Publications
] , "High brightness blue InGaN/GaN light emitting diode on nonpolar m-plane bulk GaN substrate", Japanese Journal of Applied Physics, vol. 46, no. 10L: IOP Publishing, pp. L960, 2007.
, "High brightness violet InGaN/GaN light emitting diodes on semipolar (1011) bulk GaN substrates", Japanese Journal of Applied Physics, vol. 46, no. 2L: IOP Publishing, pp. L129, 2007.
, "High Brightness Violet InGaN/GaN Light Emitting Diodes on Semipolar (101̄1̄) Bulk GaN Substrates", Japanese Journal of Applied Physics, vol. 46, pp. L129-L131, 2007.
, "High electron mobility GaN grown under N-rich conditions by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 91, no. 22: AIP, pp. 221905, 2007.
, "High power and high efficiency blue light emitting diode on freestanding semipolar (10 1 1) bulk GaN substrate", Applied physics letters, vol. 90, no. 23: AIP, pp. 233504, 2007.
, "High power and high efficiency green light emitting diode on free-standing semipolar (112̅2) bulk GaN substrate", physica status solidi (RRL)-Rapid Research Letters, vol. 1, no. 4: WILEY-VCH Verlag, pp. 162–164, 2007.
, "High Power and High External Efficiency m-Plane InGaN LEDs", The European Conference on Lasers and Electro-Optics: Optical Society of America, pp. CE3_3, 2007.
, "High power and high external efficiency m-plane InGaN light emitting diodes", Japanese journal of applied physics, vol. 46, no. 2L: IOP Publishing, pp. L126, 2007.
, "Impact of $$\backslash$hbox ${$CF$}$ _ ${$4$}$ $ Plasma Treatment on GaN", IEEE Electron Device Letters, vol. 28, no. 9: IEEE, pp. 781–783, 2007.
, "Impact of strain on free-exciton resonance energies in wurtzite AlN", Journal of Applied Physics, vol. 102, no. 12: AIP, pp. 123707, 2007.
, "Impact of substrate miscut on the characteristic of m-plane InGaN/GaN light emitting diodes", Japanese Journal of Applied Physics, vol. 46, no. 12L: IOP Publishing, pp. L1117, 2007.
, "Impacts of dislocation bending and impurity incorporation on the local cathodoluminescence spectra of GaN grown by ammonothermal method", Applied Physics Letters, vol. 91, no. 25: AIP, pp. 251911, 2007.
, "Improved electroluminescence on nonpolar m-plane InGaN/GaN quantum wells LEDs", physica status solidi (RRL)-Rapid Research Letters, vol. 1, no. 3: Wiley Online Library, pp. 125–127, 2007.
, "In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001) GaN", Applied Physics Letters, vol. 91, no. 16: AIP, pp. 161904, 2007.
, "Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition", Journal of Applied Physics, vol. 102, no. 8: AIP, pp. 083546, 2007.
, "LASERS, OPTICS, AND OPTOELECTRONICS", J. Appl. Phys, vol. 101, no. 3, 2007.
, "Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy", Applied physics letters, vol. 90, no. 12: AIP, pp. 122116, 2007.
, "Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth", Applied Physics Letters, vol. 91, no. 23: AIP, pp. 232103, 2007.
, "On the Mechanism of Dislocation and Stacking Fault Formation in a-plane GaN Films Grown by Hydride Vapor Phase Epitaxy", AIP Conference Proceedings, vol. 893, no. 1: AIP, pp. 341–342, 2007.
, "Metalorganic chemical vapor deposition regrowth of InGaN and GaN on N-polar pillar and stripe nanostructures", Japanese journal of applied physics, vol. 46, no. 3L: IOP Publishing, pp. L230, 2007.
, "MOCVD regrowth of InGaN on N-polar and Ga-polar pillar and stripe nanostructures", physica status solidi (b), vol. 244, no. 6: Wiley Online Library, pp. 1802–1805, 2007.
, "N-face high electron mobility transistors with a GaN-spacer", physica status solidi (a), vol. 204, no. 6: Wiley Online Library, pp. 2049–2053, 2007.
, "Nonpolar gallium nitride laser diodes are the next new blue", Laser focus world, vol. 43, no. 10: Pennwell, 2007.
, "N-polar Ga N/ Al Ga N/ Ga N high electron mobility transistors", Journal of Applied Physics, vol. 102, no. 4: AIP, pp. 044501, 2007.
, "N-polar GaN Electronics", Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on: IEEE, pp. 368–368, 2007.