Publications

Found 2 results
Author Title Type [ Year(Desc)]
Filters: Author is Rajan, S and First Letter Of Title is E  [Clear All Filters]
2004
Poblenz, C., P. Waltereit, S. Rajan, S. Heikman, UK. Mishra, and JS. Speck, "Effect of carbon doping on buffer leakage in AlGaN/GaN high electron mobility transistors", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 22, no. 3: AVS, pp. 1145–1149, 2004.
2005
Poblenz, C., P. Waltereit, S. Rajan, UK. Mishra, JS. Speck, P. Chin, I. Smorchkova, and B. Heying, "Effect of AlN nucleation layer growth conditions on buffer leakage in Al Ga N/ Ga N high electron mobility transistors grown by molecular beam epitaxy (MBE)", Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, vol. 23, no. 4: AVS, pp. 1562–1567, 2005.