
Nolan Hendricks
Education
- B.S. in Chemical Engineering with a concentration in polymer science from Michigan State University
Biography
I am a PhD student studying Materials at UC Santa Barbara in Dr. James Speck’s group and a SMART scholar with the Air Force Research Laboratory Sensors Directorate. My research focus is the growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy as well as the fabrication and characterization of power electronic devices on β-Ga2O3 for high voltage operation.
Publications
“Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates.” Kyle J. Liddy, Andrew J. Green, Nolan S. Hendricks, Eric R. Heller, Neil A. Moser, Kevin D. Leedy, Andreas Popp, Miles T. Lindquist, Stephen E. Tetlak, Günter Wagner. 2019 Appl. Phys. Express 12 126501.
“Lateral β-Ga2O3 field effect transistors.” Kelson D Chabak, Kevin D Leedy, Andrew J Green, Shin Mou, Adam T Neal, Thaddeus Asel, Eric R Heller, Nolan S Hendricks, Kyle Liddy, Antonio Crespo, Nicholas C Miller, Miles T Lindquist, Neil A Moser, Robert C Fitch Jr, Dennis E Walker Jr, Donald L Dorsey and Gregg H Jessen.2020 Semicond. Sci. Technol. 35 013002
“Recessed-gate enhancement-mode β-Ga2O3 MOSFETs.” K. D. Chabak, J. P. McCandless, N. A. Moser, A. J. Green, K. Mahalingam, A. Crespo, N. Hendricks, B. M. Howe, S. E. Tetlak, K. Leedy, R. C. Fitch, D. Wakimoto, K. Sasaki, A. Kuramata, and G. H. Jessen. IEEE Electron Device Lett., vol. 39, no. 1, pp. 67–70, Jan. 2018.