Publications

Found 15 results
Author Title Type [ Year(Asc)]
Filters: Author is Mishra, U  [Clear All Filters]
2008
Ive, T., T. Ben-Yaacov, A. Murai, H. Asamizu, CG. Van de Walle, U. Mishra, SP. DenBaars, and JS. Speck, "Metalorganic chemical vapor deposition of ZnO (0001) thin films on GaN (0001) templates and ZnO (0001) substrates", physica status solidi (c), vol. 5, no. 9: Wiley Online Library, pp. 3091–3094, 2008.
Ive, T., T. Ben-Yaacov, H. Asamizu, CG. Van de Walle, U. Mishra, SP. DenBaars, and JS. Speck, "Properties of ZnO (0001) layers grown by metalorganic chemical vapor deposition on GaN (0001) templates", physica status solidi (c), vol. 5, no. 6: Wiley Online Library, pp. 1733–1735, 2008.
2005
Yu, H., L. McCarthy, S. Rajan, S. Keller, S. DenBaars, J. Speck, and U. Mishra, "Ion implanted AlGaN-GaN HEMTs with nonalloyed ohmic contacts", IEEE electron device letters, vol. 26, no. 5: IEEE, pp. 283–285, 2005.
2003
Ambacher, O., M. Eickhoff, A. Link, M. Hermann, M. Stutzmann, F. Bernardini, V. Fiorentini, Y. Smorchkova, J. Speck, U. Mishra, et al., "Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures", physica status solidi (c), no. 6: WILEY-VCH Verlag, pp. 1878–1907, 2003.
Fiorentini, V., Y. Smorchkova, J. Speck, U. Mishra, W. Schaff, V. Tilak, and LF. Eastman, "Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures Part A: Polarization and pyroelectronics", Group III-nitrides and Their Heterostructures: Growth, Characterization and Applications: John Wiley & Sons Inc, pp. 1878, 2003.
Armstrong, A., AR. Arehart, B. Moran, SP. DenBaars, U. Mishra, JS. Speck, and SA. Ringel, "Impact of Growth Pressure on Defects in GaN Grown", Proceedings of the IEEE... International Symposium on Compound Semiconductors, vol. 30: IEEE, pp. 42, 2003.
2002
Shokhovets, S., R. Goldhahn, G. Gobsch, O. Ambacher, IP. Smorchkova, JS. Speck, U. Mishra, A. Link, M. Hermann, and M. Eickhoff, "Electroreflectance and Photoreflectance Studies of Electric Fields in Pt/GaN Schottky Diodes and AlGaN/GaN Heterostructures", MRS Online Proceedings Library Archive, vol. 743: Cambridge University Press, 2002.
Link, A., T. Graf, O. Ambacher, A. Jimenez, E. Calleja, Y. Smorchkova, J. Speck, U. Mishra, and M. Stutzmann, "Transport properties of 2DEGs in AlGaN/GaN heterostructures: Spin splitting and occupation of higher subbands", physica status solidi (b), vol. 234, no. 3: WILEY-VCH Verlag Berlin, pp. 805–809, 2002.
2001
Link, A., T. Graf, R. Dimitrov, O. Ambacher, M. Stutzmann, Y. Smorchkova, U. Mishra, and J. Speck, "Papers presented at the Fourth International Conference on Nitride Semiconductors (ICNS-4) Denver, Colorado, USA, July 16-20, 2001 (Part B. 2)-Two-dimensional electron gas properties-Transport", Physica Status Solidi-B-Basic Research, vol. 228, no. 2: Berlin: Akademie-Verlag, 1971-, pp. 603–606, 2001.
Link, A., T. Graf, R. Dimitrov, O. Ambacher, M. Stutzmann, Y. Smorchkova, U. Mishra, and J. Speck, "Transport Properties of Two-Dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarisation in AlGaN/GaN Heterostructures", physica status solidi (b), vol. 228, no. 2: WILEY-VCH Verlag Berlin GmbH Berlin, pp. 603–606, 2001.
2000
McCarthy, L., Y. Smorchkova, P. Fini, H. Xing, M. Rodwell, J. Speck, S. DenBaars, and U. Mishra, "HBT on LEO GaN", Device Research Conference, 2000. Conference Digest. 58th DRC: IEEE, pp. 85–86, 2000.
Heying, B., I. Smorchkova, C. Poblenz, C. Elsass, P. Fini, D. S Baars, U. Mishra, and JS. Speck, "Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy", Applied Physics Letters, vol. 77, no. 18: AIP, pp. 2885–2887, 2000.
1999
Heying, B., I. Smorchkova, C. Elsass, E. Haus, P. Fini, T. Mates, SP. DenBaars, U. Mishra, and JS. Speck, "Optimization of high quality GaN by MBE", Journal of Electronic Materials, vol. 28, no. 7: The Metals, Minerals, and Materials Society, pp. 1065, 1999.
1998
Chavarkar, PM., L. Zhao, S. Keller, KA. Black, E. Hu, J. Speck, and U. Mishra, "Lattice Engineering Using Lateral Oxidation of Alas: an Approach to Generate Substrates With New Lattice Constants", MRS Online Proceedings Library Archive, vol. 535: Cambridge University Press, 1998.
Hansen, PJ., YE. Strausser, AN. Erickson, EJ. Tarsa, P. Kozodoy, EG. Brazel, JP. Ibbetson, U. Mishra, V. Narayanamurti, SP. DenBaars, et al., "Scanning capacitance microscopy imaging of threading dislocations in GaN films grown on (0001) sapphire by metalorganic chemical vapor deposition", Applied physics letters, vol. 72, no. 18: AIP, pp. 2247–2249, 1998.