Publications

Found 18 results
Author Title Type [ Year(Desc)]
Filters: Author is Mishra, Umesh K and First Letter Of Title is P  [Clear All Filters]
1991
Singisetti, U., M. Hoi Wong, S. Dasgupta, J. S. Speck, and U. K. Mishra, "Proc. Bipolar Circuits and Technology Meet., 1991 Proc. Bipolar Circuits and Technology Meet., 1991 188, 1991", Proc. Bipolar Circuits and Technology Meet, vol. 188, 1991.
1998
Abare, A. C., M. P. Mack, M. W. Hansen, K. R Sink, P. Kozodoy, S. L. Keller, E. L. Hu, J. S. Speck, J. Edward Bowers, U. K. Mishra, et al., "Pulsed operation of (Al, Ga, In) N blue laser diodes", In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II, vol. 3284: International Society for Optics and Photonics, pp. 103–113, 1998.
2001
Xing, H., DS. Green, L. McCarthy, IP. Smorchkova, P. Chavarkar, T. Mates, S. Keller, S. DenBaars, J. Speck, and U. K. Mishra, "Progress in gallium nitride-based bipolar transistors", Bipolar/BiCMOS Circuits and Technology Meeting, Proceedings of the 2001: IEEE, pp. 125–130, 2001.
2003
Heikman, S., S. Keller, Y. Wu, J. S. Speck, S. P. DenBaars, and U. K. Mishra, "Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures", Journal of applied physics, vol. 93, no. 12: AIP, pp. 10114–10118, 2003.
2004
Rajan, S., P. Waltereit, C. Poblenz, S. J. Heikman, D. S. Green, J. S. Speck, and U. K. Mishra, "Power performance of AlGaN-GaN HEMTs grown on SiC by plasma-assisted MBE", IEEE Electron Device Letters, vol. 25, no. 5: IEEE, pp. 247–249, 2004.
2005
Masui, H., A. Chakraborty, B. A. Haskell, U. K. Mishra, J. S. Speck, S. Nakamura, and S. P. DenBaars, "Polarized light emission from nonpolar InGaN light-emitting diodes grown on a bulk m-plane GaN substrate", Japanese journal of applied physics, vol. 44, no. 10L: IOP Publishing, pp. L1329, 2005.
Chakraborty, A., S. Keller, C. Meier, B. A. Haskell, S. Keller, P. Waltereit, S. P. DenBaars, S. Nakamura, J. S. Speck, and U. K. Mishra, "Properties of nonpolar a-plane InGaN/ GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN", Applied Physics Letters, vol. 86, no. 3: AIP, pp. 031901, 2005.
2007
Poblenz, C., A. L. Corrion, F. Recht, C. Soo Suh, R. Chu, L. Shen, J. S. Speck, and U. K. Mishra, "Power performance of AlGaN/GaN HEMTs grown on SiC by ammonia-MBE at 4 and 10 GHz", IEEE Electron Device Letters, vol. 28, no. 11: IEEE, pp. 945–947, 2007.
2008
Wong, M. Hoi, F. Wu, T. E. Mates, J. S. Speck, and U. K. Mishra, "Polarity inversion of N-face GaN by plasma-assisted molecular beam epitaxy", Journal of Applied Physics, vol. 104, no. 9: AIP, pp. 093710, 2008.
Wong, M. Hoi, Y. Pei, R. Chu, S. Rajan, B. L. Swenson, D. F. Brown, S. Keller, S. P. DenBaars, J. S. Speck, and U. K. Mishra, "Power performance of MBE-grown N-face high electron mobility transistors with AIN back barrier", Device Research Conference, 2008: IEEE, pp. 201–202, 2008.
2010
Hurni, C. A., O. Bierwagen, J. R. Lang, B. M. McSkimming, C. S. Gallinat, E. C. Young, D. A. Browne, U. K. Mishra, and J. S. Speck, "pn junctions on Ga-face GaN grown by NH 3 molecular beam epitaxy with low ideality factors and low reverse currents", Applied Physics Letters, vol. 97, no. 22: AIP, pp. 222113, 2010.
Wong, M. Hoi, F. Wu, J. S. Speck, and U. K. Mishra, "Polarity inversion of N-face GaN using an aluminum oxide interlayer", Journal of Applied Physics, vol. 108, no. 12: AIP, pp. 123710, 2010.
Singisetti, U., M. Hoi Wong, S. Dasgupta, J. S. Speck, and U. K. Mishra, "Proc. Device Research Conf., 2010 Proc. Device Research Conf., 2010 155, 2010", Proc. Device Research Conf, vol. 155, 2010.
Ben-Yaacov, T., T. Ive, C. G. Van de Walle, U. K. Mishra, J. S. Speck, and S. P. DenBaars, "Properties of In-doped ZnO films grown by metalorganic chemical vapor deposition on GaN (0001) templates", Journal of electronic materials, vol. 39, no. 5: Springer US, pp. 608–611, 2010.
Yang, C. Kai, P. Roblin, F. De Groote, S. A. Ringel, S. Rajan, J. Pierre Teyssier, C. Poblenz, Y. Pei, J. Speck, and U. K. Mishra, "Pulsed-IV pulsed-RF cold-FET parasitic extraction of biased AlGaN/GaN HEMTs using large signal network analyzer", IEEE transactions on microwave theory and techniques, vol. 58, no. 5: IEEE, pp. 1077–1088, 2010.
2015
Kaun, S. W., B. Mazumder, M. N. Fireman, E. C. H. Kyle, U. K. Mishra, and J. S. Speck, "Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy", Semiconductor Science and Technology, vol. 30, no. 5: IOP Publishing, pp. 055010, 2015.
2016
Hestroffer, K., C. Lund, H. Li, S. Keller, J. S. Speck, and U. K. Mishra, "Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001) GaN for the optimized synthesis of InGaN compositional grades", physica status solidi (b), vol. 253, no. 4, pp. 626–629, 2016.
Hestroffer, K., C. Lund, H. Li, S. Keller, J. S. Speck, and U. K. Mishra, "Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001) GaN for the optimized synthesis of InGaN compositional grades (Phys. Status Solidi B 4/2016)", physica status solidi (b), vol. 253, no. 4, pp. 792–792, 2016.