Publications

Found 1586 results
Author Title Type [ Year(Desc)]
2016
Shen, C., C. Lee, T. Khee Ng, J. S. Speck, S. Nakamura, S. P. DenBaars, A. Y. Alyamani, M. M. Eldesouki, and B. S. Ooi, "GHz modulation enabled using large extinction ratio waveguide-modulator integrated with 404 nm GaN laser diode", Photonics Conference (IPC), 2016 IEEE: IEEE, pp. 813–814, 2016.
Pynn, CD., SJ. Kowsz, SH. Oh, H. Gardner, RM. Farrell, S. Nakamura, JS. Speck, and SP. DenBaars, "Green semipolar III-nitride light-emitting diodes grown by limited area epitaxy", Applied Physics Letters, vol. 109, no. 4: AIP Publishing, pp. 041107, 2016.
Shen, C., C. Lee, T. Khee Ng, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "High gain semiconductor optical amplifieróLaser diode at visible wavelength", Electron Devices Meeting (IEDM), 2016 IEEE International: IEEE, pp. 22–4, 2016.
Kyle, E. C. H., S. W. Kaun, F. Wu, B. Bonef, and J. S. Speck, "High indium content homogenous InAlN layers grown by plasma-assisted molecular beam epitaxy", Journal of Crystal Growth, vol. 454: North-Holland, pp. 164–172, 2016.
Alhassan, A. I., R. M. Farrell, B. Saifaddin, A. Mughal, F. Wu, S. P. DenBaars, S. Nakamura, and J. S. Speck, "High luminous efficacy green light-emitting diodes with AlGaN cap layer", Optics express, vol. 24, no. 16: Optical Society of America, pp. 17868–17873, 2016.
Cantore, M., N. Pfaff, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, "High luminous flux from single crystal phosphor-converted laser-based white lighting system", Optics Express, vol. 24, no. 2: Optical Society of America, pp. A215–A221, 2016.
Pourhashemi, A., R. M. Farrell, S. P. DenBaars, J. S. Speck, and S. Nakamura, High power blue-violet III-nitride semipolar laser diodes, may # " 31", 2016.
Lee, C., C. Zhang, D. Becerra, S. Lee, S. Ho Oh, R. M. Farrell, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, "High speed performance of III-nitride laser diode grown on (2021) semipolar plane for visible light communication", Photonics Conference (IPC), 2016 IEEE: IEEE, pp. 809–810, 2016.
Shen, C., T. Khee Ng, J. T. Leonard, A. Pourhashemi, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "High-brightness semipolar (2021) blue InGaN/GaN superluminescent diodes for droop-free solid-state lighting and visible-light communications", Optics letters, vol. 41, no. 11: Optical Society of America, pp. 2608–2611, 2016.
Chen, J., Y. S. Puzyrev, E. Xia Zhang, D. M. Fleetwood, R. D. Schrimpf, A. R. Arehart, S. A. Ringel, S. W. Kaun, E. C. H. Kyle, J. S. Speck, et al., "High-field stress, low-frequency noise, and long-term reliability of AlGaN/GaN HEMTs", IEEE Transactions on Device and Materials Reliability, vol. 16, no. 3: IEEE, pp. 282–289, 2016.
Shen, C., T. Khee Ng, J. T. Leonard, A. Pourhashemi, H. M. Oubei, M. S. Alias, S. Nakamura, S. P. DenBaars, J. S. Speck, A. Y. Alyamani, et al., "High-modulation-efficiency, integrated waveguide modulator–laser diode at 448 nm", Acs Photonics, vol. 3, no. 2: American Chemical Society, pp. 262–268, 2016.
Mughal, AJ., S. Oh, A. Myzaferi, S. Nakamura, JS. Speck, and SP. DenBaars, "High-power LEDs using Ga-doped ZnO current-spreading layers", Electronics Letters, vol. 52, no. 4: IET Digital Library, pp. 304–306, 2016.
