Publications
] , "Liquid Precursor Route for Hetero-epitaxy of Zr (Y) O2 Thin Films on (001) Cubic Zirconia", Journal of the American Ceramic Society, vol. 76, no. 2: Wiley Online Library, pp. 443–448, 1993.
, "Low temperature/low pressure hydrothermal synthesis of barium titanate: powder and heteroepitaxial thin films", Journal of materials research, vol. 10, no. 7: Cambridge University Press, pp. 1784–1789, 1995.
, "Lattice Engineering Using Lateral Oxidation of Alas: an Approach to Generate Substrates With New Lattice Constants", MRS Online Proceedings Library Archive, vol. 535: Cambridge University Press, 1998.
, "Lateral ordering of quantum dots by periodic subsurface stressors", Applied physics letters, vol. 74, no. 16: AIP, pp. 2280–2282, 1999.
, "LASERS, OPTICS, AND OPTOELECTRONICS-Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire", Applied Physics Letters, vol. 76, no. 5: New York [etc.] American Institute of Physics., pp. 529–531, 2000.
, "Layer-by-layer growth of GaN induced by silicon", Applied Physics Letters, vol. 77, no. 11: AIP, pp. 1626–1628, 2000.
, "Lateral oxidation kinetics of AlAsSb and related alloys lattice matched to InP", Journal of Applied Physics, vol. 89, no. 4: AIP, pp. 2458–2464, 2001.
, "Localized variations in electronic structure of AlGaN/GaN heterostructures grown by molecular-beam epitaxy", Applied Physics Letters, vol. 79, no. 17: AIP, pp. 2749–2751, 2001.
, "LASERS, OPTICS, AND OPTOELECTRONICS", Appl. Phys. Lett, vol. 85, no. 22, pp. 5391, 2004.
, Low Noise Amplifiers Based on Lattice Engineered Substrates: DTIC Document, 2004.
, "LASERS, OPTICS, AND OPTOELECTRONICS", Appl. Phys. Lett, vol. 87, no. 23, pp. 234101, 2005.
, "Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques", Applied Physics Letters, vol. 86, no. 2: AIP, pp. 021914, 2005.
, "LiNbO 3 thin film growth on (0001)-GaN", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 1: AVS, pp. 162–167, 2005.
, "Localized exciton dynamics in nonpolar (11 2\= 0) In x Ga 1- x N multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth", Applied Physics Letters, vol. 86, no. 15: AIP, pp. 151918, 2005.
, "LASERS, OPTICS, AND OPTOELECTRONICS", J. Appl. Phys, vol. 101, no. 3, 2007.
, "Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy", Applied physics letters, vol. 90, no. 12: AIP, pp. 122116, 2007.
, "Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth", Applied Physics Letters, vol. 91, no. 23: AIP, pp. 232103, 2007.
, "Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth", Applied Physics Letters, vol. 93, no. 14: AIP, pp. 142108, 2008.
, "Lateral epitaxial overgrowth of (0001) AlN on patterned sapphire using hydride vapor phase epitaxy", Applied Physics Letters, vol. 94, no. 12: AIP, pp. 121906, 2009.
, "List of Committee Members", Journal of Crystal Growth, vol. 311, pp. 2760, 2009.
, "Lattice tilt and misfit dislocations in (1122) semipolar GaN heteroepitaxy", Applied physics express, vol. 3, no. 1: IOP Publishing, pp. 011004, 2010.
, Light emitting device having a plurality of light emitting cells and method of fabricating the same, 2010.
, Light emitting device having a plurality of light emitting cells and method of fabricating the same, aug # " 10", 2010.
, "Linear and Nonlinear Device Modeling-Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer", IEEE Transactions on Microwave Theory and Techniques, vol. 58, no. 5, pp. 1077, 2010.
, "Low defect-mediated reverse-bias leakage in (0001) GaN via high-temperature molecular beam epitaxy", Applied Physics Letters, vol. 96, no. 10: AIP, pp. 102111, 2010.