Publications

Found 110 results
Author Title Type [ Year(Asc)]
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2012
Matioli, E., S. Brinkley, K. M. Kelchner, Y-L. Hu, S. Nakamura, S. DenBaars, J. Speck, and C. Weisbuch, "High-brightness polarized light-emitting diodes", Light: Science & Applications, vol. 1, no. 8: Nature Publishing Group, pp. e22, 2012.
Pan, C-C., S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. Feezell, "High-power, low-efficiency-droop semipolar (2021) single-quantum-well blue light-emitting diodes", Applied Physics Express, vol. 5, no. 6: IOP Publishing, pp. 062103, 2012.
2011
Bierwagen, O., S. Choi, and J. S. Speck, "Hall and Seebeck profiling: Determining surface, interface, and bulk electron transport properties in unintentionally doped InN", Physical Review B, vol. 84, no. 23: APS, pp. 235302, 2011.
DenBaars, S. P., S. Nakamura, and J. S. Speck, High efficiency light emitting diode (LED), jun # " 7", 2011.
Lang, J., C. Neufeld, C. Hurni, S. Cruz, E. Matioli, U. Mishra, and J. Speck, "High External Quantum Efficiency and Fill-Factor InGaN-Based Solar Cells Grown by NH (3)-MBE", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Lang, J. R., CJ. Neufeld, CA. Hurni, SC. Cruz, E. Matioli, UK. Mishra, and JS. Speck, "High external quantum efficiency and fill-factor InGaN/GaN heterojunction solar cells grown by NH 3-based molecular beam epitaxy", Applied Physics Letters, vol. 98, no. 13: AIP, pp. 131115, 2011.
Matioli, E., C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, et al., "High internal and external quantum efficiency InGaN/GaN solar cells", Applied Physics Letters, vol. 98, no. 2: AIP, pp. 021102, 2011.
Zhao, Y., S. Tanaka, Q. Yan, C-Y. Huang, R. B. Chung, C-C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, et al., "High optical polarization ratio from semipolar (20 2\= 1\=) blue-green InGaN/GaN light-emitting diodes", Applied physics letters, vol. 99, no. 5: AIP, pp. 051109, 2011.
Farrell, R. M., C. J. Neufeld, S. C. Cruz, J. R. Lang, M. Iza, S. Keller, S. Nakamura, SP. DenBaars, UK. Mishra, and JS. Speck, "High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm", Applied Physics Letters, vol. 98, no. 20: AIP, pp. 201107, 2011.
Zhao, Y., S. Tanaka, R. Chung, C-C. Pan, K. Fujito, D. Feezell, J. Speck, S. DenBaars, and S. Nakamura, "Highly Polarized Spontaneous Emission from Semipolar(20-2-1) InGaN/GaN Light-Emitting Diodes", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Wang, Q. Jie, C. Yan, N. Yu, C. Pflügl, L. Diehl, F. Capasso, J. Unterhinninghofen, J. Wiersig, T. Edamura, and M. Yamanishi, "Highly unidirectional whispering gallery mode lasers", Conference on Lasers and Electro-Optics/Pacific Rim: Optical Society of America, pp. J143, 2011.
Raring, J. W., M. C. Schmidt, C. Poblenz, B. Li, Y-C. Chang, M. J. Mondry, Y-. Da Lin, M. R. Krames, R. Craig, J. S. Speck, et al., "High-performance blue and green laser diodes based on nonpolar/semipolar bulk GaN substrates", Gallium Nitride Materials and Devices Vi, vol. 7939: International Society for Optics and Photonics, pp. 79390Y, 2011.
Schmidt, M. C., C. Poblenz, Y-C. Chang, B. Li, M. J. Mondry, J. Iveland, M. R. Krames, R. Craig, J. W. Raring, J. S. Speck, et al., "High-performance blue and green laser diodes based on nonpolar/semipolar GaN substrates", Laser Technology for Defense and Security VII, vol. 8039: International Society for Optics and Photonics, pp. 80390D, 2011.
Farrell, RM., DA. Haeger, PS. Hsu, MC. Schmidt, K. Fujito, DF. Feezell, SP. DenBaars, JS. Speck, and S. Nakamura, "High-power blue-violet AlGaN-cladding-free m-plane InGaN/GaN laser diodes", Applied Physics Letters, vol. 99, no. 17: AIP, pp. 171113, 2011.
Zhao, Y., S. Tanaka, C-C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High-power blue-violet semipolar (2021) InGaN/GaN light-emitting diodes with low efficiency droop at 200 A/cm2", Applied physics express, vol. 4, no. 8: IOP Publishing, pp. 082104, 2011.
2010
Saito, M., S. P. DenBaars, J. S. Speck, and S. Nakamura, Hexagonal wurtzite single crystal and hexagonal wurtzite single crystal substrate, 2010.
Bierwagen, O., and J. S. Speck, "High electron mobility In 2 O 3 (001) and (111) thin films with nondegenerate electron concentration", Applied Physics Letters, vol. 97, no. 7: AIP, pp. 072103, 2010.
Matioli, E., B. Fleury, E. Rangel, T. Melo, E. Hu, J. Speck, and C. Weisbuch, "High extraction efficiency GaN-based photonic-crystal light-emitting diodes: Comparison of extraction lengths between surface and embedded photonic crystals", Applied physics express, vol. 3, no. 3: IOP Publishing, pp. 032103, 2010.
Matioli, E., E. Rangel, M. Iza, B. Fleury, N. Pfaff, J. Speck, E. Hu, and C. Weisbuch, "High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals", Applied physics letters, vol. 96, no. 3: AIP, pp. 031108, 2010.
Da Lin, Y-., S. Yamamoto, C-Y. Huang, C-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High quality InGaN/AlGaN multiple quantum wells for semipolar InGaN green laser diodes", Applied Physics Express, vol. 3, no. 8: IOP Publishing, pp. 082001, 2010.
Da Lin, Y-., S. Yamamoto, C-Y. Huang, C-L. Hsiung, F. Wu, K. Fujito, H. Ohta, J. S. Speck, S. P. DenBaars, and S. Nakamura, "High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes", Applied Physics Express, vol. 3, pp. 082001, 2010.
Raring, J. W., M. C. Schmidt, C. Poblenz, Y-C. Chang, M. J. Mondry, B. Li, J. Iveland, B. Walters, M. R. Krames, R. Craig, et al., "High-efficiency blue and true-green-emitting laser diodes based on non-c-plane oriented GaN substrates", Applied physics express, vol. 3, no. 11: IOP Publishing, pp. 112101, 2010.
Speck, J., E. Hu, C. Weisbuch, Y-S. Choi, K. McGroddy, G. Koblmüller, E. Matioli, E. Rangel, F. Rol, and D. Simeonov, High-Efficiency Nitride-Base Photonic Crystal Light Sources: The Regents Of The University Of California, 2010.
Raring, J. W., E. M. Hall, M. C. Schmidt, C. Poblenz, B. Li, N. Pfister, D. F. Feezell, R. Craig, J. S. Speck, S. P. DenBaars, et al., "High-power high-efficiency continuous-wave InGaN laser diodes in the violet, blue, and green wavelength regimes", Gallium Nitride Materials and Devices V, vol. 7602: International Society for Optics and Photonics, pp. 760218, 2010.
Koblmüller, G., RM. Chu, A. Raman, UK. Mishra, and JS. Speck, "High-temperature molecular beam epitaxial growth of AlGaN/GaN on GaN templates with reduced interface impurity levels", Journal of Applied Physics, vol. 107, no. 4: AIP, pp. 043527, 2010.

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