Publications

Found 61 results
Author Title Type [ Year(Desc)]
Filters: Author is Farrell, Robert M  [Clear All Filters]
2013
Hsu, P. Shan, R. M. Farrell, J. J. Weaver, K. Fujito, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Comparison of Polished and Dry Etched Semipolar $(11$\backslash$bar ${$2$}$ 2) $ III-Nitride Laser Facets", IEEE Photonics Technology Letters, vol. 25, no. 21: IEEE, pp. 2105–2107, 2013.
Kawaguchi, Y., S-C. Huang, R. M. Farrell, Y. Zhao, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Dependence of electron overflow on emission wavelength and crystallographic orientation in single-quantum-well III–nitride light-emitting diodes", Applied Physics Express, vol. 6, no. 5: IOP Publishing, pp. 052103, 2013.
Keller, S., R. M. Farrell, M. Iza, Y. Terao, N. Young, U. K. Mishra, S. Nakamura, S. P. DenBaars, and J. S. Speck, "Influence of the structure parameters on the relaxation of semipolar InGaN/GaN multi quantum wells", Japanese Journal of Applied Physics, vol. 52, no. 8S: IOP Publishing, pp. 08JC10, 2013.
Farrell, R. M., D. J. Friedman, NG. Young, EE. Perl, N. Singh, , CJ. Neufeld, M. Iza, SC. Cruz, S. Keller, et al., "InGaN-based solar cells and high-performance broadband optical coatings for ultrahigh efficiency hybrid multijunction device designs", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
Farrell, R. M., M. C. Schmidt, K. Choong Kim, H. Masui, D. F. Feezell, J. S. Speck, S. P. DenBaars, and S. Nakamura, Optimization of laser bar orientation for nonpolar and semipolar (Ga, Al, In, B) N diode lasers, 2013.
Connelly, B. C., N. T. Woodward, G. D. Metcalfe, L. E. Rodak, N. C. Das, M. L. Reed, A. V. Sampath, H. Shen, M. Wraback, R. M. Farrell, et al., "Study of temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy", Lasers and Electro-Optics (CLEO), 2013 Conference on: IEEE, pp. 1–2, 2013.
Connelly, B., N. Woodward, G. D. Metcalfe, L. E. Rodak, N. C. Das, M. Reed, A. V. Sampath, H. Shen, M. Wraback, R. M. Farrell, et al., "Temperature-dependent carrier transport in a p-GaN/i-InGaN/n-GaN solar cell heterostructure using ultrafast spectroscopy", CLEO: Science and Innovations: Optical Society of America, pp. CTh1M–7, 2013.
2014
Farrell, R. M., M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, METHOD OF IMPROVING SURFACE MORPHOLOGY OF (Ga, Al, In, B) N THIN FILMS AND DEVICES GROWN ON NONPOLAR OR SEMIPOLAR (Ga, Al, In, B) N SUBSTRATES, 2014.
Farrell, R. M., M. Iza, J. S. Speck, S. P. DenBaars, and S. Nakamura, Method of improving surface morphology of (Ga, Al, In, B) N thin films and devices grown on nonpolar or semipolar (Ga, Al, In, B) N substrates, aug # " 5", 2014.
Perl, E. E., W. E. McMahon, R. M. Farrell, S. P. DenBaars, J. S. Speck, and J. E. Bowers, "Surface structured optical coatings with near-perfect broadband and wide-angle antireflective properties", Nano letters, vol. 14, no. 10: ACS Publications, pp. 5960–5964, 2014.
Zhao, Y., R. M. Farrell, Y-R. Wu, and J. S. Speck, "Valence band states and polarized optical emission from nonpolar and semipolar III–nitride quantum well optoelectronic devices", Japanese Journal of Applied Physics, vol. 53, no. 10: IOP Publishing, pp. 100206, 2014.
2015
Lee, C., C. Shen, H. M. Oubei, M. Cantore, B. Janjua, T. Khee Ng, R. M. Farrell, M. M. El-Desouki, J. S. Speck, S. Nakamura, et al., "2 Gbit/s data transmission from an unfiltered laser-based phosphor-converted white lighting communication system", Optics express, vol. 23, no. 23: Optical Society of America, pp. 29779–29787, 2015.
