Publications

Found 119 results
Author Title Type [ Year(Asc)]
Filters: Author is Wu, Feng  [Clear All Filters]
2007
Chakraborty, A., B. A. Haskell, F. Wu, S. Keller, S. P. DenBaars, S. Nakamura, J. S. Speck, and U. K. Mishra, "Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films", Japanese Journal of Applied Physics, vol. 46, no. 2R: IOP Publishing, pp. 542, 2007.
Kim, K-C., M. C. Schmidt, H. Sato, F. Wu, N. Fellows, Z. Jia, M. Saito, S. Nakamura, S. P. DenBaars, J. S. Speck, et al., "Study of nonpolar m-plane In Ga N/ Ga N multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition", Applied Physics Letters, vol. 91, no. 18: AIP, pp. 181120, 2007.
2006
Baker, T. J., B. A. Haskell, F. Wu, J. S. Speck, and S. Nakamura, "Characterization of planar semipolar gallium nitride films on sapphire substrates", Japanese Journal of Applied Physics, vol. 45, no. 2L: IOP Publishing, pp. L154, 2006.
Keller, S., N. Fichtenbaum, F. Wu, G. Lee, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H–SiC", Japanese journal of applied physics, vol. 45, no. 3L: IOP Publishing, pp. L322, 2006.
Brown, J. S., G. Koblmüller, F. Wu, R. Averbeck, H. Riechert, and J. S. Speck, "Ga adsorbate on (0001) GaN: In situ characterization with quadrupole mass spectrometry and reflection high-energy electron diffraction", Journal of applied physics, vol. 99, no. 7: AIP, pp. 074902, 2006.
Imer, B. M., F. Wu, S. P. DenBaars, and J. S. Speck, "Improved quality (11 2\= 0) a-plane GaN with sidewall lateral epitaxial overgrowth", Applied physics letters, vol. 88, no. 6: AIP, pp. 061908, 2006.
Brown, J. S., P. M. Petroff, F. Wu, and J. S. Speck, "Optical properties of GaN/AlN (0001) quantum dots grown by plasma-assisted molecular beam epitaxy", Japanese journal of applied physics, vol. 45, no. 7L: IOP Publishing, pp. L669, 2006.
Imer, B., F. Wu, M. D. Craven, J. S. Speck, and S. P. DenBaars, "Stability of (1100) m-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition", Japanese journal of applied physics, vol. 45, no. 11R: IOP Publishing, pp. 8644, 2006.
Chakraborty, A., K. Choong Kim, F. Wu, B. A. Haskell, S. Keller, J. S. Speck, S. Nakamura, S. P. DenBaars, and U. K. Mishra, "Structural and electroluminescence characteristics of nonpolar light-emitting diodes fabricated on lateral epitaxially overgrown a-Plane GaN", Japanese journal of applied physics, vol. 45, no. 11R: IOP Publishing, pp. 8659, 2006.
2005
Baker, T. J., B. A. Haskell, F. Wu, P. T. Fini, J. S. Speck, and S. Nakamura, "Characterization of planar semipolar gallium nitride films on spinel substrates", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L920, 2005.
Hashimoto, T., K. Fujino, F. Wu, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "GaN and Related Alloys", MRS Symposia, vol. 831, Pittsburgh, Materials Research Society, 2005.
Rajan, S., M. Wong, Y. Fu, F. Wu, JS. Speck, and UK. Mishra, "Growth and electrical characterization of N-face AlGaN/GaN heterostructures", Japanese journal of applied physics, vol. 44, no. 11L: IOP Publishing, pp. L1478, 2005.
Haskell, B. A., A. Chakraborty, F. Wu, H. Sasano, P. T. Fini, S. P. DenBaars, J. S. Speck, and S. Nakamura, "Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy", Journal of electronic materials, vol. 34, no. 4: Springer-Verlag, pp. 357–360, 2005.
Chakraborty, A., T. J. Baker, B. A. Haskell, F. Wu, J. S. Speck, S. P. DenBaars, S. Nakamura, and U. K. Mishra, "Milliwatt power blue InGaN/GaN light-emitting diodes on semipolar GaN templates", Japanese journal of applied physics, vol. 44, no. 7L: IOP Publishing, pp. L945, 2005.
Sharma, R., M. P Pattison, T. J. Baker, B. A. Haskell, R. M. Farrell, H. Masui, F. Wu, S. P. DenBaars, J. S. Speck, and S. Nakamura, "A semipolar (10-1-3) InGaN/GaN green light emitting diode", MRS Online Proceedings Library Archive, vol. 892: Cambridge University Press, 2005.
Hashimoto, T., K. Fujito, F. Wu, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "Structural characterization of thick GaN films grown on free-standing GaN seeds by the ammonothermal method using basic ammonia", Japanese journal of applied physics, vol. 44, no. 6L: IOP Publishing, pp. L797, 2005.
2004
Hashimoto, T., K. Fujito, F. Wu, B. A. Haskell, P. T. Fini, J. S. Speck, and S. Nakamura, "Ammonothermal growth of GaN utilizing negative temperature dependence of solubility in basic ammonia", MRS Online Proceedings Library Archive, vol. 831: Cambridge University Press, 2004.
Waltereit, P., C. Poblenz, S. Rajan, F. Wu, U. K. Mishra, and J. S. Speck, "Structural properties of GaN buffer layers on 4H-SiC (0001) grown by plasma-assisted molecular beam epitaxy for high electron mobility transistors", Japanese journal of applied physics, vol. 43, no. 12A: IOP Publishing, pp. L1520, 2004.
2003
Craven, M. D., P. Waltereit, F. Wu, J. S. Speck, and S. P. DenBaars, "Characterization of a-plane GaN/(Al, Ga) N multiple quantum wells grown via metalorganic chemical vapor deposition", Japanese journal of applied physics, vol. 42, no. 3A: IOP Publishing, pp. L235, 2003.

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