Publications

Found 83 results
Author Title Type [ Year(Desc)]
Filters: First Letter Of Title is G  [Clear All Filters]
1992
Williams, KE., EJ. Tarsa, and JS. Speck, "Growth of InAs on diamond (001) by molecular beam epitaxy", Applied physics letters, vol. 61, no. 4: AIP, pp. 405–407, 1992.
1993
Tarsa, EJ., M. De Graef, DR. Clarke, AC. Gossard, and JS. Speck, "Growth and characterization of (111) and (001) oriented MgO films on (001) GaAs", Journal of applied physics, vol. 73, no. 7: AIP, pp. 3276–3283, 1993.
1995
Tarsa, EJ., XH. Wu, JP. Ibbetson, JS. Speck, and JJ. Zinck, "Growth of epitaxial MgO films on Sb-passivated (001) GaAs: Properties of the MgO/GaAs interface", Applied physics letters, vol. 66, no. 26: AIP, pp. 3588–3590, 1995.
1996
Tarsa, EJ., EA. Hachfeld, FT. Quinlan, JS. Speck, and M. Eddy, "Growth-related stress and surface morphology in homoepitaxial SrTiO3 films", Applied physics letters, vol. 68, no. 4: AIP, pp. 490–492, 1996.
1999
Xuehua, W., JS. Speck, and W. Ziqin, "Growth of High Quality Epitaxial GaN Thin Films", WULI-BEIJING-, vol. 28: UNKNOWN, pp. 44–50, 1999.
2000
Kawakami, RK., E. Johnston-Halperin, LF. Chen, M. Hanson, N. Guebels, JS. Speck, AC. Gossard, and DD. Awschalom, "(Ga, Mn) As as a digital ferromagnetic heterostructure", Applied Physics Letters, vol. 77, no. 15: AIP, pp. 2379–2381, 2000.
Moran, B., M. Hansen, MD. Craven, JS. Speck, and SP. DenBaars, "Growth and characterization of graded AlGaN conducting buffer layers on n+ SiC substrates", Journal of crystal growth, vol. 221, no. 1-4: North-Holland, pp. 301–304, 2000.
2001
McCarthy, L. S., I. P. Smorchkova, H. Xing, P. Kozodoy, P. Fini, J. Limb, D. L. Pulfrey, J. S. Speck, M. J. W. Rodwell, SP. DenBaars, et al., "GaN HBT: toward an RF device", IEEE Transactions on Electron Devices, vol. 48, no. 3: IEEE, pp. 543–551, 2001.
2002
Davis, R. F., A. M. Roskowski, E. A. Preble, J. S. Speck, B. Heying, J. A. Freitas, EVAN. R. Glaser, and WILLIAM. E. Carlos, "Gallium nitride materials-progress, status, and potential roadblocks", Proceedings of the IEEE, vol. 90, no. 6: IEEE, pp. 993–1005, 2002.
Kawakami, RK., E. Johnston-Halperin, LF. Chen, M. Hanson, N. Guebels, JM. Stephens, JS. Speck, AC. Gossard, and DD. Awschalom, "Growth and magnetic properties of (Ga, Mn) As as digital ferromagnetic heterostructures", Materials Science and Engineering: B, vol. 88, no. 2-3: Elsevier, pp. 209–212, 2002.
2003
DenBaars, SP., T. Katona, P. Cantu, A. Hanlon, S. Keller, M. Schmidt, T. Margalith, M. Pattisson, C. Moe, J. Speck, et al., "GaN based high brightness LEDs and UV LEDs", Electron Devices Meeting, 2003. IEDM'03 Technical Digest. IEEE International: IEEE, pp. 16–1, 2003.
Shen, L., S. Heikman, Y. Wu, D. Buttari, R. Coffie, A. Chini, L. McCarthy, S. Keller, J. Speck, and U. Mishra, "GaN/AlGaN/GaN heterostructure and its application to the dispersion removal in HEMTs", Abstracts of 2003 MRS Spring Meeting, pp. 81, 2003.
Katona, TM., T. Margalith, C. Moe, MC. Schmidt, S. Nakamura, JS. Speck, and SP. DenBaars, "Growth and fabrication of short-wavelength UV LEDs [5187-31]", PROCEEDINGS-SPIE THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING: International Society for Optical Engineering; 1999, pp. 250–259, 2003.
2004
McLaurin, M., B. Haskell, S. Nakamura, and JS. Speck, "Gallium adsorption onto (1120) gallium nitride surfaces", Journal of applied physics, vol. 96, no. 1: AIP, pp. 327–334, 2004.
Brown, J., F. Wu, PM. Petroff, and JS. Speck, "GaN quantum dot density control by rf-plasma molecular beam epitaxy", Applied physics letters, vol. 84, no. 5: AIP, pp. 690–692, 2004.
Katona, T. M., T. Margalith, C. Moe, M. C. Schmidt, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Growth and fabrication of short-wavelength UV LEDs", Third International Conference on Solid State Lighting, vol. 5187: International Society for Optics and Photonics, pp. 250–260, 2004.
Kaeding, J. F., Y. Wu, T. Fujii, R. Sharma, P. T. Fini, J. S. Speck, and S. Nakamura, "Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes", Journal of crystal growth, vol. 272, no. 1-4: North-Holland, pp. 257–263, 2004.
Fujito, K., T. Hashimoto, K. Samonji, J. S. Speck, and S. Nakamura, "Growth of A1N by the chemical vapor reaction process and its application to lateral overgrowth on patterned sapphire substrates", Journal of crystal growth, vol. 272, no. 1-4: North-Holland, pp. 370–376, 2004.
2005
Koblmüller, G., J. Brown, R. Averbeck, H. Riechert, P. Pongratz, and J. S. Speck, "Ga adlayer governed surface defect evolution of (0001) GaN films grown by plasma-assisted molecular beam epitaxy", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L906, 2005.
Hashimoto, T., K. Fujino, F. Wu, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "GaN and Related Alloys", MRS Symposia, vol. 831, Pittsburgh, Materials Research Society, 2005.
Chakraborty, A., "Growth and characterization of semipolar InGaN/GaN multiple quantum wells and light-emitting diodes on (10 1 1) GaN templates", MRS Online Proceedings Library Archive, vol. 892: Cambridge University Press, 2005.
Rajan, S., M. Wong, Y. Fu, F. Wu, JS. Speck, and UK. Mishra, "Growth and electrical characterization of N-face AlGaN/GaN heterostructures", Japanese journal of applied physics, vol. 44, no. 11L: IOP Publishing, pp. L1478, 2005.
Hashimoto, T., K. Fujito, K. Samonji, J. S. Speck, and S. Nakamura, "Growth of AlN by the chemical vapor reaction process", Japanese journal of applied physics, vol. 44, no. 2R: IOP Publishing, pp. 869, 2005.
Hashimoto, T., K. Fujito, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "Growth of gallium nitride via fluid transport in supercritical ammonia", Journal of Crystal Growth, vol. 275, no. 1-2: North-Holland, pp. e525–e530, 2005.
2006
Brown, J. S., G. Koblmüller, F. Wu, R. Averbeck, H. Riechert, and J. S. Speck, "Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and reflection high-energy electron diffraction", Journal of applied physics, vol. 99, no. 7: AIP, pp. 074902, 2006.

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