Lee, C., C. Zhang, M. Cantore, R. M. Farrell, S. Ho Oh, T. Margalith, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, "4 Gbps direct modulation of 450 nm GaN laser for high-speed visible light communication", Optics express, vol. 23, no. 12: Optical Society of America, pp. 16232–16237, 2015.
Feezell, D. F., M. C. Schmidt, K-C. Kim, R. M. Farrell, D. A. Cohen, J. S. Speck, S. P. DenBaars, and S. Nakamura, Al (x) Ga (1-x) N-cladding-free nonpolar III-nitride based laser diodes and light emitting diodes, may # " 26", 2015.
Megalini, L., D. L. Becerra, R. M. Farrell, A. Pourhashemi, J. S. Speck, S. Nakamura, S. P. DenBaars, and D. A. Cohen, "Continuous-wave operation of a InGaN laser diode with a photoelectrochemically etched current aperture", Applied Physics Express, vol. 8, no. 4: IOP Publishing, pp. 042701, 2015.
Yonkee, B. P., R. M. Farrell, J. T. Leonard, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Demonstration of low resistance ohmic contacts to p-type (202Ø1Ø) GaN", Semiconductor Science and Technology, vol. 30, no. 7: IOP Publishing, pp. 075007, 2015.
Nedy, J. G., N. G. Young, K. M. Kelchner, Y. Hu, R. M. Farrell, S. Nakamura, S. P. DenBaars, C. Weisbuch, and J. S. Speck, "Low damage dry etch for III-nitride light emitters", Semiconductor Science and Technology, vol. 30, no. 8: IOP Publishing, pp. 085019, 2015.
Hsu, P. Shan, K. M. Kelchner, R. M. Farrell, D. A. Haeger, H. Ohta, A. Tyagi, S. Nakamura, S. P. DenBaars, and J. S. Speck, Semi-polar iii-nitride optoelectronic devices on m-plane substrates with miscuts less than+/-15 degrees in the c-direction, 2015.
2016
Kowsz, S. J., C. D. Pynn, F. Wu, R. M. Farrell, J. S. Speck, S. P. DenBaars, and S. Nakamura, "Designing optically pumped InGaN quantum wells with long wavelength emission for a phosphor-free device with polarized white-light emission", Gallium Nitride Materials and Devices XI, vol. 9748: International Society for Optics and Photonics, pp. 97481Z, 2016.
Hwang, D., B. Yonkee, R. M. Farrell, S. Nakamura, J. S. Speck, and S. P. DenBaars, "Development of c-plane thin-film flip-chip LEDs fabricated by photoelectrochemical (PEC) liftoff", Compound Semiconductor Week (CSW)[Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS), 2016: IEEE, pp. 1–1, 2016.
Lee, C., C. Zhang, D. L. Becerra, S. Lee, C. A. Forman, S. Ho Oh, R. M. Farrell, J. S. Speck, S. Nakamura, J. E. Bowers, et al., "Dynamic characteristics of 410 nm semipolar (20 2 1) iii-nitride laser diodes with a modulation bandwidth of over 5 ghz", Applied Physics Letters, vol. 109, no. 10: AIP Publishing, pp. 101104, 2016.
Alhassan, A. I., R. M. Farrell, B. Saifaddin, A. Mughal, F. Wu, S. P. DenBaars, S. Nakamura, and J. S. Speck, "High luminous efficacy green light-emitting diodes with AlGaN cap layer", Optics express, vol. 24, no. 16: Optical Society of America, pp. 17868–17873, 2016.
Cantore, M., N. Pfaff, R. M. Farrell, J. S. Speck, S. Nakamura, and S. P. DenBaars, "High luminous flux from single crystal phosphor-converted laser-based white lighting system", Optics Express, vol. 24, no. 2: Optical Society of America, pp. A215–A221, 2016.
Pourhashemi, A., R. M. Farrell, S. P. DenBaars, J. S. Speck, and S. Nakamura, High power blue-violet III-nitride semipolar laser diodes, may # " 31", 2016.
Lee, C., C. Zhang, D. Becerra, S. Lee, S. Ho Oh, R. M. Farrell, J. S. Speck, S. Nakamura, J. E. Bowers, and S. P. DenBaars, "High speed performance of III-nitride laser diode grown on (2021) semipolar plane for visible light communication", Photonics Conference (IPC), 2016 IEEE: IEEE, pp. 809–810, 2016.

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