β-Ga2O3 is a wide bandgap (4.8 eV) semiconducting oxide that can be grown in high quality single crystals congruently from the melt. Donor doping is relatively easy and there are several options for deep compensating acceptors to produce semi-insulating materials. Due to the predicted breakdown voltage of ~8 MV/cm, the material has great potential for power electron devices. O ur group is focused on PAMBE of β-Ga 2 O 3 and the important β-(AlxGa1-x)2O3 /Ga2O3 heterostructures [link], doping, lateral [link] and vertical devices.