Shen, C., C. Lee, T. Khee Ng, S. Nakamura, J. S. Speck, S. P. DenBaars, A. Y. Alyamani, M. M. El-Desouki, and B. S. Ooi, "High-speed 405-nm superluminescent diode (SLD) with 807-MHz modulation bandwidth", Optics express, vol. 24, no. 18: Optical Society of America, pp. 20281–20286, 2016.
Lee, C., C. Zhang, D. L. Becerra, S. Lee, R. M. Farrell, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, "High-speed performance of III-nitride 410 nm ridge laser diode on (202Ø1Ø) plane for visible light communication", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–2, 2016.
Yonkee, B. P., E. C. Young, J. T. Leonard, C. Lee, S. Ho Oh, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Hybrid MOCVD/MBE GaN tunnel junction LEDs with greater than 70% wall plug efficiency", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
Young, E. C., B. P. Yonkee, F. Wu, S. Ho Oh, S. P. DenBaars, S. Nakamura, and J. S. Speck, "Hybrid tunnel junction contacts to III–nitride light-emitting diodes", Applied Physics Express, vol. 9, no. 2: IOP Publishing, pp. 022102, 2016.
Foronda, H. M., M. A. Laurent, B. Yonkee, S. Keller, S. P. DenBaars, and J. S. Speck, "Improving source efficiency for aluminum nitride grown by metal organic chemical vapor deposition", Semiconductor Science and Technology, vol. 31, no. 8: IOP Publishing, pp. 085003, 2016.
Sintonen, S., P. Kivisaari, S. Pimputkar, S. Suihkonen, T. Schulz, J. S. Speck, and S. Nakamura, "Incorporation and effects of impurities in different growth zones within basic ammonothermal GaN", Journal of Crystal Growth, vol. 456: North-Holland, pp. 43–50, 2016.
Suihkonen, S., S. Pimputkar, J. S. Speck, and S. Nakamura, "Infrared absorption of hydrogen-related defects in ammonothermal GaN", Applied Physics Letters, vol. 108, no. 20: AIP Publishing, pp. 202105, 2016.
Marcinkevičius, S., T. K. Uždavinys, H. M. Foronda, D. A. Cohen, C. Weisbuch, and J. S. Speck, "Intervalley energy of GaN conduction band measured by femtosecond pump-probe spectroscopy", Physical Review B, vol. 94, no. 23: American Physical Society, pp. 235205, 2016.
Eisele, H., J. Schuppang, M. Schnedler, M. Duchamp, C. Nenstiel, V. Portz, T. Kure, M. Bügler, A. Lenz, M. Dähne, et al., "Intrinsic electronic properties of high-quality wurtzite InN", Physical Review B, vol. 94, no. 24: American Physical Society, pp. 245201, 2016.
Fireman, M. N., D. A. Browne, U. K. Mishra, and J. S. Speck, "Isotype InGaN/GaN heterobarrier diodes by ammonia molecular beam epitaxy", Journal of Applied Physics, vol. 119, no. 5: AIP Publishing, pp. 055709, 2016.
Lee, C. Hoon, J. S. Speck, H. San Kim, J. Jo Kim, S. Han Kim, and J. Ho Lee, Light emitting device for AC power operation, 2016.
Feneberg, M., J. Nixdorf, C. Lidig, R. Goldhahn, Z. Galazka, O. Bierwagen, and J. S. Speck, "Many-electron effects on the dielectric function of cubic In 2 O 3: Effective electron mass, band nonparabolicity, band gap renormalization, and Burstein-Moss shift", Physical Review B, vol. 93, no. 4: APS, pp. 045203, 2016.
Becerra, D. L., L. Y. Kuritzky, J. Nedy, A. Saud Abbas, A. Pourhashemi, R. M. Farrell, D. A. Cohen, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (20 2\= 1\=) III-nitride laser diodes with chemically assisted ion beam etched facets", Applied Physics Letters, vol. 108, no. 9: AIP Publishing, pp. 091106, 2016.

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