertz emission from nonpolar indium nitride", Lasers and Electro-Optics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference. CLEO/QELS 2009. Conference on: IEEE, pp. 1–2, 2009.
Gallinat, CS., G. Koblmu, and others, "Thermal stability, surface kinetics, and MBE growth diagrams for N-and In-face InN", Indium Nitride and Related Alloys: CRC Press, pp. 67–97, 2009.
Miller, N., J. Ager, R. Jones, H. Smith, K. Man Yu, E. Haller, W. Walukiewicz, W. Schaff, C. Gallinat, G. Koblmüller, et al., "Thermopower of n-and p-type InN", APS Meeting Abstracts, 2009.
Xu, G., Y. J. Ding, H. Zhao, M. Jamil, N. Tansu, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, F. K. Hopkins, et al., "THz generation from InN films based on interference between optical rectification and photocurrent surge", Conference on Lasers and Electro-Optics: Optical Society of America, pp. CTuG5, 2009.
Xu, G., Y. J. Ding, H. Zhao, G. Liu, M. Jamil, N. Tansu, I. B. Zotova, C. E. Stutz, D. E. Diggs, N. Fernelius, et al., "THz generation from InN films due to destructive interference between optical rectification and photocurrent surge", Semiconductor Science and Technology, vol. 25, no. 1: IOP Publishing, pp. 015004, 2009.
Shen, H., M. Wraback, H. Zhong, A. Tyagi, SP. DenBaars, S. Nakamura, and JS. Speck, "Unambiguous evidence of the existence of polarization field crossover in a semipolar InGaN/GaN single quantum well", Applied Physics Letters, vol. 95, no. 3: AIP, pp. 033503, 2009.
Reurings, F., F. Tuomisto, C. S. Gallinat, G. Koblmüller, and J. S. Speck, "Vacancy defects probed with positron annihilation spectroscopy in In-polar InN grown by plasma-assisted molecular beam epitaxy: Effects of growth conditions", physica status solidi (c), vol. 6, no. S2: WILEY-VCH Verlag, 2009.
Uedono, A., S. Ishibashi, S. Keller, C. Moe, P. Cantu, TM. Katona, DS. Kamber, Y. Wu, E. Letts, SA. Newman, et al., "Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation", Journal of Applied Physics, vol. 105, no. 5: AIP, pp. 054501, 2009.
2008
Raman, A., S. Dasgupta, S. Rajan, J. S. Speck, and U. K. Mishra, "AlGaN channel high electron mobility transistors: Device performance and power-switching figure of merit", Japanese Journal of Applied Physics, vol. 47, no. 5R: IOP Publishing, pp. 3359, 2008.
Hashimoto, T., F. Wu, J. S. Speck, and S. Nakamura, "Ammonothermal growth of bulk GaN", Journal of Crystal Growth, vol. 310, no. 17: Elsevier, pp. 3907–3910, 2008.
Gorczyca, I., L. Dmowski, J. Plesiewicz, T. Suski, N. Egede Christensen, A. Svane, CS. Gallinat, G. Koblmueller, and JS. Speck, "Band structure and effective mass of InN under pressure", physica status solidi (b), vol. 245, no. 5: Wiley Online Library, pp. 887–889, 2008.
McLaurin, M. B., A. Hirai, E. Young, F. Wu, and J. S. Speck, "Basal plane stacking-fault related anisotropy in X-ray rocking curve widths of m-plane GaN", Japanese Journal of Applied Physics, vol. 47, no. 7R: IOP Publishing, pp. 5429, 2008.
Sato, H., H. Hirasawa, H. Asamizu, N. Fellows, A. Tyagi, M. Saito, K. Fujito, J. S. Speck, S. P. DenBaars, and S. Nakamura, "The Blue Laser Diode'The Blue Laser Diode', 1997", Journal of light and visual environment, vol. 32, no. 2, pp. 107–110, 2008.
Bierwagen, O., T. Ive, C. G. Van de Walle, and J. S. Speck, "Causes of incorrect carrier-type identification in van der Pauw–Hall measurements", Applied Physics Letters, vol. 93, no. 24: AIP, pp. 242108, 2008.
Armstrong, A., J. Caudill, A. Corrion, C. Poblenz, UK. Mishra, JS. Speck, and SA. Ringel, "Characterization of majority and minority carrier deep levels in p-type GaN: Mg grown by molecular beam epitaxy using deep level optical spectroscopy", Journal of Applied Physics, vol. 103, no. 6: AIP, pp. 063722, 2008.
Law, JJM., ET. Yu, BA. Haskell, PT. Fini, S. Nakamura, JS. Speck, and SP. DenBaars, "Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy", Journal of Applied Physics, vol. 103, no. 1: AIP, pp. 014305, 2008.

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