Biography

  I am a Materials PhD candidate in the Speck Group at UCSB. My research interests include semiconductor materials science and device physics. I am currently investigating β-Ga2O­­3 for potential in wide bandgap semiconductor devices. My work involves growth of β-Ga2O­­3 and its heterostructures by plasma-assisted molecular beam epitaxy as well as structural and electronic characterization of these thin films and related device structures.

Publications:

1.       Investigation of unintentional Fe incorporation in (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy. Mauze, A., Zhang, Y., Mates, T., Wu, F., & Speck, J. S.  Applied Physics Letters, 115(5), 052102 (2019) [link]

2.       Metal oxide catalyzed epitaxy (MOCATAXY) of β-Ga2O3 films in various orientations grown by plasma-assisted molecular beam epitaxy. Mauze, A., Zhang, Y., Itoh, T., Wu, F., & Speck, J. S. APL Materials, 8(2), 021104 (2020) [link]

3.       MOCVD grown epitaxial β-Ga2O3 thin film with an electron mobility of 176 cm2/Vs at room temperature. Y Zhang, F Alema, A Mauze, OS Koksaldi, R Miller, A Osinsky, JS Speck. APL Materials 7 (2) 022506 (2019) [link].

4.       n-type dopants in (001) β-Ga2O3 grown on (001) β-Ga2O3 substrates by plasma-assisted molecular beam epitaxy. SH Han, A Mauze, E Ahmadi, T Mates, Y Oshima, JS Speck. Semiconductor Science and Technology 33 (4), 045001 (2018) [link]

For more publications, visit this Google Scholar page