Publications

Found 158 results
Author Title Type [ Year(Asc)]
Filters: Author is Mishra, Umesh K  [Clear All Filters]
2000
Elsass, C. R., I. P. Smorchkova, B. Heying, E. Haus, C. Poblenz, P. Fini, K. Maranowski, P. M. Petroff, S. P. DenBaars, U. K. Mishra, et al., "Electron transport in AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy", Japanese Journal of Applied Physics, vol. 39, no. 10B: IOP Publishing, pp. L1023, 2000.
1999
Chavarkar, P. M., L. Zhao, S. Keller, A. Fisher, J. S. Speck, and U. K. Mishra, "Strain relaxation in InxGa1-xAs lattice engineered substrates", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1050–1051, 1999.
1998
Keller, S., F. Cabané, MS. Minsky, X. Hui Wu, MP. Mack, J. S. Speck, E. Hu, LA. Coldren, U. K. Mishra, and S. P. DenBaars, "MOCVD growth and properties of InGaN/GaN multi-quantum wells", Materials Science Forum, vol. 264: Trans Tech Publications, pp. 1157–1160, 1998.
Abare, A. C., M. P. Mack, M. W. Hansen, K. R Sink, P. Kozodoy, S. L. Keller, E. L. Hu, J. S. Speck, J. Edward Bowers, U. K. Mishra, et al., "Pulsed operation of (Al, Ga, In) N blue laser diodes", In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, vol. 3284: International Society for Optics and Photonics, pp. 103–113, 1998.
1997
Mishra, U. K., P. Parikh, P. Chavarkar, J. Yen, J. Champlain, B. Thibeault, H. Reese, S. Stone Shi, E. Hu, L. Zhu, et al., "Oxide based compound semiconductor electronics", Electron Devices Meeting, 1997. IEDM'97. Technical Digest., International: IEEE, pp. 545–548, 1997.
1996
Keller, S., D. Kapolnek, B. P. Keller, Y. Wu, B. Heying, J. S. Speck, U. K. Mishra, and S. P. DenBaars, "Effect of the trimethylgallium flow during nucleation layer growth on the properties of GaN grown on sapphire", Japanese journal of applied physics, vol. 35, no. 3A: IOP Publishing, pp. L285, 1996.
Chen, C-H., E. L. Hu, U. K. Mishra, J. P. Ibbetson, X. Wu, and J. S. Speck, "Improvement in low energy ion-induced damage with a low temperature GaAs capping layer", Applied physics letters, vol. 69, no. 12: AIP, pp. 1728–1730, 1996.
1991
Singisetti, U., M. Hoi Wong, S. Dasgupta, J. S. Speck, and U. K. Mishra, "Proc. Bipolar Circuits and Technology Meet., 1991 Proc. Bipolar Circuits and Technology Meet., 1991 188, 1991", Proc. Bipolar Circuits and Technology Meet, vol. 188, 1991.

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