Publications
] , Method of improving surface morphology of (Ga, Al, In, B) N thin films and devices grown on nonpolar or semipolar (Ga, Al, In, B) N substrates, aug # " 5", 2014.
, "Surface structured optical coatings with near-perfect broadband and wide-angle antireflective properties", Nano letters, vol. 14, no. 10: ACS Publications, pp. 5960–5964, 2014.
, "Valence band states and polarized optical emission from nonpolar and semipolar III–nitride quantum well optoelectronic devices", Japanese Journal of Applied Physics, vol. 53, no. 10: IOP Publishing, pp. 100206, 2014.
, "Comparison of Polished and Dry Etched Semipolar $(11$\backslash$bar ${$2$}$ 2) $ III-Nitride Laser Facets", IEEE Photonics Technology Letters, vol. 25, no. 21: IEEE, pp. 2105–2107, 2013.
, "Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well III–nitride light-emitting diodes", Applied Physics Express, vol. 6, no. 5: IOP Publishing, pp. 052103, 2013.
, "Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells", Japanese Journal of Applied Physics, vol. 52, no. 8S: IOP Publishing, pp. 08JC10, 2013.
, "InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
, Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers, 2013.
, "Study of temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
, "Temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy", CLEO: Science and Innovations: Optical Society of America, pp. CTh1M–7, 2013.
, Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes, 2012.
, "Design of integrated III-nitride/non-III-nitride tandem photovoltaic devices", Journal of Applied Physics, vol. 111, no. 5: AIP, pp. 054503, 2012.
, "Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells", Applied Physics Letters, vol. 100, no. 16: AIP, pp. 161101, 2012.
, Iii-nitride flip-chip solar cells, jul # " 19", 2012.
, Textured iii-v semiconductor, may # " 3", 2012.
, "AlGaN-cladding-free m-plane InGaN/GaN laser diodes with p-type AlGaN etch stop layers", Applied physics express, vol. 4, no. 9: IOP Publishing, pp. 092105, 2011.
, "Blue InGaN/GaN laser diodes grown on (33$$\backslash$bar 3$\backslash$bar 1$) free-standing GaN substrates", physica status solidi (c), vol. 8, no. 7-8: WILEY-VCH Verlag, pp. 2390–2392, 2011.
, "Effect of doping and polarization on carrier collection in InGaN quantum well solar cells", Applied Physics Letters, vol. 98, no. 24: AIP, pp. 243507, 2011.
, "High internal and external quantum efficiency InGaN/GaN solar cells", Applied Physics Letters, vol. 98, no. 2: AIP, pp. 021102, 2011.
, "InGaN-Based Solar Cells for Ultrahigh Efficiency Multijunction Solar Cell Applications", UC Solar Symposlum, 2011.
, "Near UV AlGaN-cladding free nonpolar InGaN/GaN laser diodes", Device Research Conference (DRC), 2011 69th Annual: IEEE, pp. 261–262, 2011.
, "Observation of positive thermal power coefficient in InGaN/GaN quantum well solar cells", Applied Physics Letters, vol. 99, no. 7: AIP, pp. 071104, 2011.