Publications

Found 63 results
Author Title Type [ Year(Desc)]
Filters: Author is Speck, James  [Clear All Filters]
2010
Matioli, E., E. Rangel, M. Iza, B. Fleury, N. Pfaff, J. Speck, E. Hu, and C. Weisbuch, "High extraction efficiency light-emitting diodes based on embedded air-gap photonic-crystals", Applied physics letters, vol. 96, no. 3: AIP, pp. 031108, 2010.
Speck, J., E. Hu, C. Weisbuch, Y-S. Choi, K. McGroddy, G. Koblmüller, E. Matioli, E. Rangel, F. Rol, and D. Simeonov, High-Efficiency Nitride-Base Photonic Crystal Light Sources: The Regents Of The University Of California, 2010.
Matioli, E., B. Fleury, E. Rangel, E. Hu, J. Speck, and C. Weisbuch, "Measurement of extraction and absorption parameters in GaN-based photonic-crystal light-emitting diodes", Journal of applied physics, vol. 107, no. 5: AIP, pp. 053114, 2010.
Yang, C. Kai, P. Roblin, F. De Groote, S. A. Ringel, S. Rajan, J. Pierre Teyssier, C. Poblenz, Y. Pei, J. Speck, and U. K. Mishra, "Pulsed-IV pulsed-RF cold-FET parasitic extraction of biased AlGaN/GaN HEMTs using large signal network analyzer", IEEE transactions on microwave theory and techniques, vol. 58, no. 5: IEEE, pp. 1077–1088, 2010.
2011
Pimputkar, S., S. Kawabata, J. Speck, and S. Nakamura, "Bulk GaN Growth on GaN Seeds of Varying Orientations in Supercritical Basic Ammonia", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Zhang, Z., C. Hurni, A. Arehart, J. Speck, and S. Ringel, "Deep Traps in M-Plane GaN Grown by Ammonia MBE", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Sasikumar, A., A. Arehart, S. Kaun, M. Hoi Wong, J. Speck, U. Mishra, and S. Ringe, "Direct Correlation between EC-0. 57 eV Trap Generation and Field-Induced Degradation in AlGaN/GaN High Electron Mobility Transistors", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Lang, J., C. Neufeld, C. Hurni, S. Cruz, E. Matioli, U. Mishra, and J. Speck, "High External Quantum Efficiency and Fill-Factor InGaN-Based Solar Cells Grown by NH (3)-MBE", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Zhao, Y., S. Tanaka, R. Chung, C-C. Pan, K. Fujito, D. Feezell, J. Speck, S. DenBaars, and S. Nakamura, "Highly Polarized Spontaneous Emission from Semipolar(20-2-1) InGaN/GaN Light-Emitting Diodes", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Browne, D., E. Young, and J. Speck, "Investigation of Indium and Impurity Incorporation of InGaN Films on Polar, Nonpolar, and Semipolar GaN Orientations Grown by Ammonia MBE", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Hurni, C., P. Burke, J. Lang, B. McSkimming, E. Young, U. Mishra, and J. Speck, "Low temperature p-GaN grown by NH 3-MBE", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Hsu, P. Shan, E. Young, A. Romanov, K. Fujito, J. Speck, and S. Nakamura, "Misfit Dislocation Formation in Partially Strain-Relaxed(11-22) Semipolar InGaN", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Hardy, M., F. Wu, P. Shan Hsu, I. Koslow, E. Young, J. Speck, and S. DenBaars, "Observation of m-Plane Slip and Relaxation Orthogonal to the Projected c-Direction in(20-21) InGaN/GaN Partially Relaxed Layers", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Feezell, D., J. Speck, S. DenBaars, and S. Nakamura, "Optoelectronic Devices Grown on Nonpolar and Semipolar Free-Standing GaN Substrates", 2011 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2011, 01, 2011.
Matioli, E., S. Brinkley, K. M. Kelchner, S. Nakamura, S. DenBaars, J. Speck, and C. Weisbuch, "Polarized light extraction in m-plane GaN light-emitting diodes by embedded photonic-crystals", Applied Physics Letters, vol. 98, no. 25: AIP, pp. 251112, 2011.
Chung, R., E. Young, D. Haeger, S. DenBaars, J. Speck, and D. Cohen, "Semipolar AlGaN Buffers for Deep Ultraviolet Diode Lasers", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Koslow, I., M. Hardy, P-S. Hsu, E. Young, S. Nakamura, J. Speck, and S. DenBaars, "Strain Relaxation in Semipolar Nitrides for Optoelectronic Device Applications", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
Toledo, N., C. Neufeld, M. Scarpulla, T. Buehl, S. Cruz, A. Gossard, S. DenBaars, J. Speck, and U. Mishra, "Wafer Bonded GaAs-Sapphire for Photovoltaic Applications via Adhesive Bonding", Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States.[np]. Jun: Minerals, Metals and Materials Society/AIME, 420 Commonwealth Dr., P. O. Box 430 Warrendale PA 15086 United States, 2011.
2012
Jewell, J., D. Simeonov, S-C. Huang, Y-L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, "Double embedded photonic crystals for extraction of guided light in light-emitting diodes", Applied Physics Letters, vol. 100, no. 17: AIP, pp. 171105, 2012.
Matioli, E., S. Brinkley, K. M. Kelchner, Y-L. Hu, S. Nakamura, S. DenBaars, J. Speck, and C. Weisbuch, "High-brightness polarized light-emitting diodes", Light: Science & Applications, vol. 1, no. 8: Nature Publishing Group, pp. e22, 2012.
2013
Shivaraman, R., Y-R. Wu, S. Choi, R. Chung, and J. Speck, "Atom Probe Tomography of III-Nitrides Based Semiconducting Devices", Microscopy and Microanalysis, vol. 19, no. S2: Cambridge University Press, pp. 956–957, 2013.
DenBaars, SP., J. Speck, and S. Nakamura, "Energy savings potential of GaN LEDs for energy efficient lighting and future research directions", Asia Communications and Photonics Conference: Optical Society of America, pp. ATh2A–1, 2013.
D'evelyn, M. P., J. Speck, W. Houck, M. Schmidt, and A. Chakraborty, Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices, 2013.
Metcalfe, G., N. Woodward, H. Shen, M. Wraback, P. Shan Hsu, and J. Speck, "Photoreflectance and Strain Relaxation Studies of Semipolar InGaN", APS Meeting Abstracts, 2013.
Speck, J., "Progress in nonpolar and semipolar GaN-based LEDs and laser diodes", ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, vol. 246: AMER CHEMICAL SOC 1155 16TH ST, NW, WASHINGTON, DC 20036 USA, 2013.

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